This article discusses the challenges of SiC devices under high humidity conditions and introduces the new WAS300M12BM2…
This article discusses the challenges of SiC devices under high humidity conditions and introduces the new WAS300M12BM2 Wolfspeed power module.
Wolfspeed introduced a new series of 28V GaN HEMT RF power devices capable of higher frequency operation to 8GHz with…
Wolfspeed introduced a new series of 28V GaN HEMT RF power devices capable of higher frequency operation to 8GHz with increased efficiency and…
This article explains in detail the innovation potential and benefits of integrating SiC-technology in power electronics systems.
This article explains in detail the innovation potential and benefits of integrating SiC-technology in power electronics systems.
This article highlights Siltectra's Cold Split, a kerf-free wafering technique, and discusses its advantages over…
This article highlights Siltectra's Cold Split, a kerf-free wafering technique, and discusses its advantages over conventional techniques.
Wolfspeed has extended its family of 50V unmatched GaN HEMT RF power devices.
Wolfspeed has extended its family of 50V unmatched GaN HEMT RF power devices.
Efficient Power Conversion (EPC) Introduces 200 V Gallium Nitride Power Transistor 12 Times Smaller Than Equivalently…
Efficient Power Conversion (EPC) Introduces 200 V Gallium Nitride Power Transistor 12 Times Smaller Than Equivalently Rated MOSFETS EPC2046 GaN…
This article talks about the interview with Gene Sheridan from Navitas Semiconductors on GaN Technology.
This article talks about the interview with Gene Sheridan from Navitas Semiconductors on GaN Technology.
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