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A New Thyristor Platform Optimized for 10 GW UHVDC Transmission

A New Thyristor Platform Optimized for 10 GW UHVDC Transmission

This article discusses the advantages and improvements of the 3rd generation thyristor over the conventional and previous generation thyristor.


60W Class-E Amplifier Dev Board with 200V GaN FET Enabling High Efficiency Up to 15MHz

60W Class-E Amplifier Dev Board with 200V GaN FET Enabling High Efficiency Up to 15MHz


News Aug 23, 2017 by Paul Shepard
200 V Gallium Nitride Power Transistor

200 V Gallium Nitride Power Transistor

Efficient Power Conversion (EPC) Introduces 200 V Gallium Nitride Power Transistor 12 Times Smaller Than Equivalently Rated MOSFETS EPC2046 GaN…


new products Aug 23, 2017 by EPC
Comparing Power Transistors Operating at HighTemperature Tj200C Knowing the Transistors in Designs

Comparing Power Transistors Operating at HighTemperature Tj200C Knowing the Transistors in Designs

This article highlights LTEC Corporation SCT30N120 and SCH2080KE power transistors physical analysis on high-temperature operation.


80A Discrete Bidirectional TVS Diode Array Added with Lower Standoff Voltages to Protect Lower Voltage Power Buses

80A Discrete Bidirectional TVS Diode Array Added with Lower Standoff Voltages to Protect Lower Voltage Power Buses

Littelfuse, Inc., the global leader in circuit protection, today introduced 80A discrete bidirectional TVS Diode Arrays as the latest addition to…


new products Aug 21, 2017 by Littelfuse
Interview: Navitas on Design Simplicity - GaN Power ICs with iDrive

Interview: Navitas on Design Simplicity - GaN Power ICs with iDrive

This article talks about the interview with Gene Sheridan from Navitas Semiconductors on GaN Technology.


Important Parameters in Choosing an Digital Storage Oscilloscopes (DSO) - Part 2

Important Parameters in Choosing an Digital Storage Oscilloscopes (DSO) - Part 2

This article discusses the important parameters to remember in choosing the right digital storage oscilloscope for designing and testing circuitry.


DC-DC Converters for Driving Next-Gen SiC MOSFETs

DC-DC Converters for Driving Next-Gen SiC MOSFETs

Microsemi to Develop 1.7kV and 3.3kV SiC FETS and Diodes for PowerAmerica

Microsemi to Develop 1.7kV and 3.3kV SiC FETS and Diodes for PowerAmerica


News Aug 17, 2017 by Paul Shepard
High-Purity Silicon Carbide Technology Platform for SiC Power Devices

High-Purity Silicon Carbide Technology Platform for SiC Power Devices


News Aug 16, 2017 by Paul Shepard
Ultrafast RF MOSFET Driver Supports 8ns Pulse Widths

Ultrafast RF MOSFET Driver Supports 8ns Pulse Widths

Electric Power Research Institute Funds GRAPES SiC Project

Electric Power Research Institute Funds GRAPES SiC Project


News Aug 15, 2017 by Paul Shepard
Enhanced LTSpice Model Simplifies Designing with GaN

Enhanced LTSpice Model Simplifies Designing with GaN


News Aug 15, 2017 by Paul Shepard
SunPower Unveils Silicon Valley Pilot Line for High-Efficiency Solar Panels

SunPower Unveils Silicon Valley Pilot Line for High-Efficiency Solar Panels


News Aug 14, 2017 by Paul Shepard
80 Titanium Efficiency Rating in Next-Generation Telecom and Data Center Applications Enabled by New SiC MOSFET

80 Titanium Efficiency Rating in Next-Generation Telecom and Data Center Applications Enabled by New SiC MOSFET

Wolfspeed, A Cree Company announces that it has advanced the development of high efficiency data center power supplies through the implementation…


new products Aug 11, 2017 by Wolfspeed
Dual-Transistor GaN-on-SiC Amplifier Lowers Telecom Infrastructure Costs

Dual-Transistor GaN-on-SiC Amplifier Lowers Telecom Infrastructure Costs

8-Bit MCUs for IGBT Control

8-Bit MCUs for IGBT Control

SiC MOSFETs Enable 80+ Titanium Efficiency in Data Center Power

SiC MOSFETs Enable 80+ Titanium Efficiency in Data Center Power


News Aug 10, 2017 by Paul Shepard
GaN Gives Radar 360 Degree Threat Detection Ability

GaN Gives Radar 360 Degree Threat Detection Ability


News Aug 08, 2017 by Paul Shepard
II-VI Inc. Acquires 6-inch GaN/SiC/InP Wafer Fab in U.K.

II-VI Inc. Acquires 6-inch GaN/SiC/InP Wafer Fab in U.K.


News Aug 07, 2017 by Paul Shepard