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SiC - the High Performance Power Semiconductor

SiC - the High Performance Power Semiconductor

This article discusses the Silicon Carbide Technology with Chris Dries from USCi.


A Performance Comparison of GaN E-HEMTs versus SiC MOSFETs in Power Switching Applications

A Performance Comparison of GaN E-HEMTs versus SiC MOSFETs in Power Switching Applications

This article highlights GaN Systems Inc. comparison of GaN E-HEMTs and SiC MOSFET performance and characteristics in power switching applications.


GaN Enables 20W/in3 65W AC-DC with Over 94% Efficiency

GaN Enables 20W/in3 65W AC-DC with Over 94% Efficiency


News Jun 06, 2017 by Jeff Shepard
Monolithic GaN Half Bridge Enables 85% Efficient 12V-to-1.8V PoLs

Monolithic GaN Half Bridge Enables 85% Efficient 12V-to-1.8V PoLs

1200V CoolSiC™ MOSFET: High Performance Complemented by High Reliability

1200V CoolSiC™ MOSFET: High Performance Complemented by High Reliability

This article discusses the advantages and benefits of applying Infineon's SiC MOSFETs with blocking voltages of 1200V in various application…


150W GaN-Based AC-DC Reference Design Over 95% Efficient

150W GaN-Based AC-DC Reference Design Over 95% Efficient


News Jun 01, 2017 by Jeff Shepard
Joining Forces in Strategic SiC Collaboration

Joining Forces in Strategic SiC Collaboration

Danfoss Silicon Power is establishing production in the US and entering into a collaboration with industrial giant General Electric (GE)


SiC MOSFETs in Optimized Packaging Deliver a 3× Reduction in Switching Losses, Enabling Affordable High-Efficiency EV Battery Chargers

SiC MOSFETs in Optimized Packaging Deliver a 3× Reduction in Switching Losses, Enabling Affordable High-Efficiency EV Battery Chargers

This article highlights Wolfspeed C3M™ SiC MOSFETs that considers package inductance and printed circuit board layout as factors for best system…


200V GaN Power Transistor is 12x Smaller Than MOSFETs

200V GaN Power Transistor is 12x Smaller Than MOSFETs

GaN + Digital Power in Next-gen Envelope-Tracking LTE PA

GaN + Digital Power in Next-gen Envelope-Tracking LTE PA


News May 24, 2017 by Jeff Shepard
New Contender for the Power Transistor Throne

New Contender for the Power Transistor Throne

This article highlights Panasonic Hybrid Drain Gate Injection Transistor (HD-GiT) with overview of advantages that aimed aimed at power converters.


Isolated Gate Drivers Deliver Solutions for GaN and SiC

Isolated Gate Drivers Deliver Solutions for GaN and SiC

PCIM Europe – More International and More GaN

PCIM Europe – More International and More GaN

1200V SiC Schottky Diode Platform Launched by Littelfuse

1200V SiC Schottky Diode Platform Launched by Littelfuse

SiC MOSFET Gate Drivers for Automotive and Industrial Designs

SiC MOSFET Gate Drivers for Automotive and Industrial Designs

Rohm Expands its Full SiC Power Module Lineup

Rohm Expands its Full SiC Power Module Lineup

Microsemi and Analog Devices Collaborate on SiC FET Drivers

Microsemi and Analog Devices Collaborate on SiC FET Drivers

All-SiC 1.2kV Power Module for Harsh Environment Operation

All-SiC 1.2kV Power Module for Harsh Environment Operation

Industry’s First All-SiC 12 kV Power Module to Meet Reliability Benchmark for Harsh Environment Operation

Industry’s First All-SiC 12 kV Power Module to Meet Reliability Benchmark for Harsh Environment Operation

Wolfspeed releases the industry’s first power module that passes the harsh environment qualification test for simultaneous high-humidity,…


new products May 16, 2017 by Wolfspeed
Exagan Bringing the GaN-on-Si Revolution to PCIM

Exagan Bringing the GaN-on-Si Revolution to PCIM