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Infineon Introduces MOSFETS for Static Switching  Applications

Infineon Introduces MOSFETS for Static Switching Applications

The new additions to the 600V CooMOS S7 family are aimed at high power, low frequency product designs


Oxford Instruments Partners with LayTec On Compound Semiconductors Devices

Oxford Instruments Partners with LayTec On Compound Semiconductors Devices

Oxford Instruments Plasma Technology and LayTec have announced a new partnership focusing on the development of compound semiconductor technologies.


II-VI Expands Global SiC Production to Meet Market Demand

II-VI Expands Global SiC Production to Meet Market Demand

II-VI establishes its new backend processing line for conductive SiC substrates in Fuzhou, China.


News Apr 29, 2021 by Stephanie Leonida
Infineon Virtual Power Conference

Infineon Virtual Power Conference

Infineon’s Virtual Power Conference, held May 4–6, will feature live expert panels and product demos showcasing the company’s latest energy…


News Apr 28, 2021 by Shannon Cuthrell
Minimizing Thermo-Mechanical Stress in Chipscale eGaN Devices

Minimizing Thermo-Mechanical Stress in Chipscale eGaN Devices

This article highlights EPC EPC2001C and EPC2053 temperature cycling results.


STMicroelectronics Debuts MasterGaN4 for 200W Power Applications

STMicroelectronics Debuts MasterGaN4 for 200W Power Applications

The new power package integrates two 650V GaN power transistors with optimized gate drivers and circuit protection.


Digital DC/DC Converter Delivers 1300W for RF Power Amplifier Applications

Digital DC/DC Converter Delivers 1300W for RF Power Amplifier Applications

This article highlights Flex  BMR685’s power-handling capabilities make it well-suited to these high-power RF Power Amplifier applications, for…


Researchers Explore Carbon Impurities in Gallium Nitride Semiconductors

Researchers Explore Carbon Impurities in Gallium Nitride Semiconductors

Scientists from the Nagoya Institute of Technology (NITech) have conducted innovative research about the role of impurities in Gallium Nitride…


Nexperia Announces New GaN Technology Partnership for EV Development

Nexperia Announces New GaN Technology Partnership for EV Development

Dutch semiconductor manufacturer Nexperia teams up with China’s United Automotive Electronic Systems Co. on a new program to develop GaN-based…


News Apr 24, 2021 by Shannon Cuthrell
Key Foundry Expands to Implement Mass Production of Automotive Semiconductors

Key Foundry Expands to Implement Mass Production of Automotive Semiconductors

This year, Key Foundry’s newly developed Gen3 0.18-micron BCD process and its Gen2 0.13 micron embedded flash process will be used for mass…


News Apr 23, 2021 by Stephanie Leonida
Dual Component 700A Thyristor Modules with Minimized Static and Heat Losses

Dual Component 700A Thyristor Modules with Minimized Static and Heat Losses

This article highlighs Proton Electrotex dual-component A2-type power thyristor module with a baseplate width of 60 mm rated for a voltage of 1800…


Infineon Introduces a New Series Of Welding Diodes

Infineon Introduces a New Series Of Welding Diodes

The new family of housingless power diodes are aimed at medium frequency resistance welding and at other applications requiring high current…


Marelli to Begin Manufacturing New Full SiC Power Modules for Motorsport Applications

Marelli to Begin Manufacturing New Full SiC Power Modules for Motorsport Applications

Italian automotive manufacturer Marelli has announced the launch of a new line of power modules with a 99.5% efficiency rate for motorsport,…


United SiC’s New FET-Jet Tool to Help Engineers Select the Right Device for Their Designs

United SiC’s New FET-Jet Tool to Help Engineers Select the Right Device for Their Designs

UnitedSiC brings power systems engineers a new, registration-free tool that can help with quick decision-making when constructing power designs.


News Apr 17, 2021 by Stephanie Leonida
Single-Point and Multi-Point Signal Grounding

Single-Point and Multi-Point Signal Grounding

A grounding arrangement must be designed and implemented adequately for the electronic equipment’s proper performance


Swansea University and Newport Wafer Fab Awarded New Funding for Manufacture of SiC Substrates

Swansea University and Newport Wafer Fab Awarded New Funding for Manufacture of SiC Substrates

Swansea University and Newport Wafer Fab receive government funds to help lead the UK toward net-zero carbon emission goals and clean up technology…


News Apr 15, 2021 by Stephanie Leonida
Infineon Introduces 650V High-Side And Low-Side Gate Drivers

Infineon Introduces 650V High-Side And Low-Side Gate Drivers

The monolithic level-shift drivers include integrated bootstrap diodes to save space and reduce overall BOM.


Empower Semiconductor Debuts “Fastest” Integrated Voltage Regulator

Empower Semiconductor Debuts “Fastest” Integrated Voltage Regulator

The 10 amp EP7010 can regulate through a 0 to 10 amp load step in less than 500 ns with under a 15 mv voltage droop


ROHM and Sanden Huayu Partner to Create Automotive Tech Lab in Shanghai

ROHM and Sanden Huayu Partner to Create Automotive Tech Lab in Shanghai

ROHM Semiconductor establishes a joint automotive tech laboratory with Sanden Huayu Automotive Air-Conditioning Co.


News Apr 08, 2021 by Shannon Cuthrell
Infineon Expands 600V CoolMOS S7 Family with MOSFETs for Static Switching Applications

Infineon Expands 600V CoolMOS S7 Family with MOSFETs for Static Switching Applications

This article highlights Infineon the 600 V CoolMOS™ S7 family with two new optimized devices for static switching application.