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Transistor Delivers 750W CW for 915MHz Applications

Transistor Delivers 750W CW for 915MHz Applications

Hybrid DC Link Capacitor Banks Target SiC and GaN Converters

Hybrid DC Link Capacitor Banks Target SiC and GaN Converters


News Jun 25, 2017 by Jeff Shepard
50 Volt DC-DC Bricks Enable GaN Wireless Power Amplifiers

50 Volt DC-DC Bricks Enable GaN Wireless Power Amplifiers

Artesyn Embedded Technologies today announced three new series of 50-volt dc-dc converter modules


1200V Silicon-Carbide Diodes Deliver Superior Efficiency

1200V Silicon-Carbide Diodes Deliver Superior Efficiency

This article introduces STMicroelectronics' full range of 2A-40A 1200V silicon-carbide (SiC) JBS (Junction Barrier Schottky) diodes


Reliable SiC Power Devices for Automotive Applications

Reliable SiC Power Devices for Automotive Applications

This article focuses on automotive-grade SiC power devices, including some of their common applications and reliability data.


WIN Semi Expands GaN and GaAs Process Offerings

WIN Semi Expands GaN and GaAs Process Offerings


News Jun 14, 2017 by Paul Shepard
200V and 650V Enhancement-Mode GaN Devices on 8” Wafers

200V and 650V Enhancement-Mode GaN Devices on 8” Wafers


News Jun 13, 2017 by Jeff Shepard
First Automotive-Qualified GaN FETs

First Automotive-Qualified GaN FETs

Transphorm Inc. announced that its second generation, JEDEC-qualified high voltage gallium nitride (GaN) technology is now the industry’s first…


new products Jun 13, 2017 by Transphorm
SiC - the High Performance Power Semiconductor

SiC - the High Performance Power Semiconductor

This article discusses the Silicon Carbide Technology with Chris Dries from USCi.


A Performance Comparison of GaN E-HEMTs versus SiC MOSFETs in Power Switching Applications

A Performance Comparison of GaN E-HEMTs versus SiC MOSFETs in Power Switching Applications

This article highlights GaN Systems Inc. comparison of GaN E-HEMTs and SiC MOSFET performance and characteristics in power switching applications.


GaN Enables 20W/in3 65W AC-DC with Over 94% Efficiency

GaN Enables 20W/in3 65W AC-DC with Over 94% Efficiency


News Jun 06, 2017 by Jeff Shepard
Monolithic GaN Half Bridge Enables 85% Efficient 12V-to-1.8V PoLs

Monolithic GaN Half Bridge Enables 85% Efficient 12V-to-1.8V PoLs

1200V CoolSiC™ MOSFET: High Performance Complemented by High Reliability

1200V CoolSiC™ MOSFET: High Performance Complemented by High Reliability

This article discusses the advantages and benefits of applying Infineon's SiC MOSFETs with blocking voltages of 1200V in various application…


150W GaN-Based AC-DC Reference Design Over 95% Efficient

150W GaN-Based AC-DC Reference Design Over 95% Efficient


News Jun 01, 2017 by Jeff Shepard
Joining Forces in Strategic SiC Collaboration

Joining Forces in Strategic SiC Collaboration

Danfoss Silicon Power is establishing production in the US and entering into a collaboration with industrial giant General Electric (GE)


SiC MOSFETs in Optimized Packaging Deliver a 3× Reduction in Switching Losses, Enabling Affordable High-Efficiency EV Battery Chargers

SiC MOSFETs in Optimized Packaging Deliver a 3× Reduction in Switching Losses, Enabling Affordable High-Efficiency EV Battery Chargers

This article highlights Wolfspeed C3M™ SiC MOSFETs that considers package inductance and printed circuit board layout as factors for best system…


200V GaN Power Transistor is 12x Smaller Than MOSFETs

200V GaN Power Transistor is 12x Smaller Than MOSFETs

GaN + Digital Power in Next-gen Envelope-Tracking LTE PA

GaN + Digital Power in Next-gen Envelope-Tracking LTE PA


News May 24, 2017 by Jeff Shepard
New Contender for the Power Transistor Throne

New Contender for the Power Transistor Throne

This article highlights Panasonic Hybrid Drain Gate Injection Transistor (HD-GiT) with overview of advantages that aimed aimed at power converters.


Isolated Gate Drivers Deliver Solutions for GaN and SiC

Isolated Gate Drivers Deliver Solutions for GaN and SiC