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PowerBase Pushing for High-Voltage GaN Power Devices

PowerBase Pushing for High-Voltage GaN Power Devices


News May 05, 2018 by Paul Shepard
EPC Announces AEC Q101 Qualification for Two 80V GaN FETs

EPC Announces AEC Q101 Qualification for Two 80V GaN FETs


News May 01, 2018 by Paul Shepard
GaN-based 300V-in, 5A-out Half-Bridge Development Board with Digital Isolation

GaN-based 300V-in, 5A-out Half-Bridge Development Board with Digital Isolation

GaN Power IC Expert to Chair Major Power Sources Association

GaN Power IC Expert to Chair Major Power Sources Association


News Apr 25, 2018 by Paul Shepard
350V GaN Power Transistor is 20-Times Smaller Than Comparable Silicon

350V GaN Power Transistor is 20-Times Smaller Than Comparable Silicon

SiC Enables 98.5% Efficient 6.6-kW Totem-Pole PFC Reference Design

SiC Enables 98.5% Efficient 6.6-kW Totem-Pole PFC Reference Design

Mersen to Acquire 49% of SiC Start-up CALY Technologies

Mersen to Acquire 49% of SiC Start-up CALY Technologies


News Apr 18, 2018 by Paul Shepard
Smart Handling with Surge Current in PFC Using A Silicon Carbide Schottky Diode

Smart Handling with Surge Current in PFC Using A Silicon Carbide Schottky Diode

This article highlights Infineon CoolSiC™ G6 diode as the new sixth generation of SiC Schottky diodes that reduced conduction losses and surge…


50-Amp High-Voltage Vertical GaN Power Semiconductors

50-Amp High-Voltage Vertical GaN Power Semiconductors

NuCurrent Partners with GaN Systems to Develop 150W Wireless Charging

NuCurrent Partners with GaN Systems to Develop 150W Wireless Charging


News Apr 12, 2018 by Paul Shepard
High-Voltage GaAs Power Diode Production begins in Dresden

High-Voltage GaAs Power Diode Production begins in Dresden


News Apr 11, 2018 by Paul Shepard
Practical Solutions Design with GaN Power Transistors

Practical Solutions Design with GaN Power Transistors

This article discusses the advantages of Gallium Nitride over Silicon Carbide in terms of performance and application.


imec and Qromis Fab p-GaN HEMTs on 200mm CTE-matched Substrates

imec and Qromis Fab p-GaN HEMTs on 200mm CTE-matched Substrates


News Apr 08, 2018 by Paul Shepard
A SiC MOSFET for Mainstream Adoption

A SiC MOSFET for Mainstream Adoption

This article highlights Infineon CoolSiC™ semiconductor solutions with an implementation of a 1200 V CoolSiC™ MOSFET in three-phase Si based…


1.7kV SiC FETs Enable 1.5kV-Input DC-DC Optimizer for Solar + Storage and Microgrids

1.7kV SiC FETs Enable 1.5kV-Input DC-DC Optimizer for Solar + Storage and Microgrids

TI Expands GaN Power Portfolio with Small and Fast GaN Drivers

TI Expands GaN Power Portfolio with Small and Fast GaN Drivers

The LMG1020 and LMG1210 can deliver switching frequencies of 50 MHz while improving efficiency and enabling five times smaller solution sizes…


The State of Intelligent SiC MOSFET Gate Drivers

The State of Intelligent SiC MOSFET Gate Drivers

This article talks about the major improvements on Augmented Switching which resulted to significant loss reduction on overshoot voltage.


SiC and GaN Systems Design Engineers no Longer “flying blind”

SiC and GaN Systems Design Engineers no Longer “flying blind”

This article highlights Tektronix IsoVu Measurement System for complete galvanic isolation from DUT and uses an electro-optic sensor to convert…


Wide Band Gap is No Mystery

Wide Band Gap is No Mystery

This article highlights Siemens AG GaN power semiconductors technology in the power electronics system design that work at higher switching…


Taking Advantage of SiC’s High Switching Speeds

Taking Advantage of SiC’s High Switching Speeds

This article highlights Littelfuse Incorporated some of the prevailing challenges associated with the use of SiC and best practices to help design…