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PCIM Europe – More International and More GaN

PCIM Europe – More International and More GaN

1200V SiC Schottky Diode Platform Launched by Littelfuse

1200V SiC Schottky Diode Platform Launched by Littelfuse

SiC MOSFET Gate Drivers for Automotive and Industrial Designs

SiC MOSFET Gate Drivers for Automotive and Industrial Designs

Rohm Expands its Full SiC Power Module Lineup

Rohm Expands its Full SiC Power Module Lineup

Microsemi and Analog Devices Collaborate on SiC FET Drivers

Microsemi and Analog Devices Collaborate on SiC FET Drivers

All-SiC 1.2kV Power Module for Harsh Environment Operation

All-SiC 1.2kV Power Module for Harsh Environment Operation

Industry’s First All-SiC 12 kV Power Module to Meet Reliability Benchmark for Harsh Environment Operation

Industry’s First All-SiC 12 kV Power Module to Meet Reliability Benchmark for Harsh Environment Operation

Wolfspeed releases the industry’s first power module that passes the harsh environment qualification test for simultaneous high-humidity,…


new products May 16, 2017 by Wolfspeed
Exagan Bringing the GaN-on-Si Revolution to PCIM

Exagan Bringing the GaN-on-Si Revolution to PCIM

Full-SiC 1.2kV Module Production Starts at Infineon

Full-SiC 1.2kV Module Production Starts at Infineon

Integrated 600V GaN Half-Bridge for E-Mobility

Integrated 600V GaN Half-Bridge for E-Mobility

Titanium 3kW Front End uses 49 milliOhm GaN FETs

Titanium 3kW Front End uses 49 milliOhm GaN FETs

Tipping Point for Wide Band Gap Technology Signals Start of Mainstream SiC Adoption

Tipping Point for Wide Band Gap Technology Signals Start of Mainstream SiC Adoption

The past few years have been notable for the increased rate of investment in developing alternative semiconductor materials such as silicon carbide…


DuPont and SBE Collaborate on High-Temp Caps for SiC Designs

DuPont and SBE Collaborate on High-Temp Caps for SiC Designs


News May 10, 2017 by Jeff Shepard
GaN 3kW Bridgeless-Totem-Pole PFC Achieves 99% Efficiency

GaN 3kW Bridgeless-Totem-Pole PFC Achieves 99% Efficiency


News May 10, 2017 by Jeff Shepard
X-FAB and Exagan Fab GaN-on-Si Devices on 200-mm Wafers

X-FAB and Exagan Fab GaN-on-Si Devices on 200-mm Wafers


News May 09, 2017 by Jeff Shepard
1200V SiC Diodes Deliver Superior Efficiency and Robustness

1200V SiC Diodes Deliver Superior Efficiency and Robustness

GaN Power IC Experts to Present at PCIM Europe 2017

GaN Power IC Experts to Present at PCIM Europe 2017

DC-DC Converters Optimized to Power IGBT & SiC Drivers

DC-DC Converters Optimized to Power IGBT & SiC Drivers

Transphorm Bringing the GaN Revolution to Nuremberg

Transphorm Bringing the GaN Revolution to Nuremberg

Wolfspeed Auxiliary Power Supply Evaluation Board for SiC MOSFET

Wolfspeed Auxiliary Power Supply Evaluation Board for SiC MOSFET

This article features the full design support capabilities for a new evaluation board utilizing Wolfspeed's C2M1000170J for auxiliary power…