EEPower

Latest Wide Bandgap Articles

Categories

Optimized Inverter Design by IPMs and SiC-SBDs

Optimized Inverter Design by IPMs and SiC-SBDs

This article highlights Roland R. Ackermann discussion about Inverter Design by IPMs and SiC-SBDs presented at PCIM Europe 2019 press conference.


Atom Achieves UL 1557 Recognition for Proprietary SiC Power Modules

Atom Achieves UL 1557 Recognition for Proprietary SiC Power Modules


News Jun 05, 2019 by Paul Shepard
Integra Technologies Wins Air Force Contract to Accelerate GaN/SiC Readiness

Integra Technologies Wins Air Force Contract to Accelerate GaN/SiC Readiness


News Jun 05, 2019 by Scott McMahan
GaN-on-SiC Transistor for 2.45GHz RF Surpasses Efficiency of Most Magnetrons

GaN-on-SiC Transistor for 2.45GHz RF Surpasses Efficiency of Most Magnetrons


News Jun 05, 2019 by Scott McMahan
Silicon Carbide SiC Products for High-Voltage Reliable Power Electronics

Silicon Carbide SiC Products for High-Voltage Reliable Power Electronics

This article highlights Microchip’s 700V SiC MOSFETs, and 700V and 1200V SiC Schottky Barrier Diodes (SBDs) join its existing portfolio of SiC…


EPC Offers GaN Devices in Wafer Form

EPC Offers GaN Devices in Wafer Form


News Jun 04, 2019 by Scott McMahan
Integrated GaAs Tech Enables Single Chip GaAs Solutions For 5G and mmWave

Integrated GaAs Tech Enables Single Chip GaAs Solutions For 5G and mmWave

Wentai’s New 1.6kW PC Gaming PSU Uses Transphorm’s Gen III GaN FETs

Wentai’s New 1.6kW PC Gaming PSU Uses Transphorm’s Gen III GaN FETs


News May 29, 2019 by Scott McMahan
Fifth Annual GaN Systems Cup China Power Supply Society Design Competition is Underway

Fifth Annual GaN Systems Cup China Power Supply Society Design Competition is Underway

This article highlights GaN Systems fifth annual GaN Systems Cup China power supply society design competition with teams from leading universities…


new products May 29, 2019 by GaN Systems
MCUs Optimized for GaN- and SiC-Based Digital Power Designs

MCUs Optimized for GaN- and SiC-Based Digital Power Designs


News May 28, 2019 by Paul Shepard
Radiation Tolerant Low-Side GaN FET Driver Evaluation Board

Radiation Tolerant Low-Side GaN FET Driver Evaluation Board


News May 24, 2019 by Paul Shepard
PowerAmerica Updates Wide Bandgap Technology Roadmap

PowerAmerica Updates Wide Bandgap Technology Roadmap


News May 23, 2019 by Paul Shepard
Toyoda Gosei Develops Single-Chip 100A Vertical GaN FET

Toyoda Gosei Develops Single-Chip 100A Vertical GaN FET


News May 23, 2019 by Scott McMahan
10W GaN-on-SiC MMIC K/Ka-Band High Power Amplifier

10W GaN-on-SiC MMIC K/Ka-Band High Power Amplifier

SiC-Based 7.4kW/11kW/22kW Onboard Battery Charger for EVs and HEVs

SiC-Based 7.4kW/11kW/22kW Onboard Battery Charger for EVs and HEVs

Gate Drivers for SiC-MOSFET/IGBT Power Modules and Their Advantages

Gate Drivers for SiC-MOSFET/IGBT Power Modules and Their Advantages

This article highlights Tamura Corporation Gate Drivers module which is the 2DMB series for SiCMOSFET/IGBT power modules that contains DC/DC…


Optimizing Performance with GaN Ready Magnetics

Optimizing Performance with GaN Ready Magnetics


News May 16, 2019 by Paul Shepard
Accelerating Time-to-Market for High-Power Designs and Wide Bandgap Devices

Accelerating Time-to-Market for High-Power Designs and Wide Bandgap Devices

Cree Selected as Silicon Carbide Partner for the Volkswagen Group FAST Program

Cree Selected as Silicon Carbide Partner for the Volkswagen Group FAST Program

Cree, Inc. has been selected as the exclusive silicon carbide partner for the Volkswagen Group’s “Future Automotive Supply Tracks” Initiative…


new products May 14, 2019 by Cree
Soitec’s EpiGaN Acquisition Expands GaN Substrate Portfolio

Soitec’s EpiGaN Acquisition Expands GaN Substrate Portfolio


News May 13, 2019 by Scott McMahan