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Next-Gen AEC-Q101 SiC 1200V MOSFETs and 700V Schottky Barrier Diodes

Next-Gen AEC-Q101 SiC 1200V MOSFETs and 700V Schottky Barrier Diodes

1200V SiC FETs Replace IGBTs and Si FETs without Changes to Gate Drive

1200V SiC FETs Replace IGBTs and Si FETs without Changes to Gate Drive

UnitedSiC’s 1200V SiC FETs Deliver Industry Upgrade Path for IGBT Si SiC-MOSFET Users

UnitedSiC’s 1200V SiC FETs Deliver Industry Upgrade Path for IGBT Si SiC-MOSFET Users

UnitedSiC introduces its new UJ3C1200 series of SiC JFET cascades that simplifies design upgrades and provides an alternative-purchasing source for…


Silicon Carbide enables 30kW Three-Phase Vienna PFC Reference Design

Silicon Carbide enables 30kW Three-Phase Vienna PFC Reference Design


News May 22, 2018 by Paul Shepard
GaN Enables Software-Defined Switch-Mode RF Power Amplifiers

GaN Enables Software-Defined Switch-Mode RF Power Amplifiers


News May 18, 2018 by Paul Shepard
400W and 800W GaN Half-Bridge Evaluation Board

400W and 800W GaN Half-Bridge Evaluation Board

GTAT to Showcase Six-Inch SiC Wafers and More at SNEC 2018 PV Power Expo

GTAT to Showcase Six-Inch SiC Wafers and More at SNEC 2018 PV Power Expo


News May 16, 2018 by Paul Shepard
Compact UL 1577 Certified Drivers for IGBTs and SiC MOSFETs

Compact UL 1577 Certified Drivers for IGBTs and SiC MOSFETs

TDK Acquires Faraday Semi to Bolster Power Solutions with, Si, GaN & 3D Packaging

TDK Acquires Faraday Semi to Bolster Power Solutions with, Si, GaN & 3D Packaging


News May 09, 2018 by Paul Shepard
Rutronik Recom Releases Converter Series for Fast-Switching GaN Drivers

Rutronik Recom Releases Converter Series for Fast-Switching GaN Drivers

Rutronik Inc., a leading global broad-line stocking distributor with a comprehensive portfolio of products and technology solutions for IoT and…


new products May 09, 2018 by Rutronik
PowerBase Pushing for High-Voltage GaN Power Devices

PowerBase Pushing for High-Voltage GaN Power Devices


News May 05, 2018 by Paul Shepard
EPC Announces AEC Q101 Qualification for Two 80V GaN FETs

EPC Announces AEC Q101 Qualification for Two 80V GaN FETs


News May 01, 2018 by Paul Shepard
GaN-based 300V-in, 5A-out Half-Bridge Development Board with Digital Isolation

GaN-based 300V-in, 5A-out Half-Bridge Development Board with Digital Isolation

GaN Power IC Expert to Chair Major Power Sources Association

GaN Power IC Expert to Chair Major Power Sources Association


News Apr 25, 2018 by Paul Shepard
350V GaN Power Transistor is 20-Times Smaller Than Comparable Silicon

350V GaN Power Transistor is 20-Times Smaller Than Comparable Silicon

SiC Enables 98.5% Efficient 6.6-kW Totem-Pole PFC Reference Design

SiC Enables 98.5% Efficient 6.6-kW Totem-Pole PFC Reference Design

Mersen to Acquire 49% of SiC Start-up CALY Technologies

Mersen to Acquire 49% of SiC Start-up CALY Technologies


News Apr 18, 2018 by Paul Shepard
Smart Handling with Surge Current in PFC Using A Silicon Carbide Schottky Diode

Smart Handling with Surge Current in PFC Using A Silicon Carbide Schottky Diode

This article highlights Infineon CoolSiC™ G6 diode as the new sixth generation of SiC Schottky diodes that reduced conduction losses and surge…


50-Amp High-Voltage Vertical GaN Power Semiconductors

50-Amp High-Voltage Vertical GaN Power Semiconductors

NuCurrent Partners with GaN Systems to Develop 150W Wireless Charging

NuCurrent Partners with GaN Systems to Develop 150W Wireless Charging


News Apr 12, 2018 by Paul Shepard