650V 100A GaN Transistors now Sampling

GaN Systems Inc. has announced the GS66540C 650V 100A high current GaN power transistor. GaN Systems' new GS66540C high current power transistor is based on proprietary Island Technology® and belongs to its 650V family of high density devices that achieve extremely efficient power conversion with fast switching speeds of less than 100V/nS and ultra-low thermal losses. The GS66540C is supplied in an evolved form of GaNPX™ packaging specially developed for higher operating currents, providing lower inductance and greater surface mount mechanical robustness required by power modules for the industrial and automotive markets.

The near-chipscale parts have no wirebonds and offer step-change improvements in switching and conduction performance over traditional silicon MOSFETs and IGBTs. Parts are now sampling with major customers, including OEMs and Tier 1 manufacturers, and are being designed in to solar, industrial and automotive applications as global manufacturers race to use the power of GaN to secure competitive advantage.

The GS66540C is an expansion of the company’s portfolio of GaN E-HEMT power devices with current ratings from 7A to 250A, in both 650V and 100V ranges. GaN Systems’ Island Technology® die design, combined with the extremely low inductance and thermal efficiency of GaNPX™ packaging and Drive Assist™ technology, provides their GaN E-HEMTs with 45x improvement in switching and conduction performance over silicon MOSFETs and IGBTs.