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SiC MOSFETs Enable 80+ Titanium Efficiency in Data Center Power

SiC MOSFETs Enable 80+ Titanium Efficiency in Data Center Power

News Aug 10, 2017 by Paul Shepard
GaN Gives Radar 360 Degree Threat Detection Ability

GaN Gives Radar 360 Degree Threat Detection Ability

News Aug 08, 2017 by Paul Shepard
II-VI Inc. Acquires 6-inch GaN/SiC/InP Wafer Fab in U.K.

II-VI Inc. Acquires 6-inch GaN/SiC/InP Wafer Fab in U.K.

News Aug 07, 2017 by Paul Shepard
RF MLCCs Rated to +200 C Target SiC and GaN Designs

RF MLCCs Rated to +200 C Target SiC and GaN Designs

new products Aug 07, 2017 by Paul Shepard
GaN Power Amplifiers feature Low Noise High Gain

GaN Power Amplifiers feature Low Noise High Gain

new products Aug 07, 2017 by Paul Shepard
Showa Denko Acquires Assets Related to SiC for Power Devices

Showa Denko Acquires Assets Related to SiC for Power Devices

News Aug 06, 2017 by Paul Shepard
Power Transistor Modeler Reduces Time to Market

Power Transistor Modeler Reduces Time to Market

new products Aug 02, 2017 by Paul Shepard
Side Wall Gate - Moving on from Trench

Side Wall Gate - Moving on from Trench

This article discusses the new side wall gate structure and its performance characteristics and its module-level investigation.

Technical Articles Aug 02, 2017 by Neil Markham
Carbon-Doping Not Needed to Achieve High-Isolation GaN-on-Si

Carbon-Doping Not Needed to Achieve High-Isolation GaN-on-Si

News Jul 31, 2017 by Paul Shepard
W-Band GaN Transmitters Enable Longer Range / Higher Bandwidth

W-Band GaN Transmitters Enable Longer Range / Higher Bandwidth

News Jul 24, 2017 by Paul Shepard
Next-Generation SiC Platform for 6-inch Wafers

Next-Generation SiC Platform for 6-inch Wafers

News Jul 20, 2017 by Paul Shepard
BMW i Ventures makes Strategic Investment in GaN Systems

BMW i Ventures makes Strategic Investment in GaN Systems

News Jul 19, 2017 by Paul Shepard
Investigating Losses of GaN-HFETs in a Synchronous Buck Converter

Investigating Losses of GaN-HFETs in a Synchronous Buck Converter

This article illustrates a thermal measuring method and electrical method with air-core inductors to investigate the losses in eGaNTM FETs.

Technical Articles Jul 15, 2017 by Marita Wendt
Creating Many Thin Layers from a Single GaN Wafer

Creating Many Thin Layers from a Single GaN Wafer

News Jul 14, 2017 by Paul Shepard
Ultra-Fast Switching with 1200V SiC Schottky

Ultra-Fast Switching with 1200V SiC Schottky

new products Jul 14, 2017 by Paul Shepard
Growing GaN with Nb2N for Better Cost and Performance

Growing GaN with Nb2N for Better Cost and Performance

News Jul 06, 2017 by Paul Shepard
Picosun’s ALD Technology Gives a Boost to GaN Devices

Picosun’s ALD Technology Gives a Boost to GaN Devices

News Jul 05, 2017 by Paul Shepard
50V GaN-on-SiC Transistors Boost Efficiency and Bandwidth

50V GaN-on-SiC Transistors Boost Efficiency and Bandwidth

new products Jul 04, 2017 by Jeff Shepard
50V DC-DC Bricks Enable GaN Wireless Power Amplifiers

50V DC-DC Bricks Enable GaN Wireless Power Amplifiers

new products Jul 02, 2017 by Paul Shepard
GaN Enables 99% Efficient 2kW Servo Drives and Robotics

GaN Enables 99% Efficient 2kW Servo Drives and Robotics

News Jun 26, 2017 by Jeff Shepard