EEPower

Latest Wide Bandgap Articles

Categories

IWIPP 2019 to Address Wide Bandgap Semiconductor Power Packaging Challenges

IWIPP 2019 to Address Wide Bandgap Semiconductor Power Packaging Challenges

The International Workshop on Integrated Power Packaging announces IWIPP 2019, to be held in Toulouse, France, April 24-26, 2019.


new products Feb 06, 2019 by IWIPP
UnitedSiC to Reveal Expanded Market Portfolio at APEC 2019

UnitedSiC to Reveal Expanded Market Portfolio at APEC 2019

UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, will be focusing on new, innovative and efficient product offerings at…


2500W Full-Bridge Totem-Pole PFC Demo Board using GaN Power Switches

2500W Full-Bridge Totem-Pole PFC Demo Board using GaN Power Switches

SiC Power MOSFET Gate Drive Evaluation Platform

SiC Power MOSFET Gate Drive Evaluation Platform

Digi-Key to Distribute Navitas 650V 5mm x 6mm GaN Power ICs

Digi-Key to Distribute Navitas 650V 5mm x 6mm GaN Power ICs


News Feb 01, 2019 by Scott McMahan
650V GaN FET Quality and Reliability Data Released by Transphorm

650V GaN FET Quality and Reliability Data Released by Transphorm


News Feb 01, 2019 by Paul Shepard
PSMA-Sponsored APEC 2019 Sessions Address Wide Bandgap Power Conversion Technology

PSMA-Sponsored APEC 2019 Sessions Address Wide Bandgap Power Conversion Technology


News Jan 31, 2019 by Scott McMahan
1200V/6mΩ SiC MOSFETs in Power Modules for UPS and Energy Storage Systems

1200V/6mΩ SiC MOSFETs in Power Modules for UPS and Energy Storage Systems

II-VI Supplying 200mm SiC Substrates for EU Horizon 2020 REACTION Program

II-VI Supplying 200mm SiC Substrates for EU Horizon 2020 REACTION Program


News Jan 29, 2019 by Scott McMahan
SiC-based 60kW Interleaved Boost Converter Reference Design

SiC-based 60kW Interleaved Boost Converter Reference Design

GaN-on-Si 10W Fully-matched, Two-stage PA Features 40% Efficiency

GaN-on-Si 10W Fully-matched, Two-stage PA Features 40% Efficiency

80Vds to 100Vds GaN FETs Gain AEC-Q101 Qualification

80Vds to 100Vds GaN FETs Gain AEC-Q101 Qualification

Hermetic 1200V SiC Power FETs

Hermetic 1200V SiC Power FETs

Interatomic Light Rectification in GaAs Generates Current at THz Frequencies

Interatomic Light Rectification in GaAs Generates Current at THz Frequencies


News Jan 16, 2019 by Scott McMahan
GaN Enables 504W Power Supply Module to be 28 Percent Smaller

GaN Enables 504W Power Supply Module to be 28 Percent Smaller


News Jan 16, 2019 by Scott McMahan
Researchers Develop Method for Finding SiC Transistor Defects

Researchers Develop Method for Finding SiC Transistor Defects


News Jan 15, 2019 by Scott McMahan
Wolfspeed Introduces Next-Gen SiC Diode for Renewable Energy Electric Vehicle Applications

Wolfspeed Introduces Next-Gen SiC Diode for Renewable Energy Electric Vehicle Applications

Wolfspeed, A Cree Company, has introduced the 5th generation (C5D) 1700V SiC Schottky diode that features essentially no switching losses and the…


new products Jan 15, 2019 by Wolfspeed
Making GaN Power Electronics Universal

Making GaN Power Electronics Universal

This article focuses on how GaNPower International Inc. is able to make GaN easier to use and more universal.


AI and Digitally-Controlled Ultra-Wideband GaN RF Amplifier for Mobile Base Stations

AI and Digitally-Controlled Ultra-Wideband GaN RF Amplifier for Mobile Base Stations


News Jan 10, 2019 by Scott McMahan
Cree and STMicroelectronics Announce MultiYear Silicon Carbide Wafer Supply Agreement

Cree and STMicroelectronics Announce MultiYear Silicon Carbide Wafer Supply Agreement

Cree, Inc. recently announced that it signed a multi-year agreement to produce and supply its Wolfspeed® silicon carbide (SiC) wafers to…


new products Jan 09, 2019 by Cree