News

Over One Million GaN-on-Si Devices in the Field

September 08, 2015 by Jeff Shepard

M/A-COM Technology Solutions Inc. (MACOM) announced that it has shipped more than one million GaN-on-Si RF power devices to date to customers for use in communications, military and other RF applications. This milestone in the market adoption of this high performance technology comes as GaN-on-Si is finding new potential markets in applications such as magnetron replacements, automotive ignition systems, high bay lighting and wireless charging.

MACOM’s GaN-on-Si is a unique and proprietary RF semiconductor process that brings together the best features of Gallium Arsenide, GaN-on-Silicon Carbide, and LDMOS in a low cost and scalable manufacturing flow. This milestone demonstrates clear field-proven reliability and ruggedness in demanding applications such as aerospace and defense and civil and commercial communications.

“MACOM’s GaN IP portfolio and strategic licensing agreements have set the foundation for a sustainable, cost-efficient technology we believe can enable GaN production at unprecedented economies of scale,” said Michael Ziehl, VP of Marketing, RF & Microwave, MACOM. “Building on this milestone, we expect to see ramping commercial adoption of our GaN technology in other RF applications in the future, including 4G/LTE base stations and RF Energy applications.”