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GaN Enables 99% Efficient 2kW Servo Drives and Robotics

GaN Enables 99% Efficient 2kW Servo Drives and Robotics


News Jun 26, 2017 by Jeff Shepard
Interview Danfoss Silicon Power Establishes Manufacturing in Utica New York

Interview Danfoss Silicon Power Establishes Manufacturing in Utica New York

This article discusses Danfoss Silicon Power establishing a second production site in Utica, New York, USA.


Hybrid DC Link Capacitor Banks Target SiC and GaN Converters

Hybrid DC Link Capacitor Banks Target SiC and GaN Converters


News Jun 25, 2017 by Jeff Shepard
50 Volt DC-DC Bricks Enable GaN Wireless Power Amplifiers

50 Volt DC-DC Bricks Enable GaN Wireless Power Amplifiers

Artesyn Embedded Technologies today announced three new series of 50-volt dc-dc converter modules


EiceDRIVER and CoolMOS CFD2 Join for High Efficiency in Refrigeration

EiceDRIVER and CoolMOS CFD2 Join for High Efficiency in Refrigeration

This article discusses the benefits and advantages of CoolMOS CFD2 in terms of efficiency in motor drive applications and gives recommended layouts.


Half-Bridge vs. Sixpack Modules for Motor Drives

Half-Bridge vs. Sixpack Modules for Motor Drives

This article discusses how the implementation of three module approach can help lower the total cost of ownership and maximum junction temperature.


Bosch Bets a Billion Euros on IoT Semiconductors

Bosch Bets a Billion Euros on IoT Semiconductors


News Jun 20, 2017 by Jeff Shepard
1200V Silicon-Carbide Diodes Deliver Superior Efficiency

1200V Silicon-Carbide Diodes Deliver Superior Efficiency

This article introduces STMicroelectronics' full range of 2A-40A 1200V silicon-carbide (SiC) JBS (Junction Barrier Schottky) diodes


Reliable SiC Power Devices for Automotive Applications

Reliable SiC Power Devices for Automotive Applications

This article focuses on automotive-grade SiC power devices, including some of their common applications and reliability data.


WIN Semi Expands GaN and GaAs Process Offerings

WIN Semi Expands GaN and GaAs Process Offerings


News Jun 14, 2017 by Paul Shepard
200V and 650V Enhancement-Mode GaN Devices on 8” Wafers

200V and 650V Enhancement-Mode GaN Devices on 8” Wafers


News Jun 13, 2017 by Jeff Shepard
First Automotive-Qualified GaN FETs

First Automotive-Qualified GaN FETs

Transphorm Inc. announced that its second generation, JEDEC-qualified high voltage gallium nitride (GaN) technology is now the industry’s first…


new products Jun 13, 2017 by Transphorm
First USB Type-C Load Switch

First USB Type-C Load Switch

Alpha and Omega Semiconductor Limited introduced the AOZ1375, AOS’s first Type-C Power Delivery full-compliant power protection switch.


SiC - the High Performance Power Semiconductor

SiC - the High Performance Power Semiconductor

This article discusses the Silicon Carbide Technology with Chris Dries from USCi.


Encapsulated Surface Mount Fuse Designed for Intrinsic Safety Protection Certified to UL 913

Encapsulated Surface Mount Fuse Designed for Intrinsic Safety Protection Certified to UL 913

Littelfuse, Inc., the global leader in circuit protection, today introduced the first encapsulated surface mount fuse designed for intrinsic safety…


new products Jun 12, 2017 by Littelfuse
Lowest Rss MOSFET with Advanced CSP Technology

Lowest Rss MOSFET with Advanced CSP Technology

Alpha and Omega Semiconductor Limited announced the release of AOC3860, a common-drain 12V dual n-channel MOSFET with the lowest on-resistance in…


A Performance Comparison of GaN E-HEMTs versus SiC MOSFETs in Power Switching Applications

A Performance Comparison of GaN E-HEMTs versus SiC MOSFETs in Power Switching Applications

This article highlights GaN Systems Inc. comparison of GaN E-HEMTs and SiC MOSFET performance and characteristics in power switching applications.


150V High-Side MOSFET Driver Supports 100% Duty Cycle

150V High-Side MOSFET Driver Supports 100% Duty Cycle

GaN Enables 20W/in3 65W AC-DC with Over 94% Efficiency

GaN Enables 20W/in3 65W AC-DC with Over 94% Efficiency


News Jun 06, 2017 by Jeff Shepard
High Power Density Discrete 1200V IGBT in TO-247PLUS

High Power Density Discrete 1200V IGBT in TO-247PLUS