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IGSS GaN and SilTerra Demonstrate Powerful New Technology to Unlock US12 Billion Semiconductor Opportunity

IGSS GaN and SilTerra Demonstrate Powerful New Technology to Unlock US12 Billion Semiconductor Opportunity

IGSS GaN (IGaN) and SilTerra Malaysia Sdn. Bhd. are pleased to announce the impressive results of their recent technology transfer partnership,…

new products Jan 09, 2019 by IGSS GaN
GaN-Based Conduction Cooled AC-DCs Pack 504W in 4” x 2.4” Footprint

GaN-Based Conduction Cooled AC-DCs Pack 504W in 4” x 2.4” Footprint

new products Jan 08, 2019 by Paul Shepard
Cree Agrees to Supply STMicroelectronics with SiC Wafers

Cree Agrees to Supply STMicroelectronics with SiC Wafers

News Jan 08, 2019 by Scott McMahan
GaN Enables Efficient and Compact Capacitive-Coupled Power Conversion

GaN Enables Efficient and Compact Capacitive-Coupled Power Conversion

News Jan 07, 2019 by Paul Shepard
Osram and GaN Systems Develop Ultrafast and High-Power Laser Driver for LiDAR

Osram and GaN Systems Develop Ultrafast and High-Power Laser Driver for LiDAR

News Jan 03, 2019 by Paul Shepard
Osram and GaN Systems Introduce Ultrafast Laser Driver with High-Power Multi-Channel for LiDAR

Osram and GaN Systems Introduce Ultrafast Laser Driver with High-Power Multi-Channel for LiDAR

Osram Opto Semiconductors announced an ultrafast laser driver with a high-power, multi-channel Surface Mount (SMT) laser for LiDAR (light detection…

new products Jan 03, 2019 by Osram Opto Semiconductor
Power Control at 27 MHz with Variable Reactance

Power Control at 27 MHz with Variable Reactance

This is the second of a three part series. In Part 1, we described a quasi-class E circuit providing variable power into inductive and resistive loads

Technical Articles Dec 28, 2018 by David Pacholok
Sanan IC Announces Commercial Release of 6-Inch SiC Wafer Foundry Process

Sanan IC Announces Commercial Release of 6-Inch SiC Wafer Foundry Process

News Dec 21, 2018 by Paul Shepard
Driving SiC MOSFETs with a HighSpeed Gate Driver IC

Driving SiC MOSFETs with a HighSpeed Gate Driver IC

Silicon-Carbide (SiC) MOSFETs that become a visible part of the MOSFET market require special gate drivers that are able to provide a negative…

Technical Articles Dec 21, 2018 by Leonid Neymanand Abdus Sattar
Next-Generation SiC Transistors Claim World’s Lowest On-State Resistance

Next-Generation SiC Transistors Claim World’s Lowest On-State Resistance

new products Dec 20, 2018 by Paul Shepard
GaN FETs Enable Military-Grade High-Frequency Power Supply

GaN FETs Enable Military-Grade High-Frequency Power Supply

new products Dec 18, 2018 by Paul Shepard
GaN Systems Onboard in an Abundance of Innovative Products at CES 2019

GaN Systems Onboard in an Abundance of Innovative Products at CES 2019

GaN Systems invites visitors at the Consumer Electronics Show (CES) to see the latest GaN powered breakthroughs.

new products Dec 17, 2018 by GaN Systems
Carbon-Doping Free GaN-on-Si Displays Better Dynamic R(on)

Carbon-Doping Free GaN-on-Si Displays Better Dynamic R(on)

News Dec 14, 2018 by Paul Shepard
GaN Enables Small & Fast USB Wall-Mount Chargers

GaN Enables Small & Fast USB Wall-Mount Chargers

new products Dec 13, 2018 by Paul Shepard
Transphorm Ships Over a Quarter of a Million GaN Power Devices

Transphorm Ships Over a Quarter of a Million GaN Power Devices

News Dec 13, 2018 by Paul Shepard
GaN-Enabled Wirelessly Powered Systems for the Home and High-Resolution LiDAR

GaN-Enabled Wirelessly Powered Systems for the Home and High-Resolution LiDAR

News Dec 12, 2018 by Paul Shepard
28GHz GaN Front-End Module Targets 5G Rollout

28GHz GaN Front-End Module Targets 5G Rollout

new products Dec 10, 2018 by Paul Shepard
GaN Enables 14mm-Thin 45W Wall Charger

GaN Enables 14mm-Thin 45W Wall Charger

new products Dec 07, 2018 by Paul Shepard
650V D-Mode GaN HEMTs Produced on 200mm Gan-on-Si Wafers with CMOS-Compatible Process

650V D-Mode GaN HEMTs Produced on 200mm Gan-on-Si Wafers with CMOS-Compatible Process

News Dec 06, 2018 by Paul Shepard
New Mechanism for Enhancing Reliability of SiC Power Devices Detailed at IEDM

New Mechanism for Enhancing Reliability of SiC Power Devices Detailed at IEDM

News Dec 06, 2018 by Paul Shepard