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UnitedSiC adds 4-lead Kelvin 1200V/150mΩ SiC FET

UnitedSiC adds 4-lead Kelvin 1200V/150mΩ SiC FET

UnitedSiC adds new 4-lead Kelvin device to UF3C FAST FET series

UnitedSiC adds new 4-lead Kelvin device to UF3C FAST FET series

This article highlights UnitedSiC UF3C120150K4S 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin Sense discrete package option.


GaN Makes a Frontal Attack on Silicon Power MOSFETs

GaN Makes a Frontal Attack on Silicon Power MOSFETs

This article highlights Efficient Power Conversion eGaN FETs improvements in size and performance compared with equivalently Silicon power MOSFETs.


Accelerate Time-to-Market for SiC- and GaN-Based High-Power Designs

Accelerate Time-to-Market for SiC- and GaN-Based High-Power Designs


News Jun 19, 2019 by Paul Shepard
Metal Composite Power Inductors for HV Applications including GaN-Based Converters

Metal Composite Power Inductors for HV Applications including GaN-Based Converters

61W GaN-based USB-C Wall Charger is 50% Smaller than Standard Chargers

61W GaN-based USB-C Wall Charger is 50% Smaller than Standard Chargers


News Jun 19, 2019 by Scott McMahan
600-V 150mΩ 6-A Single-Channel GaN Power Stage

600-V 150mΩ 6-A Single-Channel GaN Power Stage

Cissoid and IEE/CAS Partner on SiC Power Module Development for EVs

Cissoid and IEE/CAS Partner on SiC Power Module Development for EVs


News Jun 14, 2019 by Scott McMahan
1200V / 150A SiC-MOSFET Module Features High Reliability and Low Losses

1200V / 150A SiC-MOSFET Module Features High Reliability and Low Losses

Accelerated Development Kits Unlock the Full Potential of SiC MOSFET Modules

Accelerated Development Kits Unlock the Full Potential of SiC MOSFET Modules


News Jun 13, 2019 by Paul Shepard
AMR-Based Current Sensors Suited for SiC- and GaN-based Applications

AMR-Based Current Sensors Suited for SiC- and GaN-based Applications

GaN Systems Shows How GaN is Revolutionizing Wireless Charging

GaN Systems Shows How GaN is Revolutionizing Wireless Charging


News Jun 12, 2019 by Paul Shepard
Unlock the Full Potential of SiC MOSFET Modules

Unlock the Full Potential of SiC MOSFET Modules

This article highlights AgileSwitch Augmented Switching Accelerated Development Kit or ASDAK for power electronics engineers working with SiC…


Optimized Inverter Design by IPMs and SiC-SBDs

Optimized Inverter Design by IPMs and SiC-SBDs

This article highlights Roland R. Ackermann discussion about Inverter Design by IPMs and SiC-SBDs presented at PCIM Europe 2019 press conference.


Atom Achieves UL 1557 Recognition for Proprietary SiC Power Modules

Atom Achieves UL 1557 Recognition for Proprietary SiC Power Modules


News Jun 05, 2019 by Paul Shepard
Integra Technologies Wins Air Force Contract to Accelerate GaN/SiC Readiness

Integra Technologies Wins Air Force Contract to Accelerate GaN/SiC Readiness


News Jun 05, 2019 by Scott McMahan
GaN-on-SiC Transistor for 2.45GHz RF Surpasses Efficiency of Most Magnetrons

GaN-on-SiC Transistor for 2.45GHz RF Surpasses Efficiency of Most Magnetrons


News Jun 05, 2019 by Scott McMahan
Silicon Carbide SiC Products for High-Voltage Reliable Power Electronics

Silicon Carbide SiC Products for High-Voltage Reliable Power Electronics

This article highlights Microchip’s 700V SiC MOSFETs, and 700V and 1200V SiC Schottky Barrier Diodes (SBDs) join its existing portfolio of SiC…


EPC Offers GaN Devices in Wafer Form

EPC Offers GaN Devices in Wafer Form


News Jun 04, 2019 by Scott McMahan
Integrated GaAs Tech Enables Single Chip GaAs Solutions For 5G and mmWave

Integrated GaAs Tech Enables Single Chip GaAs Solutions For 5G and mmWave