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COLD SPLIT Provides Significant Cost Advantages for SiC Substrates and Devices

COLD SPLIT Provides Significant Cost Advantages for SiC Substrates and Devices

This article highlights Siltectra's Cold Split, a kerf-free wafering technique, and discusses its advantages over conventional techniques.


Compound Semiconductor Applications Catapult appoints CEO

Compound Semiconductor Applications Catapult appoints CEO


News Sep 02, 2017 by Paul Shepard
Pressureless Sinter Joining for Next-Gen GaN & SiC Power Semis

Pressureless Sinter Joining for Next-Gen GaN & SiC Power Semis


News Sep 01, 2017 by Paul Shepard
Silicon Solves Problems for Next-Generation Battery Technology

Silicon Solves Problems for Next-Generation Battery Technology


News Aug 31, 2017 by Paul Shepard
ROHM now Offering SiC, IGBTs and Gate Drivers in India

ROHM now Offering SiC, IGBTs and Gate Drivers in India


News Aug 30, 2017 by Paul Shepard
An Intelligent IGBT Module for Single-Ended Induction Heating Applications: All-in-One Solution for Induction Cooking System

An Intelligent IGBT Module for Single-Ended Induction Heating Applications: All-in-One Solution for Induction Cooking System

This article introduces Alpha & Omega Semiconductors' new IGBT Module that is specifically designed for induction heating (IH)…


250W 50V GaN HEMT with High Efficiency to 3.0GHz

250W 50V GaN HEMT with High Efficiency to 3.0GHz

SII Semiconductor Changes Name to ABLIC Inc.

SII Semiconductor Changes Name to ABLIC Inc.


News Aug 24, 2017 by Paul Shepard
5mm x 5mm DrMOS Power Module Delivering up to 60A Revealed

5mm x 5mm DrMOS Power Module Delivering up to 60A Revealed

Alpha and Omega Semiconductor Limited (AOS) today introduced the AOZ5131QI, the latest generation of power modules.


50V GaN HEMT Family Released with a High Efficiency 30GHz 250W Device

50V GaN HEMT Family Released with a High Efficiency 30GHz 250W Device

Wolfspeed has extended its family of 50V unmatched GaN HEMT RF power devices.


new products Aug 24, 2017 by Wolfspeed
A New Thyristor Platform Optimized for 10 GW UHVDC Transmission

A New Thyristor Platform Optimized for 10 GW UHVDC Transmission

This article discusses the advantages and improvements of the 3rd generation thyristor over the conventional and previous generation thyristor.


60W Class-E Amplifier Dev Board with 200V GaN FET Enabling High Efficiency Up to 15MHz

60W Class-E Amplifier Dev Board with 200V GaN FET Enabling High Efficiency Up to 15MHz


News Aug 23, 2017 by Paul Shepard
200 V Gallium Nitride Power Transistor

200 V Gallium Nitride Power Transistor

Efficient Power Conversion (EPC) Introduces 200 V Gallium Nitride Power Transistor 12 Times Smaller Than Equivalently Rated MOSFETS EPC2046 GaN…


new products Aug 23, 2017 by EPC
Comparing Power Transistors Operating at HighTemperature Tj200C Knowing the Transistors in Designs

Comparing Power Transistors Operating at HighTemperature Tj200C Knowing the Transistors in Designs

This article highlights LTEC Corporation SCT30N120 and SCH2080KE power transistors physical analysis on high-temperature operation.


80A Discrete Bidirectional TVS Diode Array Added with Lower Standoff Voltages to Protect Lower Voltage Power Buses

80A Discrete Bidirectional TVS Diode Array Added with Lower Standoff Voltages to Protect Lower Voltage Power Buses

Littelfuse, Inc., the global leader in circuit protection, today introduced 80A discrete bidirectional TVS Diode Arrays as the latest addition to…


new products Aug 21, 2017 by Littelfuse
Interview: Navitas on Design Simplicity - GaN Power ICs with iDrive

Interview: Navitas on Design Simplicity - GaN Power ICs with iDrive

This article talks about the interview with Gene Sheridan from Navitas Semiconductors on GaN Technology.


Important Parameters in Choosing an Digital Storage Oscilloscopes (DSO) - Part 2

Important Parameters in Choosing an Digital Storage Oscilloscopes (DSO) - Part 2

This article discusses the important parameters to remember in choosing the right digital storage oscilloscope for designing and testing circuitry.


DC-DC Converters for Driving Next-Gen SiC MOSFETs

DC-DC Converters for Driving Next-Gen SiC MOSFETs

Microsemi to Develop 1.7kV and 3.3kV SiC FETS and Diodes for PowerAmerica

Microsemi to Develop 1.7kV and 3.3kV SiC FETS and Diodes for PowerAmerica


News Aug 17, 2017 by Paul Shepard
High-Purity Silicon Carbide Technology Platform for SiC Power Devices

High-Purity Silicon Carbide Technology Platform for SiC Power Devices


News Aug 16, 2017 by Paul Shepard