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8X Power Density Increase in SiC-Based 100kW Bidirectional DC-DC Converter

8X Power Density Increase in SiC-Based 100kW Bidirectional DC-DC Converter


News Mar 25, 2020 by Paul Shepard
3C+1A World’s Smallest & Lightest 100W GaN Charger

3C+1A World’s Smallest & Lightest 100W GaN Charger

High-Frequency GaN Transistors Achieve Record Efficiency at 100 Volts

High-Frequency GaN Transistors Achieve Record Efficiency at 100 Volts


News Mar 25, 2020 by Paul Shepard
Dual-Channel Gate Driver for Enhancement Mode GaN Transistors

Dual-Channel Gate Driver for Enhancement Mode GaN Transistors

3-Phase 1200V/450A SiC MOSFET Intelligent Power Module for E-mobility

3-Phase 1200V/450A SiC MOSFET Intelligent Power Module for E-mobility

Power Integrations’ SCALE-iDriver for SiC MOSFETs Achieves AEC-Q100 Automotive Qualification

Power Integrations’ SCALE-iDriver for SiC MOSFETs Achieves AEC-Q100 Automotive Qualification

By pairing the SCALE-iDriver control and safety features with its high-speed FluxLink™ communication technology, Power Integrations delivers a…


Transphorm’s GaN Used in HZZH’s 98% Efficient Power Module

Transphorm’s GaN Used in HZZH’s 98% Efficient Power Module

The 3 kW ZHR483KS uses Transphorm’s GaN devices to reach 98 percent efficiency.


new products Mar 21, 2020 by Transphorm
Design Considerations for a GaN-Based High Frequency LLC Resonant Converter

Design Considerations for a GaN-Based High Frequency LLC Resonant Converter

This article discusses the benefits of commercial GaN power transistors in comparison to Si SJMOS and SiC MOS transistors for a soft-switching LLC…


X-FAB Expands its SiC Capacity and Adds In-House Epitaxy Capabilities

X-FAB Expands its SiC Capacity and Adds In-House Epitaxy Capabilities


News Mar 19, 2020 by Paul Shepard
Richardson RFPD Announces Availability of 1200 V, 425 A SiC Switching-Loss Optimized, XM3 Half-Bridge Module from Wolfspeed

Richardson RFPD Announces Availability of 1200 V, 425 A SiC Switching-Loss Optimized, XM3 Half-Bridge Module from Wolfspeed

Richardson RFPD announced the availability and full design support capabilities for a new silicon carbide module from Wolfspeed, a Cree Company.


4-A / 6-A, Isolated Dual-Channel Gate Driver for SiC and Si Power Switches

4-A / 6-A, Isolated Dual-Channel Gate Driver for SiC and Si Power Switches

GaN Chip Enables Smallest 100W and 65W 4-Port Chargers

GaN Chip Enables Smallest 100W and 65W 4-Port Chargers

GTAT and ON Semi Pen 5-Year SiC Supply Agreement

GTAT and ON Semi Pen 5-Year SiC Supply Agreement


News Mar 17, 2020 by Paul Shepard
100kW Inverter with 800V Power Bus and GaN Power Switches – Reference Design

100kW Inverter with 800V Power Bus and GaN Power Switches – Reference Design


News Mar 17, 2020 by Paul Shepard
Transphorm’s GaN Used in HZZH’s 98 Percent Efficient 3kW Power Module

Transphorm’s GaN Used in HZZH’s 98 Percent Efficient 3kW Power Module

Power Integrations’ SCALE-iDriver for SiC MOSFETs Achieves AEC-Q100 Qualification

Power Integrations’ SCALE-iDriver for SiC MOSFETs Achieves AEC-Q100 Qualification

See Developments in SiC, GaN and More at Power Integrations Virtual Booth - APEC 2020

See Developments in SiC, GaN and More at Power Integrations Virtual Booth - APEC 2020


News Mar 17, 2020 by Paul Shepard
Room-Temperature Bonded Interface Improves Cooling of GaN Devices

Room-Temperature Bonded Interface Improves Cooling of GaN Devices


News Mar 16, 2020 by Paul Shepard
Microchip Expands Silicon Carbide (SiC) Family of Power Electronics to Provide System Level Improvements in Efficiency, Size and Reliability

Microchip Expands Silicon Carbide (SiC) Family of Power Electronics to Provide System Level Improvements in Efficiency, Size and Reliability

Microchip introduces SiC SBD Modules that utilizes Microchip's newest generation of SiC die.


AI-Powered Architecture Unleashes Future Silicon IGBT and SiC Improvements

AI-Powered Architecture Unleashes Future Silicon IGBT and SiC Improvements

This article discusses Pre-Switch's solution for the elimination of switching losses by incorporating AI into the Auxiliary Resonant…