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DC-DC Converters for Driving Next-Gen SiC MOSFETs

DC-DC Converters for Driving Next-Gen SiC MOSFETs

new products Aug 17, 2017 by Paul Shepard
Microsemi to Develop 1.7kV and 3.3kV SiC FETS and Diodes for PowerAmerica

Microsemi to Develop 1.7kV and 3.3kV SiC FETS and Diodes for PowerAmerica

News Aug 17, 2017 by Paul Shepard
High-Purity Silicon Carbide Technology Platform for SiC Power Devices

High-Purity Silicon Carbide Technology Platform for SiC Power Devices

News Aug 16, 2017 by Paul Shepard
Electric Power Research Institute Funds GRAPES SiC Project

Electric Power Research Institute Funds GRAPES SiC Project

News Aug 15, 2017 by Paul Shepard
Enhanced LTSpice Model Simplifies Designing with GaN

Enhanced LTSpice Model Simplifies Designing with GaN

News Aug 15, 2017 by Paul Shepard
80 Titanium Efficiency Rating in Next-Generation Telecom and Data Center Applications Enabled by New SiC MOSFET

80 Titanium Efficiency Rating in Next-Generation Telecom and Data Center Applications Enabled by New SiC MOSFET

Wolfspeed, A Cree Company announces that it has advanced the development of high efficiency data center power supplies through the implementation…

new products Aug 11, 2017 by Wolfspeed
Dual-Transistor GaN-on-SiC Amplifier Lowers Telecom Infrastructure Costs

Dual-Transistor GaN-on-SiC Amplifier Lowers Telecom Infrastructure Costs

new products Aug 10, 2017 by Paul Shepard
SiC MOSFETs Enable 80+ Titanium Efficiency in Data Center Power

SiC MOSFETs Enable 80+ Titanium Efficiency in Data Center Power

News Aug 10, 2017 by Paul Shepard
GaN Gives Radar 360 Degree Threat Detection Ability

GaN Gives Radar 360 Degree Threat Detection Ability

News Aug 08, 2017 by Paul Shepard
II-VI Inc. Acquires 6-inch GaN/SiC/InP Wafer Fab in U.K.

II-VI Inc. Acquires 6-inch GaN/SiC/InP Wafer Fab in U.K.

News Aug 07, 2017 by Paul Shepard
RF MLCCs Rated to +200 C Target SiC and GaN Designs

RF MLCCs Rated to +200 C Target SiC and GaN Designs

new products Aug 07, 2017 by Paul Shepard
GaN Power Amplifiers feature Low Noise High Gain

GaN Power Amplifiers feature Low Noise High Gain

new products Aug 07, 2017 by Paul Shepard
Showa Denko Acquires Assets Related to SiC for Power Devices

Showa Denko Acquires Assets Related to SiC for Power Devices

News Aug 06, 2017 by Paul Shepard
Power Transistor Modeler Reduces Time to Market

Power Transistor Modeler Reduces Time to Market

new products Aug 02, 2017 by Paul Shepard
Side Wall Gate - Moving on from Trench

Side Wall Gate - Moving on from Trench

This article discusses the new side wall gate structure and its performance characteristics and its module-level investigation.

Technical Articles Aug 02, 2017 by Neil Markham
Carbon-Doping Not Needed to Achieve High-Isolation GaN-on-Si

Carbon-Doping Not Needed to Achieve High-Isolation GaN-on-Si

News Jul 31, 2017 by Paul Shepard
W-Band GaN Transmitters Enable Longer Range / Higher Bandwidth

W-Band GaN Transmitters Enable Longer Range / Higher Bandwidth

News Jul 24, 2017 by Paul Shepard
Next-Generation SiC Platform for 6-inch Wafers

Next-Generation SiC Platform for 6-inch Wafers

News Jul 20, 2017 by Paul Shepard
BMW i Ventures makes Strategic Investment in GaN Systems

BMW i Ventures makes Strategic Investment in GaN Systems

News Jul 19, 2017 by Paul Shepard
Investigating Losses of GaN-HFETs in a Synchronous Buck Converter

Investigating Losses of GaN-HFETs in a Synchronous Buck Converter

This article illustrates a thermal measuring method and electrical method with air-core inductors to investigate the losses in eGaNTM FETs.

Technical Articles Jul 15, 2017 by Marita Wendt