EEPower

Latest Wide Bandgap Articles

Categories

X-FAB Expands its SiC Capacity and Adds In-House Epitaxy Capabilities

X-FAB Expands its SiC Capacity and Adds In-House Epitaxy Capabilities


News Mar 19, 2020 by Paul Shepard
Richardson RFPD Announces Availability of 1200 V, 425 A SiC Switching-Loss Optimized, XM3 Half-Bridge Module from Wolfspeed

Richardson RFPD Announces Availability of 1200 V, 425 A SiC Switching-Loss Optimized, XM3 Half-Bridge Module from Wolfspeed

Richardson RFPD announced the availability and full design support capabilities for a new silicon carbide module from Wolfspeed, a Cree Company.


4-A / 6-A, Isolated Dual-Channel Gate Driver for SiC and Si Power Switches

4-A / 6-A, Isolated Dual-Channel Gate Driver for SiC and Si Power Switches

GaN Chip Enables Smallest 100W and 65W 4-Port Chargers

GaN Chip Enables Smallest 100W and 65W 4-Port Chargers

GTAT and ON Semi Pen 5-Year SiC Supply Agreement

GTAT and ON Semi Pen 5-Year SiC Supply Agreement


News Mar 17, 2020 by Paul Shepard
100kW Inverter with 800V Power Bus and GaN Power Switches – Reference Design

100kW Inverter with 800V Power Bus and GaN Power Switches – Reference Design


News Mar 17, 2020 by Paul Shepard
Transphorm’s GaN Used in HZZH’s 98 Percent Efficient 3kW Power Module

Transphorm’s GaN Used in HZZH’s 98 Percent Efficient 3kW Power Module

Power Integrations’ SCALE-iDriver for SiC MOSFETs Achieves AEC-Q100 Qualification

Power Integrations’ SCALE-iDriver for SiC MOSFETs Achieves AEC-Q100 Qualification

See Developments in SiC, GaN and More at Power Integrations Virtual Booth - APEC 2020

See Developments in SiC, GaN and More at Power Integrations Virtual Booth - APEC 2020


News Mar 17, 2020 by Paul Shepard
Room-Temperature Bonded Interface Improves Cooling of GaN Devices

Room-Temperature Bonded Interface Improves Cooling of GaN Devices


News Mar 16, 2020 by Paul Shepard
Microchip Expands Silicon Carbide (SiC) Family of Power Electronics to Provide System Level Improvements in Efficiency, Size and Reliability

Microchip Expands Silicon Carbide (SiC) Family of Power Electronics to Provide System Level Improvements in Efficiency, Size and Reliability

Microchip introduces SiC SBD Modules that utilizes Microchip's newest generation of SiC die.


AI-Powered Architecture Unleashes Future Silicon IGBT and SiC Improvements

AI-Powered Architecture Unleashes Future Silicon IGBT and SiC Improvements

This article discusses Pre-Switch's solution for the elimination of switching losses by incorporating AI into the Auxiliary Resonant…


EPC Announces 80V / 12.5A Half-Bridge GaN Power IC and Dev Board

EPC Announces 80V / 12.5A Half-Bridge GaN Power IC and Dev Board

Microchip Adds 700V, 1200V, 1700V SiC Modules Plus 30kW PFC Dev Board

Microchip Adds 700V, 1200V, 1700V SiC Modules Plus 30kW PFC Dev Board

Why are Ultra-Low On-Resistance SiC FETs Hot?

Why are Ultra-Low On-Resistance SiC FETs Hot?

This article discusses UnitedSiC's state of the art low-resistance power semiconductor switches and their characteristics and application…


Power Integrations Adds 750V GaN Transistors to InnoSwitch3 ICs

Power Integrations Adds 750V GaN Transistors to InnoSwitch3 ICs

ON Semiconductor Introduces New 900 V and 1200 V SiC MOSFETs for Demanding Applications

ON Semiconductor Introduces New 900 V and 1200 V SiC MOSFETs for Demanding Applications

ON Semiconductor has expanded its range of wide bandgap (WBG) devices with the introduction of two additional families of silicon carbide (SiC).


new products Mar 11, 2020 by onsemi
ON Semi Adds 900V and 1200V Silicon Carbide FETs for Demanding Applications

ON Semi Adds 900V and 1200V Silicon Carbide FETs for Demanding Applications

 Value Enhancement of Full SiC 3.3kV Power Module

Value Enhancement of Full SiC 3.3kV Power Module

This article focuses on the 2-level inverter and use this topology to exhibit the results


CISSOID Introduces New SiC Mosfet Intelligent Power Module for E-Mobility

CISSOID Introduces New SiC Mosfet Intelligent Power Module for E-Mobility

The IPM technology offers an all-in-one solution including a 3-Phase water-cooled SiC MOSFET module with built-in gate drivers.


new products Mar 09, 2020 by CISSOID