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JEDEC Committee to set Standards for WBG Power Semiconductors

JEDEC Committee to set Standards for WBG Power Semiconductors


News Sep 11, 2017 by Paul Shepard
Newly-Discovered Semiconductor Dynamics May Help Improve Energy Efficiency

Newly-Discovered Semiconductor Dynamics May Help Improve Energy Efficiency


News Sep 11, 2017 by Paul Shepard
Signing Seals Compound Semiconductor Cluster in South-East Wales

Signing Seals Compound Semiconductor Cluster in South-East Wales


News Sep 11, 2017 by Paul Shepard
Thyristors for Current Impulses Commutation in Amplitude Range of Hundreds kA and Duration Range of Hundreds µs

Thyristors for Current Impulses Commutation in Amplitude Range of Hundreds kA and Duration Range of Hundreds µs

This article discusses the variety of improvements of the new generation of silicon pulse thyristors for commutation of current impulses.


1200-Volt SiC Schottkys for High-Temperature Designs

1200-Volt SiC Schottkys for High-Temperature Designs

60V High-Side N-Channel MOSFET Driver Supports 100% Duty Cycles

60V High-Side N-Channel MOSFET Driver Supports 100% Duty Cycles

Off-Line Controllers with Integrated FET Deliver up to 48W

Off-Line Controllers with Integrated FET Deliver up to 48W

SiC Power Modules for a Wide Application Range Innovative Power Devices for a Sustainable Future

SiC Power Modules for a Wide Application Range Innovative Power Devices for a Sustainable Future

This article explains in detail the innovation potential and benefits of integrating SiC-technology in power electronics systems.


IEEE Rates Peregrine Semiconductor as a Leader in “Patent Power”

IEEE Rates Peregrine Semiconductor as a Leader in “Patent Power”


News Sep 07, 2017 by Paul Shepard
GaN-based High-Power, Near Field WattUp Charging Solution

GaN-based High-Power, Near Field WattUp Charging Solution


News Sep 07, 2017 by Paul Shepard
COLD SPLIT Provides Significant Cost Advantages for SiC Substrates and Devices

COLD SPLIT Provides Significant Cost Advantages for SiC Substrates and Devices

This article highlights Siltectra's Cold Split, a kerf-free wafering technique, and discusses its advantages over conventional techniques.


Compound Semiconductor Applications Catapult appoints CEO

Compound Semiconductor Applications Catapult appoints CEO


News Sep 02, 2017 by Paul Shepard
Pressureless Sinter Joining for Next-Gen GaN & SiC Power Semis

Pressureless Sinter Joining for Next-Gen GaN & SiC Power Semis


News Sep 01, 2017 by Paul Shepard
Silicon Solves Problems for Next-Generation Battery Technology

Silicon Solves Problems for Next-Generation Battery Technology


News Aug 31, 2017 by Paul Shepard
ROHM now Offering SiC, IGBTs and Gate Drivers in India

ROHM now Offering SiC, IGBTs and Gate Drivers in India


News Aug 30, 2017 by Paul Shepard
An Intelligent IGBT Module for Single-Ended Induction Heating Applications: All-in-One Solution for Induction Cooking System

An Intelligent IGBT Module for Single-Ended Induction Heating Applications: All-in-One Solution for Induction Cooking System

This article introduces Alpha & Omega Semiconductors' new IGBT Module that is specifically designed for induction heating (IH)…


250W 50V GaN HEMT with High Efficiency to 3.0GHz

250W 50V GaN HEMT with High Efficiency to 3.0GHz

SII Semiconductor Changes Name to ABLIC Inc.

SII Semiconductor Changes Name to ABLIC Inc.


News Aug 24, 2017 by Paul Shepard
5mm x 5mm DrMOS Power Module Delivering up to 60A Revealed

5mm x 5mm DrMOS Power Module Delivering up to 60A Revealed

Alpha and Omega Semiconductor Limited (AOS) today introduced the AOZ5131QI, the latest generation of power modules.


50V GaN HEMT Family Released with a High Efficiency 30GHz 250W Device

50V GaN HEMT Family Released with a High Efficiency 30GHz 250W Device

Wolfspeed has extended its family of 50V unmatched GaN HEMT RF power devices.


new products Aug 24, 2017 by Wolfspeed