Dual Enhancement-Mode 120V, 60mOhm GaN FETs
Efficient Power Conversion Corporation introduces the EPC2110 as the newest member of EPC's family of enhancement-mode gallium nitride integrated circuits. The EPC2110 dual enhancement-mode gallium nitride power integrated circuit delivers ultra high frequency switching for exceptional performance in wireless power transfer Class-E amplifier applications.
The EPC2110 is a dual (common-source) eGaN FET configuration in a tiny 1.35 mm x 1.35 mm, 120-VDS, 20-A device with a maximum RDS(on) of 60 milliohms with 5-V applied to the gate. This GaN integrated circuit delivers high performance due to its ultra high switching frequency, extremely low RDS(on), exceptionally low QG and in a very small package.
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2110 is much smaller and has many times superior switching performance. Circuit applications that benefit from this eGaN IC’s performance include ultra high frequency dc-dc conversion, synchronous rectification, class-D audio amplifiers, and most notably, wireless power transfer. In 1k piece quantities, the EPC2110 is priced at $1.06 and is immediately available through Digi-Key Corporation.
