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Achieving 99% PFC Efficiency with ICERGi Gate Drives and Digital Control Technologies

Achieving 99% PFC Efficiency with ICERGi Gate Drives and Digital Control Technologies

This article demonstrates low-cost, extremely-high-efficiency, and Si-based implementation of PFC stages enabled by innovative ICERGi gate drive…


Robust Margin Expansion in ON Semiconductor’s Q2 2018 Results

Robust Margin Expansion in ON Semiconductor’s Q2 2018 Results


News Jul 29, 2018 by Paul Shepard
Automotive 3-Phase MOSFET Gate Driver Intelligent Power Device

Automotive 3-Phase MOSFET Gate Driver Intelligent Power Device

High Isolation Dual Regulated Output DC-DC Converter QAU242D2G Specialized for IGBT Drivers

High Isolation Dual Regulated Output DC-DC Converter QAU242D2G Specialized for IGBT Drivers

MORNSUN launched a high isolated dual regulated output DC/DC converter module QAU242D2G (patent-protection) specialized for IGBT driver, to meet…


new products Jul 25, 2018 by MORNSUN
Alpha and Omega Semiconductor Announces Type-C Power Delivery Input Protection Switch with True Reverse Blocking

Alpha and Omega Semiconductor Announces Type-C Power Delivery Input Protection Switch with True Reverse Blocking

Alpha and Omega Semiconductor Limited, a designer, developer and global supplier of a broad range of power semiconductors and power…


Inevitability of Near Chip-Scale SMD Packaging for Power GaN and SiC

Inevitability of Near Chip-Scale SMD Packaging for Power GaN and SiC

This article is a Q&A aiming to provide insight into the benefits of WBG near chip-scale package capability and its ultimate form, the μMaxPak…


27.1 Percent Efficient Perovskite-Silicon Tandem Cell Beats Silicon PVs

27.1 Percent Efficient Perovskite-Silicon Tandem Cell Beats Silicon PVs


News Jul 24, 2018 by Paul Shepard
Energy Harvesting PMIC and BLE Solution

Energy Harvesting PMIC and BLE Solution

Self-Calibrating Energy Metering IC Simplifies Embedded Electricity Measurement

Self-Calibrating Energy Metering IC Simplifies Embedded Electricity Measurement

Gate Drive Optocouplers for GaN Power Devices

Gate Drive Optocouplers for GaN Power Devices

This article discusses Gallium Nitride Technology and wide variety of designs of different competing companies.


NexGen to make Vertical GaN FETs with AIXTRON MOCVD Technology

NexGen to make Vertical GaN FETs with AIXTRON MOCVD Technology


News Jul 21, 2018 by Paul Shepard
Platform for Automotive Traction Inverters can use Si or SiC Devices

Platform for Automotive Traction Inverters can use Si or SiC Devices


News Jul 20, 2018 by Paul Shepard
Reliability Methods and Standards for WBG Device Production Testing

Reliability Methods and Standards for WBG Device Production Testing


News Jul 19, 2018 by Paul Shepard
Measure Power from 0V to 32V with 16-Bit, 2-Channel Power Monitoring IC

Measure Power from 0V to 32V with 16-Bit, 2-Channel Power Monitoring IC

Defect-Free Boron-Arsenide for More Efficient Thermal Management

Defect-Free Boron-Arsenide for More Efficient Thermal Management


News Jul 18, 2018 by Paul Shepard
Isolated & Regulated Dual-Output DC-DC for IGBT Drivers

Isolated & Regulated Dual-Output DC-DC for IGBT Drivers

Small-Outline Synchronous Rectification MOSFET Driver for Off-Line Power Adapters from Diodes Incorporated

Small-Outline Synchronous Rectification MOSFET Driver for Off-Line Power Adapters from Diodes Incorporated

Diodes Incorporated today announced the APR346 Secondary Side Synchronous Rectification MOSFET Driver.


x-GaN 2.0: The Destination FiT10 is Demonstrably Exceeded

x-GaN 2.0: The Destination FiT10 is Demonstrably Exceeded

This article highlights Panasonic X-GaNTM transistors that is called as HD-GiT that aimed for power converters application in the ~100 W to ~5-6 kW…


Small-Outline Synchronous Rectification MOSFET Driver

Small-Outline Synchronous Rectification MOSFET Driver

Modules Based on IGBT M7 for Real Chip-Level Multi Sourcing

Modules Based on IGBT M7 for Real Chip-Level Multi Sourcing


News Jul 17, 2018 by Paul Shepard