Norstel and Ascatron join forces in SiC Epitaxy

October 05, 2015 by Jeff Shepard

Ascatron AB and Norstel AB have entered into a cooperation agreement to jointly address the market for SiC epitaxy. Both Norstel and Ascatron are already providing SiC epitaxy to the power electronic industry, but by utilizing and sharing their respective expertise, equipment and capabilities, the two companies expect to leverage their businesses. Another reason for the cooperation is new sharpened demand for high performance epitaxy in terms of layer thickness, advanced structures and higher quality, all driven by semiconductor device manufacturers targeting higher voltages, new device types and generally better yield in device fabrication.

While Norstel’s core offering being SiC crystal growth and high quality SiC wafers including epitaxy for volume production, Ascatron specialty is customized SiC epitaxy and device design. “By combining the proven epitaxy production capacity of Norstel with our experience of advanced material we will be able to serve all type of SiC epitaxy needs. From serial production of low defect epi for Schottky’s and MOSFET’s, to R&D prototyping of thick epi with our unique buffer technology for future bipolar devices like IGBT’s”, says Christian Vieider, CEO of Ascatron.

Also Per Zellman, acting CEO of Norstel, underlines the strengths of a complete offering and adds that “We see the cooperation with Ascatron as a natural step to further utilize our capabilities in SiC epitaxy and to increase our market reach. The companies have complementary capabilities and we are already cooperating successfully in projects like the EU project SPEED for new generations of high-power semiconductor devices.”

The new joint-development effort is presently able to provide SiC epitaxial layers with both n- and p-doping up to 250mm thickness on wafers with diameters up to 100 mm. Also 150mm wafers will be supported in the near future.