This article highlights Semikron silicon carbide performance in power modules especially SEMITRANS 3 module and SEMITOP E2 baseplate-less module.
This article highlights Semikron silicon carbide performance in power modules especially SEMITRANS 3 module and SEMITOP E2 baseplate-less module.
This article highlights United Silicon Carbide Inc. SiC Cascodes advantages for power electronics applications and…
This article highlights United Silicon Carbide Inc. SiC Cascodes advantages for power electronics applications and comparison with other WBG devices.
Texas Instruments (TI) today announced two new high-speed GaN field-effect transistor (FET) drivers to create more…
Texas Instruments (TI) today announced two new high-speed GaN field-effect transistor (FET) drivers to create more efficient, higher-performing…
Littelfuse, Inc. and Monolith Semiconductor Inc. today added two 1200V silicon carbide (SiC) n‑channel,…
Littelfuse, Inc. and Monolith Semiconductor Inc. today added two 1200V silicon carbide (SiC) n‑channel, enhancement-mode MOSFETs.
This article highlights ROHM Semiconductor BD768xFJ control IC with the ROHM 1700V SiC MOSFET as part of principal…
This article highlights ROHM Semiconductor BD768xFJ control IC with the ROHM 1700V SiC MOSFET as part of principal circuit of the auxiliary power…