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Introduction of a Wireless Multi-Mode Demonstration System

Introduction of a Wireless Multi-Mode Demonstration System

This article introduces Efficient Power Conversion Corporation's EPC9121, a 10W multi-mode wireless power charging kit for power charging…


new products Aug 09, 2016 by EPC
Buck/Boost Controller with Integrated Buck FET

Buck/Boost Controller with Integrated Buck FET

LDOs in Breakthrough Bumpless Chip-Scale Package

LDOs in Breakthrough Bumpless Chip-Scale Package

High-Speed Multi-Channel PLC Input Isolators

High-Speed Multi-Channel PLC Input Isolators

1500V Super-Junction FET in TO-220FP Wide-Creepage Package

1500V Super-Junction FET in TO-220FP Wide-Creepage Package

Process Qualified for AEC-Q100 Grade-0 Automotive PMICs

Process Qualified for AEC-Q100 Grade-0 Automotive PMICs

Anti-Surge Thick Film Chip Resistors

Anti-Surge Thick Film Chip Resistors

Increasing Reliability Data for GaN Devices

Increasing Reliability Data for GaN Devices

DrMOS Modules Optimized for High-Density Designs

DrMOS Modules Optimized for High-Density Designs

Gate Drivers for IGBTs and SiC MOSFETs

Gate Drivers for IGBTs and SiC MOSFETs

High-Reliability SCALE2 Driver Technology to 1200 V Applications

High-Reliability SCALE2 Driver Technology to 1200 V Applications

Power Integrations announced a family of galvanically isolated single-channel gate driver ICs ranging in output current from 2.5 A to 8 A


1200V SiC MOSFET in SOT227 MiniBLOC

1200V SiC MOSFET in SOT227 MiniBLOC

Illumination LED Driver IC with Single-Wire Input

Illumination LED Driver IC with Single-Wire Input

Compact H-Bridge Driver IC for Low-Voltage 25V Drives

Compact H-Bridge Driver IC for Low-Voltage 25V Drives

Toshiba Electronics Europe has announced an addition to its range of H-bridge [1] driver ICs for brushed DC and stepper motors


SiC-based Power Module includes BJTs and Drivers

SiC-based Power Module includes BJTs and Drivers

Fast GaN FET Driver Unveiled Utilizing UltraCMOS Technology

Fast GaN FET Driver Unveiled Utilizing UltraCMOS Technology

Peregrine Semiconductor Corp. introduces the word’s fastest GaN FET driver, the UltraCMOS® PE29100


Radiation-hardened Power-management Device Integrates Comprehensive Functionality in an Ultra-small Form Factor

Radiation-hardened Power-management Device Integrates Comprehensive Functionality in an Ultra-small Form Factor

Texas Instruments (TI) (NASDAQ:TXN) today introduced the industry’s first double-data-rate (DDR) memory linear regulator for space applications.


80V Half-Bridge 33MHz GaN FET Driver

80V Half-Bridge 33MHz GaN FET Driver

Secondary-Side MOSFET Driver for 5V to 12V Conversion

Secondary-Side MOSFET Driver for 5V to 12V Conversion

30V / 1.5A Photorelays for Semiconductor Testers

30V / 1.5A Photorelays for Semiconductor Testers