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PPM Power Signs Power Modules and SiC Agreement with SanRex

PPM Power Signs Power Modules and SiC Agreement with SanRex


News Sep 30, 2017 by Paul Shepard
Industrial ATX Power with Digital Control, SiC Rectifiers and Remote Monitoring

Industrial ATX Power with Digital Control, SiC Rectifiers and Remote Monitoring

Dr. Hiroyuki Matsunami Wins Honda Prize for Pioneering SiC Research

Dr. Hiroyuki Matsunami Wins Honda Prize for Pioneering SiC Research


News Sep 27, 2017 by Paul Shepard
Sixth-Generation 650V SiC Schottky Diodes have Faster Switching

Sixth-Generation 650V SiC Schottky Diodes have Faster Switching

Mitsubishi Develops SiC Power Device with Record Power Efficiency

Mitsubishi Develops SiC Power Device with Record Power Efficiency


News Sep 21, 2017 by Paul Shepard
GaN FETs enable Reimagining Servos through Redesigned Power Electronics

GaN FETs enable Reimagining Servos through Redesigned Power Electronics


News Sep 20, 2017 by Paul Shepard
GaN Power ICs Enable 5X Smaller and Lighter 65W USB-PD Laptop Adapter

GaN Power ICs Enable 5X Smaller and Lighter 65W USB-PD Laptop Adapter


News Sep 19, 2017 by Paul Shepard
Isolated DC-DCs Optimized for Fast-Switching GaN Drivers

Isolated DC-DCs Optimized for Fast-Switching GaN Drivers

Ascatron enters SiC Power Device Market with Diodes up to 10kV

Ascatron enters SiC Power Device Market with Diodes up to 10kV


News Sep 18, 2017 by Paul Shepard
SiC Devices Poised and Ready for Harsh Environment Applications

SiC Devices Poised and Ready for Harsh Environment Applications

This article discusses the challenges of SiC devices under high humidity conditions and introduces the new WAS300M12BM2 Wolfspeed power module.


SDK to Expand Capacity for High-Grade SiC Epitaxial Wafers

SDK to Expand Capacity for High-Grade SiC Epitaxial Wafers


News Sep 14, 2017 by Paul Shepard
New Process for Making SiC Power Devices Opens Market to More Competition

New Process for Making SiC Power Devices Opens Market to More Competition


News Sep 14, 2017 by Paul Shepard
Next-Generation GaN HEMTs Deliver Unmatched Efficiency

Next-Generation GaN HEMTs Deliver Unmatched Efficiency

Next Generation GaN HEMTs Deliver Unmatched Efficiency

Next Generation GaN HEMTs Deliver Unmatched Efficiency

Wolfspeed introduced a new series of 28V GaN HEMT RF power devices capable of higher frequency operation to 8GHz with increased efficiency and…


new products Sep 12, 2017 by Wolfspeed
1200-Volt SiC Schottkys for High-Temperature Designs

1200-Volt SiC Schottkys for High-Temperature Designs

SiC Power Modules for a Wide Application Range Innovative Power Devices for a Sustainable Future

SiC Power Modules for a Wide Application Range Innovative Power Devices for a Sustainable Future

This article explains in detail the innovation potential and benefits of integrating SiC-technology in power electronics systems.


GaN-based High-Power, Near Field WattUp Charging Solution

GaN-based High-Power, Near Field WattUp Charging Solution


News Sep 07, 2017 by Paul Shepard
COLD SPLIT Provides Significant Cost Advantages for SiC Substrates and Devices

COLD SPLIT Provides Significant Cost Advantages for SiC Substrates and Devices

This article highlights Siltectra's Cold Split, a kerf-free wafering technique, and discusses its advantages over conventional techniques.


Pressureless Sinter Joining for Next-Gen GaN & SiC Power Semis

Pressureless Sinter Joining for Next-Gen GaN & SiC Power Semis


News Sep 01, 2017 by Paul Shepard
ROHM now Offering SiC, IGBTs and Gate Drivers in India

ROHM now Offering SiC, IGBTs and Gate Drivers in India


News Aug 30, 2017 by Paul Shepard