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Denso, Sonnen, and Supermicro Join GaN Systems Presenting at APEC 2019

Denso, Sonnen, and Supermicro Join GaN Systems Presenting at APEC 2019


News Feb 22, 2019 by Scott McMahan
Gallium Oxide Could Have Lower Cost than SiC, NREL Analysis Reveals

Gallium Oxide Could Have Lower Cost than SiC, NREL Analysis Reveals


News Feb 21, 2019 by Paul Shepard
Switching Performance of 750A/3300V Dual SiC-Modules

Switching Performance of 750A/3300V Dual SiC-Modules

This article focuses on the switching behavior of SiC devices and compares Full SiC and Hybrid SiC with the behavior of a silicon device.


3.0kW Single-Phase Inverter GaN Evaluation Platform

3.0kW Single-Phase Inverter GaN Evaluation Platform

SiC-Based Power Unit and High Power Density Electric Machine for HEVs

SiC-Based Power Unit and High Power Density Electric Machine for HEVs


News Feb 13, 2019 by Paul Shepard
STMicroelectronics to Acquire Majority Stake in Silicon Carbide Wafer Manufacturer Norstel AB

STMicroelectronics to Acquire Majority Stake in Silicon Carbide Wafer Manufacturer Norstel AB

STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, today announced it has signed…


Maximizing Performance with SiC Discretes

Maximizing Performance with SiC Discretes

UnitedSiC has recently expanded its SiC FET product offerings to encompass devices with tailored switching speeds


PowerSphyr and GaN Systems Partner on GaN-based Wireless Power

PowerSphyr and GaN Systems Partner on GaN-based Wireless Power


News Feb 12, 2019 by Scott McMahan
JEDEC Publishes RDS(on) Test Guidelines for GaN HEMT-Based Devices

JEDEC Publishes RDS(on) Test Guidelines for GaN HEMT-Based Devices


News Feb 11, 2019 by Scott McMahan
6A to 20A, 650V AEC-Q101 SiC Schottky Diodes

6A to 20A, 650V AEC-Q101 SiC Schottky Diodes

Leading the Way in the GaN Power Semiconductors Industry in 2019

Leading the Way in the GaN Power Semiconductors Industry in 2019


News Feb 08, 2019 by Paul Shepard
40Vds GaN FETs in 20-Amp Half-Bridge Development Board

40Vds GaN FETs in 20-Amp Half-Bridge Development Board

ECPE Announces the Final Program for SiC and GaN User Forum Potential of Wide Bandgap Semiconductors in Power Electronic Applications

ECPE Announces the Final Program for SiC and GaN User Forum Potential of Wide Bandgap Semiconductors in Power Electronic Applications

ECPE is pleased to present the final program for the ECPE Workshop 'SiC & GaN User Forum: Potential of Wide Bandgap Semiconductors in…


new products Feb 07, 2019 by ECPE
IWIPP 2019 to Address Wide Bandgap Semiconductor Power Packaging Challenges

IWIPP 2019 to Address Wide Bandgap Semiconductor Power Packaging Challenges

The International Workshop on Integrated Power Packaging announces IWIPP 2019, to be held in Toulouse, France, April 24-26, 2019.


new products Feb 06, 2019 by IWIPP
UnitedSiC to Reveal Expanded Market Portfolio at APEC 2019

UnitedSiC to Reveal Expanded Market Portfolio at APEC 2019

UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, will be focusing on new, innovative and efficient product offerings at…


2500W Full-Bridge Totem-Pole PFC Demo Board using GaN Power Switches

2500W Full-Bridge Totem-Pole PFC Demo Board using GaN Power Switches

SiC Power MOSFET Gate Drive Evaluation Platform

SiC Power MOSFET Gate Drive Evaluation Platform

Digi-Key to Distribute Navitas 650V 5mm x 6mm GaN Power ICs

Digi-Key to Distribute Navitas 650V 5mm x 6mm GaN Power ICs


News Feb 01, 2019 by Scott McMahan
650V GaN FET Quality and Reliability Data Released by Transphorm

650V GaN FET Quality and Reliability Data Released by Transphorm


News Feb 01, 2019 by Paul Shepard
PSMA-Sponsored APEC 2019 Sessions Address Wide Bandgap Power Conversion Technology

PSMA-Sponsored APEC 2019 Sessions Address Wide Bandgap Power Conversion Technology


News Jan 31, 2019 by Scott McMahan