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200V and 650V Enhancement-Mode GaN Devices on 8” Wafers

200V and 650V Enhancement-Mode GaN Devices on 8” Wafers


News Jun 13, 2017 by Jeff Shepard
First Automotive-Qualified GaN FETs

First Automotive-Qualified GaN FETs

Transphorm Inc. announced that its second generation, JEDEC-qualified high voltage gallium nitride (GaN) technology is now the industry’s first…


new products Jun 13, 2017 by Transphorm
First USB Type-C Load Switch

First USB Type-C Load Switch

Alpha and Omega Semiconductor Limited introduced the AOZ1375, AOS’s first Type-C Power Delivery full-compliant power protection switch.


SiC - the High Performance Power Semiconductor

SiC - the High Performance Power Semiconductor

This article discusses the Silicon Carbide Technology with Chris Dries from USCi.


Encapsulated Surface Mount Fuse Designed for Intrinsic Safety Protection Certified to UL 913

Encapsulated Surface Mount Fuse Designed for Intrinsic Safety Protection Certified to UL 913

Littelfuse, Inc., the global leader in circuit protection, today introduced the first encapsulated surface mount fuse designed for intrinsic safety…


new products Jun 12, 2017 by Littelfuse
Lowest Rss MOSFET with Advanced CSP Technology

Lowest Rss MOSFET with Advanced CSP Technology

Alpha and Omega Semiconductor Limited announced the release of AOC3860, a common-drain 12V dual n-channel MOSFET with the lowest on-resistance in…


A Performance Comparison of GaN E-HEMTs versus SiC MOSFETs in Power Switching Applications

A Performance Comparison of GaN E-HEMTs versus SiC MOSFETs in Power Switching Applications

This article highlights GaN Systems Inc. comparison of GaN E-HEMTs and SiC MOSFET performance and characteristics in power switching applications.


150V High-Side MOSFET Driver Supports 100% Duty Cycle

150V High-Side MOSFET Driver Supports 100% Duty Cycle

GaN Enables 20W/in3 65W AC-DC with Over 94% Efficiency

GaN Enables 20W/in3 65W AC-DC with Over 94% Efficiency


News Jun 06, 2017 by Jeff Shepard
High Power Density Discrete 1200V IGBT in TO-247PLUS

High Power Density Discrete 1200V IGBT in TO-247PLUS

RFMicrowave Solutions Showcasing at IMS 2017

RFMicrowave Solutions Showcasing at IMS 2017

AVX Corporation, a leading manufacturer and supplier of passive components and interconnect solutions, is showcasing its vast portfolio of…


new products Jun 05, 2017 by AVX
Monolithic GaN Half Bridge Enables 85% Efficient 12V-to-1.8V PoLs

Monolithic GaN Half Bridge Enables 85% Efficient 12V-to-1.8V PoLs

1200V CoolSiC™ MOSFET: High Performance Complemented by High Reliability

1200V CoolSiC™ MOSFET: High Performance Complemented by High Reliability

This article discusses the advantages and benefits of applying Infineon's SiC MOSFETs with blocking voltages of 1200V in various application…


150W GaN-Based AC-DC Reference Design Over 95% Efficient

150W GaN-Based AC-DC Reference Design Over 95% Efficient


News Jun 01, 2017 by Jeff Shepard
Joining Forces in Strategic SiC Collaboration

Joining Forces in Strategic SiC Collaboration

Danfoss Silicon Power is establishing production in the US and entering into a collaboration with industrial giant General Electric (GE)


SiC MOSFETs in Optimized Packaging Deliver a 3× Reduction in Switching Losses, Enabling Affordable High-Efficiency EV Battery Chargers

SiC MOSFETs in Optimized Packaging Deliver a 3× Reduction in Switching Losses, Enabling Affordable High-Efficiency EV Battery Chargers

This article highlights Wolfspeed C3M™ SiC MOSFETs that considers package inductance and printed circuit board layout as factors for best system…


Novel Technique to Reduce Substrate Tilt amp Improve Bondline Control between AlN Substrate and AlSiC Baseplate in IGBT Modules

Novel Technique to Reduce Substrate Tilt amp Improve Bondline Control between AlN Substrate and AlSiC Baseplate in IGBT Modules

This article features a novel technique to redue substrate tilt and improve bondline control between AIN substrate and AlSiC Baseplate in IGBT…


High-Speed Fuses for Semiconductor Device Protection

High-Speed Fuses for Semiconductor Device Protection

MOSFET-based Modules for Motor Drives up to 100W

MOSFET-based Modules for Motor Drives up to 100W

200V GaN Power Transistor is 12x Smaller Than MOSFETs

200V GaN Power Transistor is 12x Smaller Than MOSFETs