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Power Integrations Launches 98.5% Efficient High Voltage BLDC Motor Driver IC Family

Power Integrations Launches 98.5% Efficient High Voltage BLDC Motor Driver IC Family

Power Integrations announces the release of its BridgeSwitch™ integrated half-bridge (IHB) motor driver IC family.


Gen 3 600V & 1200V “FAST” Silicon Carbide FET series

Gen 3 600V & 1200V “FAST” Silicon Carbide FET series

UnitedSiC Introduces New UF3C ‘FAST’ Silicon Carbide FET Series

UnitedSiC Introduces New UF3C ‘FAST’ Silicon Carbide FET Series

UnitedSiC announced the launch of its UF3C FAST series of 650V and 1200V high-performance silicon carbide FETs in a standard TO-247-3L package.


TI Announces New Portfolio of Ready-to-Use 600V GaN FET Power Stages

TI Announces New Portfolio of Ready-to-Use 600V GaN FET Power Stages

Texas Instruments recently announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support…


Ready-to-Use, 600-V GaN FET Power Stages Supports up to 10kW

Ready-to-Use, 600-V GaN FET Power Stages Supports up to 10kW

STMicro and Leti Partner to Develop High-Power GaN-on-Si Devices

STMicro and Leti Partner to Develop High-Power GaN-on-Si Devices


News Sep 24, 2018 by Paul Shepard
650V/60A Bottom-Side-Cooled GaN FET for Space, Military and COTS Designs

650V/60A Bottom-Side-Cooled GaN FET for Space, Military and COTS Designs

100V GaN Power Transistor is 30-Times Smaller Than Comparable Silicon

100V GaN Power Transistor is 30-Times Smaller Than Comparable Silicon

A Novel Circuit Topology for Turning a ‘Normally On’ GaN Transistor into ‘Normally Off’

A Novel Circuit Topology for Turning a ‘Normally On’ GaN Transistor into ‘Normally Off’

This article discusses how D-mode GaN transistors make themselves excellent building blocks for the next generation power conversion systems.


eGaN® FET-Based Synchronous Rectification

eGaN® FET-Based Synchronous Rectification

This article covers the similarities and differences of Si MOSFETS and eGan FETS that function as a “body diode” as well as their advantages…


High-Power SiC BJTs among Finalists in NASA iTech Challenge

High-Power SiC BJTs among Finalists in NASA iTech Challenge


News Jun 19, 2018 by Paul Shepard
Off-Line Converters with Rugged 800V Embedded FET for 5-30V Power Supplies

Off-Line Converters with Rugged 800V Embedded FET for 5-30V Power Supplies

GaN FET Driver Delivers Fast Switching to Solid-State LiDAR Systems

GaN FET Driver Delivers Fast Switching to Solid-State LiDAR Systems

Enhancement-Mode Vertical Gallium-Oxide Transistor with Breakdown >1kV

Enhancement-Mode Vertical Gallium-Oxide Transistor with Breakdown >1kV


News Jun 07, 2018 by Paul Shepard
High-Power Semiconductor Probing System

High-Power Semiconductor Probing System


News Jun 04, 2018 by Paul Shepard
High-Voltage SiC Inverter Enables Stabilization of Medium-Voltage Grids

High-Voltage SiC Inverter Enables Stabilization of Medium-Voltage Grids


News May 31, 2018 by Paul Shepard
Ultra-High Voltage Foundry Process for Industrial and Power Applications

Ultra-High Voltage Foundry Process for Industrial and Power Applications


News May 29, 2018 by Paul Shepard
IGBT Driver Module Enables High Power Systems Design with Reduced Design Time and Cost

IGBT Driver Module Enables High Power Systems Design with Reduced Design Time and Cost

IXYS Corporation introduces new IXIDM1403 driver module to serve the market with IGBT driver parts that enable a short design cycle and the lowest…


PowerBase Pushing for High-Voltage GaN Power Devices

PowerBase Pushing for High-Voltage GaN Power Devices


News May 05, 2018 by Paul Shepard
350V GaN Power Transistor is 20-Times Smaller Than Comparable Silicon

350V GaN Power Transistor is 20-Times Smaller Than Comparable Silicon