The 3 kW ZHR483KS uses Transphorm’s GaN devices to reach 98 percent efficiency.
The 3 kW ZHR483KS uses Transphorm’s GaN devices to reach 98 percent efficiency.
This article discusses the benefits of commercial GaN power transistors in comparison to Si SJMOS and SiC MOS transistors…
This article discusses the benefits of commercial GaN power transistors in comparison to Si SJMOS and SiC MOS transistors for a soft-switching LLC…
Richardson RFPD announced the availability and full design support capabilities for a new silicon carbide module from…
Richardson RFPD announced the availability and full design support capabilities for a new silicon carbide module from Wolfspeed, a Cree Company.
Microchip introduces SiC SBD Modules that utilizes Microchip's newest generation of SiC die.
Microchip introduces SiC SBD Modules that utilizes Microchip's newest generation of SiC die.
This article discusses Pre-Switch's solution for the elimination of switching losses by incorporating AI into the…
This article discusses Pre-Switch's solution for the elimination of switching losses by incorporating AI into the Auxiliary Resonant…
This article discusses UnitedSiC's state of the art low-resistance power semiconductor switches and their characteristics…
This article discusses UnitedSiC's state of the art low-resistance power semiconductor switches and their characteristics and application…
ON Semiconductor has expanded its range of wide bandgap (WBG) devices with the introduction of two additional families…
ON Semiconductor has expanded its range of wide bandgap (WBG) devices with the introduction of two additional families of silicon carbide (SiC).