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QuasiClass E Achieves Power Control and ZISZVS

QuasiClass E Achieves Power Control and ZISZVS

This article features power electronics consultants-engineers basic Quasi Class E circuit as first in series approach to HF power conversion and…


CoolGaN™ 600V Half-Bridge Evaluation Platform Featuring GaN EiceDRIVER™

CoolGaN™ 600V Half-Bridge Evaluation Platform Featuring GaN EiceDRIVER™


News Nov 27, 2018 by Paul Shepard
Hermetic, High-Voltage Cascode GaN Power FETs

Hermetic, High-Voltage Cascode GaN Power FETs

Reduce Size and Increase Efficiency with GaN-based LLC Solutions

Reduce Size and Increase Efficiency with GaN-based LLC Solutions

GaN High Electron Mobility Transistors (GaN HEMT) have a lower driving loss and shorter deadtime circuit benefits due to significantly…


High Bs Ferrite Material for High Power Application

High Bs Ferrite Material for High Power Application

There is no doubt that power electronics plays a critical role in the evolution of the overall infrastructure of energy supply, from motion control…


Silicon-Free Transistors for Next-Generation Nanochips out of Thin Air

Silicon-Free Transistors for Next-Generation Nanochips out of Thin Air


News Nov 20, 2018 by Paul Shepard
Modular Capacitor Assemblies Target GaN- and SiC-based Converters

Modular Capacitor Assemblies Target GaN- and SiC-based Converters


News Nov 20, 2018 by Paul Shepard
130nm Platform Features High-Performance, Low-Power and Low-Cost Structured Array

130nm Platform Features High-Performance, Low-Power and Low-Cost Structured Array


News Nov 19, 2018 by Paul Shepard
Development of a Wideband High-Precision Current Sensor

Development of a Wideband High-Precision Current Sensor

In the field of power electronics, especially within the automotive and railway segments, the miniaturization and heightened efficiency of…


1700V SiC Power Module Claims High Reliability in Extreme Environments

1700V SiC Power Module Claims High Reliability in Extreme Environments

Temperature Stability Assessment of GaN Power Amplifiers with Matching Tantalum Capacitors

Temperature Stability Assessment of GaN Power Amplifiers with Matching Tantalum Capacitors

Wide bandgap GaN and SiC devices are expected to experience high levels of growth in applications ranging from power conversion to RF transistors…


High Power GaN Solutions for Server and Automotive Applications

High Power GaN Solutions for Server and Automotive Applications

TDK Adds Modular Flexassembly Technology to CeraLink Ceramic Capacitor Series

TDK Adds Modular Flexassembly Technology to CeraLink Ceramic Capacitor Series

TDK Corporation today announced it has extended the lineup of CeraLink™ capacitors to include modular flex-assembly technology with CeraLink FA…


Current Source Gate Drivers Boost the Turn-On Performance of IGBT

Current Source Gate Drivers Boost the Turn-On Performance of IGBT

This article highlights Infineon 1EDS20I12SV and a conventional gate driver IC, which gate drivers are operated by FF1200R12IE5 1200A/1200V power…


Infineon Acquires SiC-Specialist Siltectra for €124 Million

Infineon Acquires SiC-Specialist Siltectra for €124 Million


News Nov 11, 2018 by Paul Shepard
100V Half-Bridge MOSFET Drivers for 12V-to-48V Bidirectional DC-DCs

100V Half-Bridge MOSFET Drivers for 12V-to-48V Bidirectional DC-DCs

GaN Systems’ New Products, Design Tools and Demos at electronica 2018

GaN Systems’ New Products, Design Tools and Demos at electronica 2018


News Nov 07, 2018 by Paul Shepard
nHPD2 Power Modules Where Innovation Meets Requirements

nHPD2 Power Modules Where Innovation Meets Requirements

This article highlights Hitachi Europe, Ltd. introduction of nHPD2 Power Modules as the first high-voltage IGBT-based power module for traction, etc..


650V Half-Bridge Gate Driver IC with Integrated Bootstrap Diode

650V Half-Bridge Gate Driver IC with Integrated Bootstrap Diode

Gen 3 600V & 1200V “FAST” Silicon Carbide FET series

Gen 3 600V & 1200V “FAST” Silicon Carbide FET series