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The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

The Future of Power Semiconductors: Rugged and High Performing Silicon Carbide Transistors

This article highlights Infineon Technologies AG Silicon Carbide transistors development for industrial power electronics applications and the goal…

Technical Articles Apr 01, 2016 by Peter Friedrichs
15MHz GaN Half-Bridge Development Boards

15MHz GaN Half-Bridge Development Boards

News Mar 30, 2016 by Jeff Shepard
Precision Enhancement Mode MOSFET Arrays

Precision Enhancement Mode MOSFET Arrays

new products Mar 30, 2016 by Jeff Shepard
Achieving very low or zero standby power for AC-DC power supplies

Achieving very low or zero standby power for AC-DC power supplies

In the future, the average household will have more than 60 devices plugged in and on standby 24 hours a day. From coffee machines and TVs to chargers

Technical Articles Mar 30, 2016 by Florian Mueller
Test System for the Power Semiconductor Industry

Test System for the Power Semiconductor Industry

new products Mar 29, 2016 by Jeff Shepard
System Solution: “SiC-Inverter for Industrial Motor Drive”

System Solution: “SiC-Inverter for Industrial Motor Drive”

This article discusses the advantages of Silicon Carbide for industrial motor drive inverters over the silicon counter-part of such devices.

Technical Articles Mar 28, 2016 by Aly Mashaly
LinPak – the new Standard Phase-Leg Module with Exceptional Low Inductance

LinPak – the new Standard Phase-Leg Module with Exceptional Low Inductance

This article introduces ABB Semiconductor's LinPak, a new IGBT module generation that is the enabler for lowest overall stray inductance.

Technical Articles Mar 25, 2016 by Raffael Schnell
Thermal FOM for Chip-Scale Packaged GaN Transistors

Thermal FOM for Chip-Scale Packaged GaN Transistors

News Mar 24, 2016 by Power Pulse1595211359
Radiation Action on IV Characteristics of Power Semiconductor Devices Based on Silicon

Radiation Action on IV Characteristics of Power Semiconductor Devices Based on Silicon

Results of theoretical research of influence of cumulative dose on I-V characteristics (IVC) of power semiconductor devices based on silicon are…

Technical Articles Mar 23, 2016 by AV Stavtsev
650V GaN FET with 41mOhms On-Resistance in a TO-247

650V GaN FET with 41mOhms On-Resistance in a TO-247

new products Mar 23, 2016 by Power Pulse1595211359
1200V SiC FETs in Gruppo PBM Battery Chargers on Show

1200V SiC FETs in Gruppo PBM Battery Chargers on Show

new products Mar 22, 2016 by Power Pulse1595211359
GE gets $2.1M for SiC Development from U.S. Army

GE gets $2.1M for SiC Development from U.S. Army

News Mar 17, 2016 by Jeff Shepard
Little Box Winner on Display in GaN Systems’ APEC Booth

Little Box Winner on Display in GaN Systems’ APEC Booth

News Mar 16, 2016 by Power Pulse1595211359
Integration of 650V GaN FETs with Drive and Logic

Integration of 650V GaN FETs with Drive and Logic

News Mar 15, 2016 by Power Pulse1595211359
17 Billion Field-Device Hours Demonstrate GaN Reliability

17 Billion Field-Device Hours Demonstrate GaN Reliability

News Mar 15, 2016 by Jeff Shepard
Copack IGBT and Diode in the ISO247 Package

Copack IGBT and Diode in the ISO247 Package

new products Mar 15, 2016 by Jeff Shepard
1-GHz Optically-Isolated Measurement System for GaN and SiC

1-GHz Optically-Isolated Measurement System for GaN and SiC

new products Mar 15, 2016 by Power Pulse1595211359
Monolith Semi to Demonstrate SiC MOSFETs at APEC

Monolith Semi to Demonstrate SiC MOSFETs at APEC

new products Mar 14, 2016 by Power Pulse1595211359
€1B for GaN-on-Silicon, MEMs, Silicon Photonics Research

€1B for GaN-on-Silicon, MEMs, Silicon Photonics Research

News Mar 13, 2016 by Jeff Shepard
1200V SiC Diode for Rugged High-Frequency Inverters

1200V SiC Diode for Rugged High-Frequency Inverters

new products Mar 13, 2016 by Power Pulse1595211359