This article highlights Hitachi Europe, Ltd. introduction of nHPD2 Power Modules as the first high-voltage IGBT-based…
This article highlights Hitachi Europe, Ltd. introduction of nHPD2 Power Modules as the first high-voltage IGBT-based power module for traction, etc..
UnitedSiC announced the launch of its UF3C FAST series of 650V and 1200V high-performance silicon carbide FETs in a…
UnitedSiC announced the launch of its UF3C FAST series of 650V and 1200V high-performance silicon carbide FETs in a standard TO-247-3L package.
In this interview, US correspondent for Bodo's Power, Henning Wriedt, speaks with Graham Maggs, VP Marketing for Europe…
In this interview, US correspondent for Bodo's Power, Henning Wriedt, speaks with Graham Maggs, VP Marketing for Europe at Mouser Electronics,…
Texas Instruments recently announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ…
Texas Instruments recently announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support…
GaN Systems recently announced the details of its participation at the IEEE International Power Electronics and…
GaN Systems recently announced the details of its participation at the IEEE International Power Electronics and Application Conference and…
This article highlights KEMET Multi-Layer Ceramic Chip Capacitors rated for operation up to 200°C, featuring C0G…
This article highlights KEMET Multi-Layer Ceramic Chip Capacitors rated for operation up to 200°C, featuring C0G dielectric and nickel…
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