EEPower

Latest Semiconductors Articles

Categories

SiC-based Analog Op Amp with Temperature Gain of 200 at 400 C

SiC-based Analog Op Amp with Temperature Gain of 200 at 400 C

$13.5M for Large-Diameter SiC Substrates for SiC and GaN Devices

$13.5M for Large-Diameter SiC Substrates for SiC and GaN Devices


News Apr 05, 2016 by Jeff Shepard
Multi-Phase 55V Synchronous Boost Controllers Simplify Automotive Power System Design

Multi-Phase 55V Synchronous Boost Controllers Simplify Automotive Power System Design

This article introduces Intersil Corporation's ISL78227 and ISL78229, two 55V two-phase synchronous boost controllers with integrated MOSFET…


new products Apr 01, 2016 by Intersil
Is Only Full SiC the “Real“ SiC?

Is Only Full SiC the “Real“ SiC?

Whenever we talk about Silicon Carbide and its applications, our thoughts jump to Silicon Carbide MOSFET power modules, the so called “Full…


The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

This article highlights Infineon Technologies AG Silicon Carbide transistors development for industrial power electronics applications and the goal…


15MHz GaN Half-Bridge Development Boards

15MHz GaN Half-Bridge Development Boards


News Mar 30, 2016 by Jeff Shepard
Precision Enhancement Mode MOSFET Arrays

Precision Enhancement Mode MOSFET Arrays

Achieving very low or zero standby power for AC-DC power supplies

Achieving very low or zero standby power for AC-DC power supplies

In the future, the average household will have more than 60 devices plugged in and on standby 24 hours a day. From coffee machines and TVs to chargers


Test System for the Power Semiconductor Industry

Test System for the Power Semiconductor Industry

System Solution: “SiC-Inverter for Industrial Motor Drive”

System Solution: “SiC-Inverter for Industrial Motor Drive”

This article discusses the advantages of Silicon Carbide for industrial motor drive inverters over the silicon counter-part of such devices.


LinPak – the new Standard Phase-Leg Module with Exceptional Low Inductance

LinPak – the new Standard Phase-Leg Module with Exceptional Low Inductance

This article introduces ABB Semiconductor's LinPak, a new IGBT module generation that is the enabler for lowest overall stray inductance.


Thermal FOM for Chip-Scale Packaged GaN Transistors

Thermal FOM for Chip-Scale Packaged GaN Transistors

Radiation Action on IV Characteristics of Power Semiconductor Devices Based on Silicon

Radiation Action on IV Characteristics of Power Semiconductor Devices Based on Silicon

Results of theoretical research of influence of cumulative dose on I-V characteristics (IVC) of power semiconductor devices based on silicon are…


650V GaN FET with 41mOhms On-Resistance in a TO-247

650V GaN FET with 41mOhms On-Resistance in a TO-247

1200V SiC FETs in Gruppo PBM Battery Chargers on Show

1200V SiC FETs in Gruppo PBM Battery Chargers on Show

GE gets $2.1M for SiC Development from U.S. Army

GE gets $2.1M for SiC Development from U.S. Army


News Mar 17, 2016 by Jeff Shepard
Little Box Winner on Display in GaN Systems’ APEC Booth

Little Box Winner on Display in GaN Systems’ APEC Booth

Integration of 650V GaN FETs with Drive and Logic

Integration of 650V GaN FETs with Drive and Logic

17 Billion Field-Device Hours Demonstrate GaN Reliability

17 Billion Field-Device Hours Demonstrate GaN Reliability


News Mar 15, 2016 by Jeff Shepard
Copack IGBT and Diode in the ISO247 Package

Copack IGBT and Diode in the ISO247 Package