60V/100A N-Channel MOSFET with 1.7mΩ On-Resistance
Vishay Intertechnology, Inc. introduced a new 60V, 100A TrenchFET® Gen IV n-channel power MOSFET in the 6.15mm by 5.15mm PowerPAK® SO-8 single package. Designed to enhance the efficiency of power conversion topologies, the Vishay Siliconix SiR626DP provides 36% lower on-resistance than previous-generation devices, and the company says that it delivers the lowest gate charge and output charge in its class.
Vishay fine-tuned the SiR626DP's improved specifications to minimize conduction and switching losses. The result is increased efficiency.
Applications for the power MOSFET include synchronous rectification in ac-dc topologies; primary- and secondary-side switching in isolated dc-dc topologies for solar micro-inverters as well as power conversion for telecom, servers, and medical equipment; motor drive control in power tools and industrial equipment; and battery switching in battery management modules.
The device combines a maximum on-resistance as low as 1.7mΩ at 10V with ultra-low gate charge of 52nC, output charge of 68nC, and COSS of 992pF. The resulting gate charge times on-resistance and output charge times on-resistance — key figures of merit (FOM) for MOSFETs used in power conversion applications — are 32% and 45% lower, respectively, that previous-generation devices. The MOSFET's COSS is 69% lower.
The MOSFET is 100% RG- and UIS-tested, RoHS-compliant, and halogen-free.
Features
- TrenchFET® Gen IV power MOSFET
- Very low RDS(on) - Qg figure-of-merit (FOM)
- Tuned for the lowest RDS - Qoss FOM
- 100% Rg and UIS tested
Samples of the SiR626DP are available now. Production quantities are available with lead times of 30 weeks subject to market conditions. Pricing for U.S. delivery in 1000-piece quantities is about $1 per piece.
