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Maximizing Performance with SiC Discretes

Maximizing Performance with SiC Discretes

UnitedSiC has recently expanded its SiC FET product offerings to encompass devices with tailored switching speeds


PowerSphyr and GaN Systems Partner on GaN-based Wireless Power

PowerSphyr and GaN Systems Partner on GaN-based Wireless Power


News Feb 12, 2019 by Scott McMahan
JEDEC Publishes RDS(on) Test Guidelines for GaN HEMT-Based Devices

JEDEC Publishes RDS(on) Test Guidelines for GaN HEMT-Based Devices


News Feb 11, 2019 by Scott McMahan
6A to 20A, 650V AEC-Q101 SiC Schottky Diodes

6A to 20A, 650V AEC-Q101 SiC Schottky Diodes

Leading the Way in the GaN Power Semiconductors Industry in 2019

Leading the Way in the GaN Power Semiconductors Industry in 2019


News Feb 08, 2019 by Paul Shepard
40Vds GaN FETs in 20-Amp Half-Bridge Development Board

40Vds GaN FETs in 20-Amp Half-Bridge Development Board

ECPE Announces the Final Program for SiC and GaN User Forum Potential of Wide Bandgap Semiconductors in Power Electronic Applications

ECPE Announces the Final Program for SiC and GaN User Forum Potential of Wide Bandgap Semiconductors in Power Electronic Applications

ECPE is pleased to present the final program for the ECPE Workshop 'SiC & GaN User Forum: Potential of Wide Bandgap Semiconductors in…


new products Feb 07, 2019 by ECPE
IWIPP 2019 to Address Wide Bandgap Semiconductor Power Packaging Challenges

IWIPP 2019 to Address Wide Bandgap Semiconductor Power Packaging Challenges

The International Workshop on Integrated Power Packaging announces IWIPP 2019, to be held in Toulouse, France, April 24-26, 2019.


new products Feb 06, 2019 by IWIPP
UnitedSiC to Reveal Expanded Market Portfolio at APEC 2019

UnitedSiC to Reveal Expanded Market Portfolio at APEC 2019

UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, will be focusing on new, innovative and efficient product offerings at…


2500W Full-Bridge Totem-Pole PFC Demo Board using GaN Power Switches

2500W Full-Bridge Totem-Pole PFC Demo Board using GaN Power Switches

SiC Power MOSFET Gate Drive Evaluation Platform

SiC Power MOSFET Gate Drive Evaluation Platform

Digi-Key to Distribute Navitas 650V 5mm x 6mm GaN Power ICs

Digi-Key to Distribute Navitas 650V 5mm x 6mm GaN Power ICs


News Feb 01, 2019 by Scott McMahan
650V GaN FET Quality and Reliability Data Released by Transphorm

650V GaN FET Quality and Reliability Data Released by Transphorm


News Feb 01, 2019 by Paul Shepard
PSMA-Sponsored APEC 2019 Sessions Address Wide Bandgap Power Conversion Technology

PSMA-Sponsored APEC 2019 Sessions Address Wide Bandgap Power Conversion Technology


News Jan 31, 2019 by Scott McMahan
1200V/6mΩ SiC MOSFETs in Power Modules for UPS and Energy Storage Systems

1200V/6mΩ SiC MOSFETs in Power Modules for UPS and Energy Storage Systems

II-VI Supplying 200mm SiC Substrates for EU Horizon 2020 REACTION Program

II-VI Supplying 200mm SiC Substrates for EU Horizon 2020 REACTION Program


News Jan 29, 2019 by Scott McMahan
SiC-based 60kW Interleaved Boost Converter Reference Design

SiC-based 60kW Interleaved Boost Converter Reference Design

GaN-on-Si 10W Fully-matched, Two-stage PA Features 40% Efficiency

GaN-on-Si 10W Fully-matched, Two-stage PA Features 40% Efficiency

80Vds to 100Vds GaN FETs Gain AEC-Q101 Qualification

80Vds to 100Vds GaN FETs Gain AEC-Q101 Qualification

Hermetic 1200V SiC Power FETs

Hermetic 1200V SiC Power FETs