GaN High Electron Mobility Transistors (GaN HEMT) have a lower driving loss and shorter deadtime circuit benefits due to significantly…
GaN High Electron Mobility Transistors (GaN HEMT) have a lower driving loss and shorter deadtime circuit benefits due to significantly…
There is no doubt that power electronics plays a critical role in the evolution of the overall infrastructure of energy…
There is no doubt that power electronics plays a critical role in the evolution of the overall infrastructure of energy supply, from motion control…
In the field of power electronics, especially within the automotive and railway segments, the miniaturization and…
In the field of power electronics, especially within the automotive and railway segments, the miniaturization and heightened efficiency of…
Wide bandgap GaN and SiC devices are expected to experience high levels of growth in applications ranging from power…
Wide bandgap GaN and SiC devices are expected to experience high levels of growth in applications ranging from power conversion to RF transistors…
TDK Corporation today announced it has extended the lineup of CeraLink™ capacitors to include modular flex-assembly…
TDK Corporation today announced it has extended the lineup of CeraLink™ capacitors to include modular flex-assembly technology with CeraLink FA…
This article highlights Infineon 1EDS20I12SV and a conventional gate driver IC, which gate drivers are operated by…
This article highlights Infineon 1EDS20I12SV and a conventional gate driver IC, which gate drivers are operated by FF1200R12IE5 1200A/1200V power…
This article highlights Hitachi Europe, Ltd. introduction of nHPD2 Power Modules as the first high-voltage IGBT-based…
This article highlights Hitachi Europe, Ltd. introduction of nHPD2 Power Modules as the first high-voltage IGBT-based power module for traction, etc..
UnitedSiC announced the launch of its UF3C FAST series of 650V and 1200V high-performance silicon carbide FETs in a…
UnitedSiC announced the launch of its UF3C FAST series of 650V and 1200V high-performance silicon carbide FETs in a standard TO-247-3L package.
In this interview, US correspondent for Bodo's Power, Henning Wriedt, speaks with Graham Maggs, VP Marketing for Europe…
In this interview, US correspondent for Bodo's Power, Henning Wriedt, speaks with Graham Maggs, VP Marketing for Europe at Mouser Electronics,…
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