This article highlights Texas Instruments UCC21710-Q1, UCC21732-Q1 and UCC21750 gate drivers that provide levels of monitoring and protection for…
This article highlights Texas Instruments UCC21710-Q1, UCC21732-Q1 and UCC21750 gate drivers that provide levels of monitoring and protection for…
This article highlights Pre-Switch, Inc. CleanWave 200kW SiC automotive inverter evaluation system for soft switching…
This article highlights Pre-Switch, Inc. CleanWave 200kW SiC automotive inverter evaluation system for soft switching architecture and platform.
This article highlights Power Integrations SCALE-iFlex gate-driver system for IGBT, hybrid and SiC MOSFET power modules…
This article highlights Power Integrations SCALE-iFlex gate-driver system for IGBT, hybrid and SiC MOSFET power modules with blocking voltages…
This article highlights Transphorm Inc. introduction of its second 900 V FET, the Gen III TP90H050WS, enhancing the…
This article highlights Transphorm Inc. introduction of its second 900 V FET, the Gen III TP90H050WS, enhancing the industry’s only 900 V GaN…
This article highlights UnitedSiC UF3C120150K4S 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin…
This article highlights UnitedSiC UF3C120150K4S 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin Sense discrete package option.
This article highlights Efficient Power Conversion eGaN FETs improvements in size and performance compared with…
This article highlights Efficient Power Conversion eGaN FETs improvements in size and performance compared with equivalently Silicon power MOSFETs.