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Achieving very low or zero standby power for AC-DC power supplies

Achieving very low or zero standby power for AC-DC power supplies

In the future, the average household will have more than 60 devices plugged in and on standby 24 hours a day. From coffee machines and TVs to chargers


Test System for the Power Semiconductor Industry

Test System for the Power Semiconductor Industry

System Solution: “SiC-Inverter for Industrial Motor Drive”

System Solution: “SiC-Inverter for Industrial Motor Drive”

This article discusses the advantages of Silicon Carbide for industrial motor drive inverters over the silicon counter-part of such devices.


LinPak – the new Standard Phase-Leg Module with Exceptional Low Inductance

LinPak – the new Standard Phase-Leg Module with Exceptional Low Inductance

This article introduces ABB Semiconductor's LinPak, a new IGBT module generation that is the enabler for lowest overall stray inductance.


Thermal FOM for Chip-Scale Packaged GaN Transistors

Thermal FOM for Chip-Scale Packaged GaN Transistors

Radiation Action on IV Characteristics of Power Semiconductor Devices Based on Silicon

Radiation Action on IV Characteristics of Power Semiconductor Devices Based on Silicon

Results of theoretical research of influence of cumulative dose on I-V characteristics (IVC) of power semiconductor devices based on silicon are…


650V GaN FET with 41mOhms On-Resistance in a TO-247

650V GaN FET with 41mOhms On-Resistance in a TO-247

1200V SiC FETs in Gruppo PBM Battery Chargers on Show

1200V SiC FETs in Gruppo PBM Battery Chargers on Show

GE gets $2.1M for SiC Development from U.S. Army

GE gets $2.1M for SiC Development from U.S. Army


News Mar 17, 2016 by Jeff Shepard
Little Box Winner on Display in GaN Systems’ APEC Booth

Little Box Winner on Display in GaN Systems’ APEC Booth

Integration of 650V GaN FETs with Drive and Logic

Integration of 650V GaN FETs with Drive and Logic

17 Billion Field-Device Hours Demonstrate GaN Reliability

17 Billion Field-Device Hours Demonstrate GaN Reliability


News Mar 15, 2016 by Jeff Shepard
Copack IGBT and Diode in the ISO247 Package

Copack IGBT and Diode in the ISO247 Package

1-GHz Optically-Isolated Measurement System for GaN and SiC

1-GHz Optically-Isolated Measurement System for GaN and SiC

Monolith Semi to Demonstrate SiC MOSFETs at APEC

Monolith Semi to Demonstrate SiC MOSFETs at APEC

€1B for GaN-on-Silicon, MEMs, Silicon Photonics Research

€1B for GaN-on-Silicon, MEMs, Silicon Photonics Research


News Mar 13, 2016 by Jeff Shepard
1200V SiC Diode for Rugged High-Frequency Inverters

1200V SiC Diode for Rugged High-Frequency Inverters

Global Power Technologies’ SiC on Show in Long Beach

Global Power Technologies’ SiC on Show in Long Beach

6-inch SiC Production expanding in Asia and U.S.A.

6-inch SiC Production expanding in Asia and U.S.A.


News Mar 10, 2016 by Jeff Shepard
Wolfspeed to Demo 900V SiC FETs and 3-Phase Power Modules

Wolfspeed to Demo 900V SiC FETs and 3-Phase Power Modules