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New SCALE-iDriver SiC-MOSFET Gate Driver from Power Integrations Maximizes Efficiency Improves Safety

New SCALE-iDriver SiC-MOSFET Gate Driver from Power Integrations Maximizes Efficiency Improves Safety

Power Integrations, the leader in gate-driver technology for medium- and high-voltage inverter applications, today announced the SIC1182K…


JEDEC Wide Bandgap Power Semiconductor Committee Publishes First Document Test Method for Dynamic Resistance of GaN HEMT

JEDEC Wide Bandgap Power Semiconductor Committee Publishes First Document Test Method for Dynamic Resistance of GaN HEMT

 JEDEC announces the publication of JEP173: Dynamic On-Resistance Test Method Guidelines for GaN HEMT Based Power Conversion Devices


new products Mar 01, 2019 by JEDEC
Power Module Substrate Options Available to Lower Semiconductor Junction Temperatures for Increased Reliability

Power Module Substrate Options Available to Lower Semiconductor Junction Temperatures for Increased Reliability

This article examines changing a power module's substrate as a possible option for lowering its semiconductors junction temperatures without…


Infineon to Showcase Array of Power Management Solutions at APEC

Infineon to Showcase Array of Power Management Solutions at APEC


News Feb 28, 2019 by Paul Shepard
14mm PD GaN Charger at MWC Barcelona 2019

14mm PD GaN Charger at MWC Barcelona 2019


News Feb 28, 2019 by Paul Shepard
Transphorm’s Gen III GaN Platform Earns Automotive Qualification

Transphorm’s Gen III GaN Platform Earns Automotive Qualification


News Feb 28, 2019 by Paul Shepard
8A SiC MOSFET Gate Driver Supports Inverters of Several Hundred kW

8A SiC MOSFET Gate Driver Supports Inverters of Several Hundred kW

EPC Publishes 10th Reliability Report Highlighting GaN Device Testing Beyond AEC-Q101

EPC Publishes 10th Reliability Report Highlighting GaN Device Testing Beyond AEC-Q101


News Feb 26, 2019 by Paul Shepard
Dynamic Characterization Platform for SiC Power MOSFETs and Schottky Diodes

Dynamic Characterization Platform for SiC Power MOSFETs and Schottky Diodes

Xilinx and Infineon Collaborate on Power Solutions for the Zynq UltraScale  MPSoC and RFSoC Families

Xilinx and Infineon Collaborate on Power Solutions for the Zynq UltraScale MPSoC and RFSoC Families

Xilinx Inc. and Infineon Technologies AG are jointly providing scalable power supplies for the Xilinx® Zynq® UltraScale™ + MPSoC and RFSoC…


MACOM and STMicro Expand GaN-on-Si Capacity for 5G Rollout

MACOM and STMicro Expand GaN-on-Si Capacity for 5G Rollout


News Feb 25, 2019 by Scott McMahan
GE Research Awarded $3 Million to Develop High-Voltage SiC Super Junction MOSFET

GE Research Awarded $3 Million to Develop High-Voltage SiC Super Junction MOSFET


News Feb 23, 2019 by Scott McMahan
Denso, Sonnen, and Supermicro Join GaN Systems Presenting at APEC 2019

Denso, Sonnen, and Supermicro Join GaN Systems Presenting at APEC 2019


News Feb 22, 2019 by Scott McMahan
Gallium Oxide Could Have Lower Cost than SiC, NREL Analysis Reveals

Gallium Oxide Could Have Lower Cost than SiC, NREL Analysis Reveals


News Feb 21, 2019 by Paul Shepard
AgileSwitch Opens New Subsibiary in Bangalore India to Address Growth in Asia

AgileSwitch Opens New Subsibiary in Bangalore India to Address Growth in Asia

AgileSwitch India Pvt Ltd was established with a goal to provide Development & Applications Support to customers, particularly in Asia.


Heraeus and Toshiba Join Forces for the Development and Production of Silicon Nitride Ceramic Substrates Used in Hybrid and Electric Vehicles

Heraeus and Toshiba Join Forces for the Development and Production of Silicon Nitride Ceramic Substrates Used in Hybrid and Electric Vehicles

Heraeus Electronics, a leading provider of material solutions for the semiconductor industry and electronic packaging industry and Toshiba…


Switching Performance of 750A/3300V Dual SiC-Modules

Switching Performance of 750A/3300V Dual SiC-Modules

This article focuses on the switching behavior of SiC devices and compares Full SiC and Hybrid SiC with the behavior of a silicon device.


Trench Schottky Rectifier Functioning Benefits and Use Cases

Trench Schottky Rectifier Functioning Benefits and Use Cases

This article is mainly discussing the functioning and the benefits of Trench Schottky rectifiers.


60V/100A N-Channel MOSFET with 1.7mΩ On-Resistance

60V/100A N-Channel MOSFET with 1.7mΩ On-Resistance

Latest Generation IGBT Modules for Efficient, Reliable & Power Dense Systems

Latest Generation IGBT Modules for Efficient, Reliable & Power Dense Systems

This article discusses Dynex' new generation of high-power IGBT modules, covering a 3.3kV to 6.5kV voltage range.