EEPower

Latest Wide Bandgap Articles

Categories

0.9mm-square 100V GaN FET for Wireless Charging

0.9mm-square 100V GaN FET for Wireless Charging

Transistor Arrays with DMOS FET Source-Output Driver

Transistor Arrays with DMOS FET Source-Output Driver

SDK to Offer Low Defect SiC Wafers

SDK to Offer Low Defect SiC Wafers


News Oct 04, 2015 by Jeff Shepard
High Heat Encapsulation for SiC and GaN Power Devices

High Heat Encapsulation for SiC and GaN Power Devices

1.7kV SiC FET for Inverter Auxiliary Power Supplies

1.7kV SiC FET for Inverter Auxiliary Power Supplies

Around the World in 80 Days with GaN Systems

Around the World in 80 Days with GaN Systems

Phileas Fogg, in the classic Jules Verne tale “Around the World in 80 Days”, has an argument in a London club over an 1872 newspaper article which


tech insights Oct 02, 2015 by Jim Witham
GaN Diodes handle High Currents with a Low Turn-on Voltage

GaN Diodes handle High Currents with a Low Turn-on Voltage


News Sep 30, 2015 by Jeff Shepard
Handbook for Using GaN in DC-DC Conversion

Handbook for Using GaN in DC-DC Conversion


News Sep 16, 2015 by Jeff Shepard
650V  100A GaN Transistors now Sampling

650V 100A GaN Transistors now Sampling

Dual Enhancement-Mode 120V, 60mOhm GaN FETs

Dual Enhancement-Mode 120V, 60mOhm GaN FETs

Over One Million GaN-on-Si Devices in the Field

Over One Million GaN-on-Si Devices in the Field


News Sep 08, 2015 by Jeff Shepard
SiC Enhances UPS Efficiency, Performance and Reliability

SiC Enhances UPS Efficiency, Performance and Reliability

GaN-on-SiC Devices Chart Path to 5G Cellular Infrastructure

GaN-on-SiC Devices Chart Path to 5G Cellular Infrastructure

Paralleling SiC Cascodes for High Performance High Power Systems

Paralleling SiC Cascodes for High Performance High Power Systems

This article discusses the inherent capability and behaviour of SiC cascodes to be safely paralleled for high performance, high power systems.


Advances in SiC MOSFET Technology Drive Down Cost of HighBay and Outdoor Lighting Fixtures

Advances in SiC MOSFET Technology Drive Down Cost of HighBay and Outdoor Lighting Fixtures

This article discusses how single-stage topologies deliver LED driver solutions with acceptable performance at a lower cost than two-stage topologies.


Qorvo Set to Double GaN Capacity

Qorvo Set to Double GaN Capacity


News Aug 27, 2015 by Jeff Shepard
Designing with GaN and SiC Power Devices

Designing with GaN and SiC Power Devices


News Aug 26, 2015 by Jeff Shepard
All-SiC 300-A 1.2-kV Half-Bridge Module

All-SiC 300-A 1.2-kV Half-Bridge Module

GaN Nanoelectronics-Transistor Blocking Voltage Exceeds 1kV

GaN Nanoelectronics-Transistor Blocking Voltage Exceeds 1kV


News Aug 24, 2015 by Jeff Shepard
Epistar obtains ALLOS GaN-on-Si epi Technology

Epistar obtains ALLOS GaN-on-Si epi Technology


News Aug 19, 2015 by Jeff Shepard