15MHz GaN Half-Bridge Development Boards

March 30, 2016 by Jeff Shepard

Efficient Power Conversion Corporation (EPC) Introduces the EPC9066, EPC9067, and EPC9068 development boards, which are configurable to a buck converter or as a ZVS class-D amplifier. These boards provide an easy-to-use way for power systems designers to evaluate the exceptional performance of GaN transistors, enabling the designers to get their products into volume production quickly.

All three boards feature a zero reverse recovery (QRR) synchronous bootstrap rectifier augmented gate driver to increase efficiency at high frequency operation, up to 15MHz. The boards can produce a maximum output of 2.7A in the buck and ZVS class-D amplifier configurations. Loss reduction is realized across the entire current range.

The EPC9066/67/68 feature 40V, 65V, and 100V-rated eGaN FETs respectively. These boards are 2” x 1.5” and are laid out in a half-bridge configuration. Each board uses the Texas Instruments LM5113 gate driver with supply and bypass capacitors. The gate driver has been configured with a synchronous FET bootstrap circuit featuring the 100V, 2800mΩ EPC2038 eGaN FET, which eliminates the driver losses induced by the reverse recovery of the internal bootstrap diode. The boards have various probe points and Kelvin measurement points for dc input and output. In addition, the boards provide the capability to install a heat sink for high power operation.

The operating load conditions, including configuration, of the development board determine the optimal design load voltage and resistance, resulting in a specific board’s performance. The device parameters for each board (all boards feature the EPC2038 eGaN® FET as the Bootstrap FET with VDS(max) of 100V and RDS(on) max of 2800mΩ) are as follows: Demonstration Board EPC9066 features the EPC8004 eGaN® FET with a VDS(max) of 40V, and RDS(on) maximum of 110mΩ; Demonstration Board EPC9067 features the EPC8009 eGaN® FET with a VDS(max) of 65V, and RDS(on) maximum of 130mΩ; Demonstration Board EPC9068 features the EPC8010 eGaN® FET with a VDS(max) of 100V, and RDS(on) maximum of 160mΩ. The EPC9066/9067/9068 are priced at $158.13 each and are available for immediate delivery.