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Highly Flexible Gate-Driver System from Power Integrations Targets New 17 kV to 45 kV IGBT and SiC Dual Power Modules

Highly Flexible Gate-Driver System from Power Integrations Targets New 17 kV to 45 kV IGBT and SiC Dual Power Modules

This article highlights Power Integrations SCALE-iFlex gate-driver system for IGBT, hybrid and SiC MOSFET power modules with blocking voltages…


High Volume ALD Solution for GaN Power Device Passivation

High Volume ALD Solution for GaN Power Device Passivation


News Jun 25, 2019 by Scott McMahan
Transphorm Strengthens 900 V GaN Portfolio with Second FET

Transphorm Strengthens 900 V GaN Portfolio with Second FET

This article highlights Transphorm Inc. introduction of its second 900 V FET, the Gen III TP90H050WS, enhancing the industry’s only 900 V GaN…


new products Jun 25, 2019 by Transphorm
Sanan IC Expands Portfolio with 650V 150mm GaN-on-Silicon Process

Sanan IC Expands Portfolio with 650V 150mm GaN-on-Silicon Process


News Jun 24, 2019 by Paul Shepard
SiC Module enables >98% Efficient 300kW Three-Phase Inverter Reference Design

SiC Module enables >98% Efficient 300kW Three-Phase Inverter Reference Design

Compound Semiconductor Centre Participates in UK SiC Supply Chain Project

Compound Semiconductor Centre Participates in UK SiC Supply Chain Project


News Jun 22, 2019 by Scott McMahan
10kW/10kVA Three-Level, Three-Phase SiC AC-DC Reference Design

10kW/10kVA Three-Level, Three-Phase SiC AC-DC Reference Design


News Jun 21, 2019 by Paul Shepard
UnitedSiC adds 4-lead Kelvin 1200V/150mΩ SiC FET

UnitedSiC adds 4-lead Kelvin 1200V/150mΩ SiC FET

UnitedSiC adds new 4-lead Kelvin device to UF3C FAST FET series

UnitedSiC adds new 4-lead Kelvin device to UF3C FAST FET series

This article highlights UnitedSiC UF3C120150K4S 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin Sense discrete package option.


GaN Makes a Frontal Attack on Silicon Power MOSFETs

GaN Makes a Frontal Attack on Silicon Power MOSFETs

This article highlights Efficient Power Conversion eGaN FETs improvements in size and performance compared with equivalently Silicon power MOSFETs.


Accelerate Time-to-Market for SiC- and GaN-Based High-Power Designs

Accelerate Time-to-Market for SiC- and GaN-Based High-Power Designs


News Jun 19, 2019 by Paul Shepard
Metal Composite Power Inductors for HV Applications including GaN-Based Converters

Metal Composite Power Inductors for HV Applications including GaN-Based Converters

61W GaN-based USB-C Wall Charger is 50% Smaller than Standard Chargers

61W GaN-based USB-C Wall Charger is 50% Smaller than Standard Chargers


News Jun 19, 2019 by Scott McMahan
600-V 150mΩ 6-A Single-Channel GaN Power Stage

600-V 150mΩ 6-A Single-Channel GaN Power Stage

Cissoid and IEE/CAS Partner on SiC Power Module Development for EVs

Cissoid and IEE/CAS Partner on SiC Power Module Development for EVs


News Jun 14, 2019 by Scott McMahan
1200V / 150A SiC-MOSFET Module Features High Reliability and Low Losses

1200V / 150A SiC-MOSFET Module Features High Reliability and Low Losses

Accelerated Development Kits Unlock the Full Potential of SiC MOSFET Modules

Accelerated Development Kits Unlock the Full Potential of SiC MOSFET Modules


News Jun 13, 2019 by Paul Shepard
AMR-Based Current Sensors Suited for SiC- and GaN-based Applications

AMR-Based Current Sensors Suited for SiC- and GaN-based Applications

GaN Systems Shows How GaN is Revolutionizing Wireless Charging

GaN Systems Shows How GaN is Revolutionizing Wireless Charging


News Jun 12, 2019 by Paul Shepard
Unlock the Full Potential of SiC MOSFET Modules

Unlock the Full Potential of SiC MOSFET Modules

This article highlights AgileSwitch Augmented Switching Accelerated Development Kit or ASDAK for power electronics engineers working with SiC…