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Denso, Sonnen, and Supermicro Join GaN Systems Presenting at APEC 2019

Denso, Sonnen, and Supermicro Join GaN Systems Presenting at APEC 2019


News Feb 22, 2019 by Scott McMahan
Gallium Oxide Could Have Lower Cost than SiC, NREL Analysis Reveals

Gallium Oxide Could Have Lower Cost than SiC, NREL Analysis Reveals


News Feb 21, 2019 by Paul Shepard
AgileSwitch Opens New Subsibiary in Bangalore India to Address Growth in Asia

AgileSwitch Opens New Subsibiary in Bangalore India to Address Growth in Asia

AgileSwitch India Pvt Ltd was established with a goal to provide Development & Applications Support to customers, particularly in Asia.


Heraeus and Toshiba Join Forces for the Development and Production of Silicon Nitride Ceramic Substrates Used in Hybrid and Electric Vehicles

Heraeus and Toshiba Join Forces for the Development and Production of Silicon Nitride Ceramic Substrates Used in Hybrid and Electric Vehicles

Heraeus Electronics, a leading provider of material solutions for the semiconductor industry and electronic packaging industry and Toshiba…


Switching Performance of 750A/3300V Dual SiC-Modules

Switching Performance of 750A/3300V Dual SiC-Modules

This article focuses on the switching behavior of SiC devices and compares Full SiC and Hybrid SiC with the behavior of a silicon device.


Trench Schottky Rectifier Functioning Benefits and Use Cases

Trench Schottky Rectifier Functioning Benefits and Use Cases

This article is mainly discussing the functioning and the benefits of Trench Schottky rectifiers.


60V/100A N-Channel MOSFET with 1.7mΩ On-Resistance

60V/100A N-Channel MOSFET with 1.7mΩ On-Resistance

Latest Generation IGBT Modules for Efficient, Reliable & Power Dense Systems

Latest Generation IGBT Modules for Efficient, Reliable & Power Dense Systems

This article discusses Dynex' new generation of high-power IGBT modules, covering a 3.3kV to 6.5kV voltage range.


3.0kW Single-Phase Inverter GaN Evaluation Platform

3.0kW Single-Phase Inverter GaN Evaluation Platform

3D Silicon™ Li-ion Battery to Deliver over 900Wh/l and 500 Cycle Life

3D Silicon™ Li-ion Battery to Deliver over 900Wh/l and 500 Cycle Life


News Feb 14, 2019 by Paul Shepard
ROHM Appoints Alessandro Zanarella as New Country Manager for Italy and Israel

ROHM Appoints Alessandro Zanarella as New Country Manager for Italy and Israel

Alessandro Zanarella is the new Country Manager for Italy and Israel of ROHM Semiconductor.


new products Feb 14, 2019 by ROHM
SiC-Based Power Unit and High Power Density Electric Machine for HEVs

SiC-Based Power Unit and High Power Density Electric Machine for HEVs


News Feb 13, 2019 by Paul Shepard
New Method Finds Defects in Power Transistors More Accurately Quickly and Simply

New Method Finds Defects in Power Transistors More Accurately Quickly and Simply

Transistors are needed wherever current flows, and they are an indispensable component of virtually all electronic switches. In the field of power…


STMicroelectronics to Acquire Majority Stake in Silicon Carbide Wafer Manufacturer Norstel AB

STMicroelectronics to Acquire Majority Stake in Silicon Carbide Wafer Manufacturer Norstel AB

STMicroelectronics, a global semiconductor leader serving customers across the spectrum of electronics applications, today announced it has signed…


Infineon Technologies Bipolar Hands Over 100000th Welding Diode to Bosch Rexroth

Infineon Technologies Bipolar Hands Over 100000th Welding Diode to Bosch Rexroth

Infineon Technologies Bipolar has supplied Bosch Rexroth with 10,000 welding diodes annually.


Maximizing Performance with SiC Discretes

Maximizing Performance with SiC Discretes

UnitedSiC has recently expanded its SiC FET product offerings to encompass devices with tailored switching speeds


PowerSphyr and GaN Systems Partner on GaN-based Wireless Power

PowerSphyr and GaN Systems Partner on GaN-based Wireless Power


News Feb 12, 2019 by Scott McMahan
JEDEC Publishes RDS(on) Test Guidelines for GaN HEMT-Based Devices

JEDEC Publishes RDS(on) Test Guidelines for GaN HEMT-Based Devices


News Feb 11, 2019 by Scott McMahan
6A to 20A, 650V AEC-Q101 SiC Schottky Diodes

6A to 20A, 650V AEC-Q101 SiC Schottky Diodes

5A, 30mΩ Typical Ron MOSFET Switch Protects Against ±90V Input Surges

5A, 30mΩ Typical Ron MOSFET Switch Protects Against ±90V Input Surges