Texas Instruments recently announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ…
Texas Instruments recently announced a new portfolio of ready-to-use, 600-V gallium nitride (GaN), 50-mΩ and 70-mΩ power stages to support…
GaN Systems recently announced the details of its participation at the IEEE International Power Electronics and…
GaN Systems recently announced the details of its participation at the IEEE International Power Electronics and Application Conference and…
This article highlights KEMET Multi-Layer Ceramic Chip Capacitors rated for operation up to 200°C, featuring C0G…
This article highlights KEMET Multi-Layer Ceramic Chip Capacitors rated for operation up to 200°C, featuring C0G dielectric and nickel…
UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, announces its Generation 3 1200 V and 650 V…
UnitedSiC, a manufacturer of silicon carbide (SiC) power semiconductors, announces its Generation 3 1200 V and 650 V silicon carbide JFETs,…
STMicroelectronics and Leti today announced their cooperation to industrialize GaN (gallium nitride)-on-silicon…
STMicroelectronics and Leti today announced their cooperation to industrialize GaN (gallium nitride)-on-silicon technologies for power switching…