ROHM and LEADRIVE unite to develop next-generation SiC solutions for the electrical vehicle market and to promote world-wide market adoption of SiC…
ROHM and LEADRIVE unite to develop next-generation SiC solutions for the electrical vehicle market and to promote world-wide market adoption of SiC…
This article highlights GaN Systems their strategic partnership with BrightLoop to develop the latest AC/DC and DC/DC…
This article highlights GaN Systems their strategic partnership with BrightLoop to develop the latest AC/DC and DC/DC Converter products for…
This article highlights ON Semiconductor NXH40B120MNQ family of full SiC power modules integrate a 1200 V, 40mΩ SiC…
This article highlights ON Semiconductor NXH40B120MNQ family of full SiC power modules integrate a 1200 V, 40mΩ SiC MOSFET and 1200 V, 40 A SiC…
VisIC Technologies and ZF Friedrichshafen AG partner to utilize innovative gallium nitride technology in the development…
VisIC Technologies and ZF Friedrichshafen AG partner to utilize innovative gallium nitride technology in the development of electric vehicle…
CUI Inc announces the addition of two GaN desktop ac-dc power supply series to its SDI product family designed for a…
CUI Inc announces the addition of two GaN desktop ac-dc power supply series to its SDI product family designed for a wide range of portable…
Mitsubishi Electric has launched a power module in its DIPIPM™ family which incorporates MOSFETs based on SiC material.
Mitsubishi Electric has launched a power module in its DIPIPM™ family which incorporates MOSFETs based on SiC material.
CEA-Leti Researchers Break a world record in LiFi communications using GaN technology.
CEA-Leti Researchers Break a world record in LiFi communications using GaN technology.
Infineon highlights the new EasyPACK™ module with CoolSiC™ automotive MOSFET technology, a 1200 V half-bridge module…
Infineon highlights the new EasyPACK™ module with CoolSiC™ automotive MOSFET technology, a 1200 V half-bridge module with an 8 mΩ/150 A…
This article highlights Infineon EasyPACK™ module with CoolSiC™ automotive MOSFET technology, a 1200 V half-bridge…
This article highlights Infineon EasyPACK™ module with CoolSiC™ automotive MOSFET technology, a 1200 V half-bridge module with an 8 mΩ/150 A…
The Yutong Group partnered with Cree and StarPower to create China’s first electric bus using next-generation silicon…
The Yutong Group partnered with Cree and StarPower to create China’s first electric bus using next-generation silicon carbide technology.
With 3 materials and about 8 types of transistors to select from — although not all combinations are available — the…
With 3 materials and about 8 types of transistors to select from — although not all combinations are available — the choice of the optimum…
Atom Power, a fast-growing startup based in Charlotte, North Carolina, recently closed on a $17.75 million Series B…
Atom Power, a fast-growing startup based in Charlotte, North Carolina, recently closed on a $17.75 million Series B funding round to commercialize…
Nexperia highlights the next-generation, 650-volt gallium nitride (GaN) technology for automotive, 5G, and datacenter…
Nexperia highlights the next-generation, 650-volt gallium nitride (GaN) technology for automotive, 5G, and datacenter applications.
ROHM hightlights its 4th Generation 1200V SiC MOSFETs optimized for automotive powertrain systems, including the main…
ROHM hightlights its 4th Generation 1200V SiC MOSFETs optimized for automotive powertrain systems, including the main drive inverter, as well as…
Vitesco chooses ROHM Semiconductor as its preferred partner for developing silicon carbide powered technology for…
Vitesco chooses ROHM Semiconductor as its preferred partner for developing silicon carbide powered technology for electrical vehicles.
This article discusses the NexGen's Vertical GaN™ eJFET transistors and their principles of operation.
This article discusses the NexGen's Vertical GaN™ eJFET transistors and their principles of operation.
The grant was made by the "Driving the Electric Revolution Challenge" program, part of UKRI’s Industrial Strategy…
The grant was made by the "Driving the Electric Revolution Challenge" program, part of UKRI’s Industrial Strategy Challenge Fund.
Researchers at the University of Buffalo have developed a breakthrough in power electronics, a lateral gallium…
Researchers at the University of Buffalo have developed a breakthrough in power electronics, a lateral gallium oxide-based transistor that can…
In a recent collaboration with the Chalmers University of Technology, SweGaN introduced a 'buffer-free' concept for…
In a recent collaboration with the Chalmers University of Technology, SweGaN introduced a 'buffer-free' concept for GaN-on-SiC electron…
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