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250W 50V GaN HEMT with High Efficiency to 3.0GHz

250W 50V GaN HEMT with High Efficiency to 3.0GHz

new products Aug 24, 2017 by Paul Shepard
50V GaN HEMT Family Released with a High Efficiency 30GHz 250W Device

50V GaN HEMT Family Released with a High Efficiency 30GHz 250W Device

Wolfspeed has extended its family of 50V unmatched GaN HEMT RF power devices.

new products Aug 24, 2017 by Wolfspeed
60W Class-E Amplifier Dev Board with 200V GaN FET Enabling High Efficiency Up to 15MHz

60W Class-E Amplifier Dev Board with 200V GaN FET Enabling High Efficiency Up to 15MHz

News Aug 23, 2017 by Paul Shepard
200 V Gallium Nitride Power Transistor

200 V Gallium Nitride Power Transistor

Efficient Power Conversion (EPC) Introduces 200 V Gallium Nitride Power Transistor 12 Times Smaller Than Equivalently Rated MOSFETS EPC2046 GaN…

new products Aug 23, 2017 by EPC
Interview: Navitas on Design Simplicity - GaN Power ICs with iDrive

Interview: Navitas on Design Simplicity - GaN Power ICs with iDrive

This article talks about the interview with Gene Sheridan from Navitas Semiconductors on GaN Technology.

tech insights Aug 21, 2017 by Gene Sheridan
DC-DC Converters for Driving Next-Gen SiC MOSFETs

DC-DC Converters for Driving Next-Gen SiC MOSFETs

new products Aug 17, 2017 by Paul Shepard
Microsemi to Develop 1.7kV and 3.3kV SiC FETS and Diodes for PowerAmerica

Microsemi to Develop 1.7kV and 3.3kV SiC FETS and Diodes for PowerAmerica

News Aug 17, 2017 by Paul Shepard
High-Purity Silicon Carbide Technology Platform for SiC Power Devices

High-Purity Silicon Carbide Technology Platform for SiC Power Devices

News Aug 16, 2017 by Paul Shepard
Electric Power Research Institute Funds GRAPES SiC Project

Electric Power Research Institute Funds GRAPES SiC Project

News Aug 15, 2017 by Paul Shepard
Enhanced LTSpice Model Simplifies Designing with GaN

Enhanced LTSpice Model Simplifies Designing with GaN

News Aug 15, 2017 by Paul Shepard
80 Titanium Efficiency Rating in Next-Generation Telecom and Data Center Applications Enabled by New SiC MOSFET

80 Titanium Efficiency Rating in Next-Generation Telecom and Data Center Applications Enabled by New SiC MOSFET

Wolfspeed, A Cree Company announces that it has advanced the development of high efficiency data center power supplies through the implementation…

new products Aug 11, 2017 by Wolfspeed
Dual-Transistor GaN-on-SiC Amplifier Lowers Telecom Infrastructure Costs

Dual-Transistor GaN-on-SiC Amplifier Lowers Telecom Infrastructure Costs

new products Aug 10, 2017 by Paul Shepard
SiC MOSFETs Enable 80+ Titanium Efficiency in Data Center Power

SiC MOSFETs Enable 80+ Titanium Efficiency in Data Center Power

News Aug 10, 2017 by Paul Shepard
GaN Gives Radar 360 Degree Threat Detection Ability

GaN Gives Radar 360 Degree Threat Detection Ability

News Aug 08, 2017 by Paul Shepard
II-VI Inc. Acquires 6-inch GaN/SiC/InP Wafer Fab in U.K.

II-VI Inc. Acquires 6-inch GaN/SiC/InP Wafer Fab in U.K.

News Aug 07, 2017 by Paul Shepard
RF MLCCs Rated to +200 C Target SiC and GaN Designs

RF MLCCs Rated to +200 C Target SiC and GaN Designs

new products Aug 07, 2017 by Paul Shepard
GaN Power Amplifiers feature Low Noise High Gain

GaN Power Amplifiers feature Low Noise High Gain

new products Aug 07, 2017 by Paul Shepard
Showa Denko Acquires Assets Related to SiC for Power Devices

Showa Denko Acquires Assets Related to SiC for Power Devices

News Aug 06, 2017 by Paul Shepard
Power Transistor Modeler Reduces Time to Market

Power Transistor Modeler Reduces Time to Market

new products Aug 02, 2017 by Paul Shepard
Side Wall Gate - Moving on from Trench

Side Wall Gate - Moving on from Trench

This article discusses the new side wall gate structure and its performance characteristics and its module-level investigation.

Technical Articles Aug 02, 2017 by Neil Markham