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Taking Advantage of SiC’s High Switching Speeds

Taking Advantage of SiC’s High Switching Speeds

This article highlights Littelfuse Incorporated some of the prevailing challenges associated with the use of SiC and best practices to help design…


Great Expectations for GaN Power Devices in Space Applications

Great Expectations for GaN Power Devices in Space Applications


News Mar 24, 2018 by Paul Shepard
Accelerating the Adoption of SiC Power

Accelerating the Adoption of SiC Power

This article highlights Cree | Wolfspeed SiC availability and adoption considering markets today the customer base is harvesting the advantages SiC…


Software-Defined Inverter features 3-Phase GaN Power Stage

Software-Defined Inverter features 3-Phase GaN Power Stage


News Mar 20, 2018 by Paul Shepard
35% Lower Energy Consumption with SiC-Based Propulsion Technology

35% Lower Energy Consumption with SiC-Based Propulsion Technology


News Mar 18, 2018 by Paul Shepard
High-Power GaN Converter IMS Evaluation Platform

High-Power GaN Converter IMS Evaluation Platform

1.6-kW GaN-Based 1-MHz CrM Totem-Pole PFC Reference Design

1.6-kW GaN-Based 1-MHz CrM Totem-Pole PFC Reference Design

Full SiC Performance in Power Modules

Full SiC Performance in Power Modules

This article highlights Semikron silicon carbide performance in power modules especially SEMITRANS 3 module and SEMITOP E2 baseplate-less module.


GaN IC Design Simulation Standards Approved

GaN IC Design Simulation Standards Approved


News Mar 14, 2018 by Paul Shepard
1.8kW RF Device is Industry’s Most Powerful GaN-on-SiC Transistor

1.8kW RF Device is Industry’s Most Powerful GaN-on-SiC Transistor

SiC Cascodes and Their Advantages in Power Electronic Applications

SiC Cascodes and Their Advantages in Power Electronic Applications

This article highlights United Silicon Carbide Inc. SiC Cascodes advantages for power electronics applications and comparison with other WBG devices.


GaN Power Portfolio Expanded with the Industrys Smallest and Fastest GaN Drivers

GaN Power Portfolio Expanded with the Industrys Smallest and Fastest GaN Drivers

Texas Instruments (TI) today announced two new high-speed GaN field-effect transistor (FET) drivers to create more efficient, higher-performing…


1kV SiC FETs Enable 6.6kW Bi-Directional On-Board Charger Design

1kV SiC FETs Enable 6.6kW Bi-Directional On-Board Charger Design


News Mar 12, 2018 by Paul Shepard
Highly-Integrated GaN BUCS for Next Gen Portable SATCOM Terminals

Highly-Integrated GaN BUCS for Next Gen Portable SATCOM Terminals


News Mar 12, 2018 by Paul Shepard
1200V SiC MOSFETs with Ultra-Low On-Resistances Introduced at APEC 2018

1200V SiC MOSFETs with Ultra-Low On-Resistances Introduced at APEC 2018

Littelfuse, Inc. and Monolith Semiconductor Inc. today added two 1200V silicon carbide (SiC) n‑channel, enhancement-mode MOSFETs.


new products Mar 12, 2018 by Littelfuse
SiC in Industrial Auxiliary Power Supplies

SiC in Industrial Auxiliary Power Supplies

This article highlights ROHM Semiconductor BD768xFJ control IC with the ROHM 1700V SiC MOSFET as part of principal circuit of the auxiliary power…


3.3-kW Bridgeless Totem-pole PFC GaN Reference Design

3.3-kW Bridgeless Totem-pole PFC GaN Reference Design


News Mar 10, 2018 by Paul Shepard
GaN Power Modules Deliver Over 1400 W/in3 for 48V to 12V PoLs

GaN Power Modules Deliver Over 1400 W/in3 for 48V to 12V PoLs

GaN Testing Success Beyond 10X of JEDEC Requirements

GaN Testing Success Beyond 10X of JEDEC Requirements


News Mar 09, 2018 by Paul Shepard
eGaN ICs Combining Gate Drivers with High Frequency GaN FETs

eGaN ICs Combining Gate Drivers with High Frequency GaN FETs