EEPower

Latest Power FETs Articles

Categories

100V GaN Power Transistor is 30-Times Smaller Than Comparable Silicon

100V GaN Power Transistor is 30-Times Smaller Than Comparable Silicon

A Novel Circuit Topology for Turning a ‘Normally On’ GaN Transistor into ‘Normally Off’

A Novel Circuit Topology for Turning a ‘Normally On’ GaN Transistor into ‘Normally Off’

This article discusses how D-mode GaN transistors make themselves excellent building blocks for the next generation power conversion systems.


eGaN® FET-Based Synchronous Rectification

eGaN® FET-Based Synchronous Rectification

This article covers the similarities and differences of Si MOSFETS and eGan FETS that function as a “body diode” as well as their advantages…


High-Power SiC BJTs among Finalists in NASA iTech Challenge

High-Power SiC BJTs among Finalists in NASA iTech Challenge


News Jun 19, 2018 by Paul Shepard
Off-Line Converters with Rugged 800V Embedded FET for 5-30V Power Supplies

Off-Line Converters with Rugged 800V Embedded FET for 5-30V Power Supplies

GaN FET Driver Delivers Fast Switching to Solid-State LiDAR Systems

GaN FET Driver Delivers Fast Switching to Solid-State LiDAR Systems

Enhancement-Mode Vertical Gallium-Oxide Transistor with Breakdown >1kV

Enhancement-Mode Vertical Gallium-Oxide Transistor with Breakdown >1kV


News Jun 07, 2018 by Paul Shepard
High-Power Semiconductor Probing System

High-Power Semiconductor Probing System


News Jun 04, 2018 by Paul Shepard
High-Voltage SiC Inverter Enables Stabilization of Medium-Voltage Grids

High-Voltage SiC Inverter Enables Stabilization of Medium-Voltage Grids


News May 31, 2018 by Paul Shepard
Ultra-High Voltage Foundry Process for Industrial and Power Applications

Ultra-High Voltage Foundry Process for Industrial and Power Applications


News May 29, 2018 by Paul Shepard
IGBT Driver Module Enables High Power Systems Design with Reduced Design Time and Cost

IGBT Driver Module Enables High Power Systems Design with Reduced Design Time and Cost

IXYS Corporation introduces new IXIDM1403 driver module to serve the market with IGBT driver parts that enable a short design cycle and the lowest…


PowerBase Pushing for High-Voltage GaN Power Devices

PowerBase Pushing for High-Voltage GaN Power Devices


News May 05, 2018 by Paul Shepard
350V GaN Power Transistor is 20-Times Smaller Than Comparable Silicon

350V GaN Power Transistor is 20-Times Smaller Than Comparable Silicon

50-Amp High-Voltage Vertical GaN Power Semiconductors

50-Amp High-Voltage Vertical GaN Power Semiconductors

High-Voltage GaAs Power Diode Production begins in Dresden

High-Voltage GaAs Power Diode Production begins in Dresden


News Apr 11, 2018 by Paul Shepard
Fixed-Frequency PWM Controller and Integrated Power FET

Fixed-Frequency PWM Controller and Integrated Power FET

High-Power GaN Converter IMS Evaluation Platform

High-Power GaN Converter IMS Evaluation Platform

N-channel FET driver ICs Suitable for Rapid-Charging Designs

N-channel FET driver ICs Suitable for Rapid-Charging Designs

1.8kW RF Device is Industry’s Most Powerful GaN-on-SiC Transistor

1.8kW RF Device is Industry’s Most Powerful GaN-on-SiC Transistor

Record-Setting 100 V/120A GaN Power Transistor

Record-Setting 100 V/120A GaN Power Transistor