Exagan to Introduce Three New GaN IC Products at electronica 2018

November 01, 2018 by Paul Shepard

At electronica 2018 during the week of November 12-16 in Munich, gallium nitride (GaN) specialist Exagan is extending its market reach by introducing and demonstrating new high- and low-power solutions based on its G-FET™ family of power transistors and its G-DRIVE™ series of intelligent and fast-switching solutions. These new applications - to be showcased in stand #110 in Hall C3 - leverage GaN technology to boost power efficiency in a wide range of applications including servers and USB chargers.

In addition, during the Automotive Conference, November 12th from 12h00 to 12h30, at the ICM - Internationales Congress Center München will feature a presentation from Exagan's President & CEO, Frederic Dupont, entitled ‘'From evolution to revolution: Disrupting automotive power conversion with GaN.''

Dupont will describe how GaN technology brings significantly smaller, lighter and more cost-effective solutions at the system level and why this innovative technology will play a major role in supporting the transitioning of the automotive industry to an ever-increasing number of electric vehicles (EVs)

Earlier this year, Exagan launched its safe, powerful G-FET™ power transistors and G-DRIVE™ intelligent and fast-switching solution featuring an integrated driver and transistor in a single package. These are designed for easy system implementation in diverse applications, including servers and USB chargers, to accelerate the development and use of fast, intelligent GaN power solutions

Exagan would be delighted to welcome you on their booth located in Hall C3 - Stand 110 to present their latest developments and new products, as well as discuss user applications.