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Isolated Gate Drivers with Integrated Sensing for IGBTs and SiC MOSFETs

Isolated Gate Drivers with Integrated Sensing for IGBTs and SiC MOSFETs

This article highlights Texas Instruments UCC21710-Q1, UCC21732-Q1 and UCC21750 gate drivers that provide levels of monitoring and protection for…


200kW SiC Inverter Evaluation System

200kW SiC Inverter Evaluation System

This article highlights Pre-Switch, Inc. CleanWave 200kW SiC automotive inverter evaluation system for soft switching architecture and platform.


new products Jul 03, 2019 by Pre-Switch
3.6kW Totem Pole PFC with SIC MOSFETs and Inrush Current Limiter – Reference Design

3.6kW Totem Pole PFC with SIC MOSFETs and Inrush Current Limiter – Reference Design


News Jun 27, 2019 by Paul Shepard
Gate-Driver System Targets 1.7kV to 4.5kV IGBT and SiC Dual Power Modules

Gate-Driver System Targets 1.7kV to 4.5kV IGBT and SiC Dual Power Modules

900V GaN FETs Support 8kW in Typical Half-Bridge Configuration

900V GaN FETs Support 8kW in Typical Half-Bridge Configuration

“Germanium-on-Nothing” Creates Less-Expensive GaAs Thin-Film Solar Cells

“Germanium-on-Nothing” Creates Less-Expensive GaAs Thin-Film Solar Cells


News Jun 26, 2019 by Paul Shepard
Highly Flexible Gate-Driver System from Power Integrations Targets New 17 kV to 45 kV IGBT and SiC Dual Power Modules

Highly Flexible Gate-Driver System from Power Integrations Targets New 17 kV to 45 kV IGBT and SiC Dual Power Modules

This article highlights Power Integrations SCALE-iFlex gate-driver system for IGBT, hybrid and SiC MOSFET power modules with blocking voltages…


High Volume ALD Solution for GaN Power Device Passivation

High Volume ALD Solution for GaN Power Device Passivation


News Jun 25, 2019 by Scott McMahan
Transphorm Strengthens 900 V GaN Portfolio with Second FET

Transphorm Strengthens 900 V GaN Portfolio with Second FET

This article highlights Transphorm Inc. introduction of its second 900 V FET, the Gen III TP90H050WS, enhancing the industry’s only 900 V GaN…


new products Jun 25, 2019 by Transphorm
Sanan IC Expands Portfolio with 650V 150mm GaN-on-Silicon Process

Sanan IC Expands Portfolio with 650V 150mm GaN-on-Silicon Process


News Jun 24, 2019 by Paul Shepard
SiC Module enables >98% Efficient 300kW Three-Phase Inverter Reference Design

SiC Module enables >98% Efficient 300kW Three-Phase Inverter Reference Design

Compound Semiconductor Centre Participates in UK SiC Supply Chain Project

Compound Semiconductor Centre Participates in UK SiC Supply Chain Project


News Jun 22, 2019 by Scott McMahan
10kW/10kVA Three-Level, Three-Phase SiC AC-DC Reference Design

10kW/10kVA Three-Level, Three-Phase SiC AC-DC Reference Design


News Jun 21, 2019 by Paul Shepard
UnitedSiC adds 4-lead Kelvin 1200V/150mΩ SiC FET

UnitedSiC adds 4-lead Kelvin 1200V/150mΩ SiC FET

UnitedSiC adds new 4-lead Kelvin device to UF3C FAST FET series

UnitedSiC adds new 4-lead Kelvin device to UF3C FAST FET series

This article highlights UnitedSiC UF3C120150K4S 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin Sense discrete package option.


GaN Makes a Frontal Attack on Silicon Power MOSFETs

GaN Makes a Frontal Attack on Silicon Power MOSFETs

This article highlights Efficient Power Conversion eGaN FETs improvements in size and performance compared with equivalently Silicon power MOSFETs.


Accelerate Time-to-Market for SiC- and GaN-Based High-Power Designs

Accelerate Time-to-Market for SiC- and GaN-Based High-Power Designs


News Jun 19, 2019 by Paul Shepard
Metal Composite Power Inductors for HV Applications including GaN-Based Converters

Metal Composite Power Inductors for HV Applications including GaN-Based Converters

61W GaN-based USB-C Wall Charger is 50% Smaller than Standard Chargers

61W GaN-based USB-C Wall Charger is 50% Smaller than Standard Chargers


News Jun 19, 2019 by Scott McMahan
600-V 150mΩ 6-A Single-Channel GaN Power Stage

600-V 150mΩ 6-A Single-Channel GaN Power Stage