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HEV-EV Semiconductor Technology Outlook What Role will SiC and GaN Play

HEV-EV Semiconductor Technology Outlook What Role will SiC and GaN Play

Strategy Analytics recently released their report titled HEV-EV Semiconductor Technology Outlook: What Role will SiC and GaN Play?

new products Jul 15, 2019 by Asif Anwar
SiC Technology on Track to Power Formula E Racing Cars

SiC Technology on Track to Power Formula E Racing Cars

Journalists from all over Europe joined ROHM Semiconductor to enjoy the Formula E Race in Monaco this year. An eventful weekend with interesting…

tech insights Jul 12, 2019 by Holger Moscheik
Ascatron Obtains €3.5 Million Funding for SiC Product Development

Ascatron Obtains €3.5 Million Funding for SiC Product Development

News Jul 10, 2019 by Scott McMahan
1200V, 450A Half-Bridge Module Maximizes the Benefits of SiC

1200V, 450A Half-Bridge Module Maximizes the Benefits of SiC

new products Jul 08, 2019 by Paul Shepard
Isolated Gate Drivers with Integrated Sensing for IGBTs and SiC MOSFETs

Isolated Gate Drivers with Integrated Sensing for IGBTs and SiC MOSFETs

This article highlights Texas Instruments UCC21710-Q1, UCC21732-Q1 and UCC21750 gate drivers that provide levels of monitoring and protection for…

new products Jul 03, 2019 by Texas Instruments
200kW SiC Inverter Evaluation System

200kW SiC Inverter Evaluation System

This article highlights Pre-Switch, Inc. CleanWave 200kW SiC automotive inverter evaluation system for soft switching architecture and platform.

new products Jul 03, 2019 by Pre-Switch
3.6kW Totem Pole PFC with SIC MOSFETs and Inrush Current Limiter – Reference Design

3.6kW Totem Pole PFC with SIC MOSFETs and Inrush Current Limiter – Reference Design

News Jun 27, 2019 by Paul Shepard
Gate-Driver System Targets 1.7kV to 4.5kV IGBT and SiC Dual Power Modules

Gate-Driver System Targets 1.7kV to 4.5kV IGBT and SiC Dual Power Modules

new products Jun 27, 2019 by Scott McMahan
900V GaN FETs Support 8kW in Typical Half-Bridge Configuration

900V GaN FETs Support 8kW in Typical Half-Bridge Configuration

new products Jun 26, 2019 by Scott McMahan
“Germanium-on-Nothing” Creates Less-Expensive GaAs Thin-Film Solar Cells

“Germanium-on-Nothing” Creates Less-Expensive GaAs Thin-Film Solar Cells

News Jun 26, 2019 by Paul Shepard
Highly Flexible Gate-Driver System from Power Integrations Targets New 17 kV to 45 kV IGBT and SiC Dual Power Modules

Highly Flexible Gate-Driver System from Power Integrations Targets New 17 kV to 45 kV IGBT and SiC Dual Power Modules

This article highlights Power Integrations SCALE-iFlex gate-driver system for IGBT, hybrid and SiC MOSFET power modules with blocking voltages…

new products Jun 26, 2019 by Power Integrations
High Volume ALD Solution for GaN Power Device Passivation

High Volume ALD Solution for GaN Power Device Passivation

News Jun 25, 2019 by Scott McMahan
Transphorm Strengthens 900 V GaN Portfolio with Second FET

Transphorm Strengthens 900 V GaN Portfolio with Second FET

This article highlights Transphorm Inc. introduction of its second 900 V FET, the Gen III TP90H050WS, enhancing the industry’s only 900 V GaN…

new products Jun 25, 2019 by Transphorm
Sanan IC Expands Portfolio with 650V 150mm GaN-on-Silicon Process

Sanan IC Expands Portfolio with 650V 150mm GaN-on-Silicon Process

News Jun 24, 2019 by Paul Shepard
SiC Module enables >98% Efficient 300kW Three-Phase Inverter Reference Design

SiC Module enables >98% Efficient 300kW Three-Phase Inverter Reference Design

new products Jun 24, 2019 by Paul Shepard
Compound Semiconductor Centre Participates in UK SiC Supply Chain Project

Compound Semiconductor Centre Participates in UK SiC Supply Chain Project

News Jun 22, 2019 by Scott McMahan
10kW/10kVA Three-Level, Three-Phase SiC AC-DC Reference Design

10kW/10kVA Three-Level, Three-Phase SiC AC-DC Reference Design

News Jun 21, 2019 by Paul Shepard
UnitedSiC adds 4-lead Kelvin 1200V/150mΩ SiC FET

UnitedSiC adds 4-lead Kelvin 1200V/150mΩ SiC FET

new products Jun 20, 2019 by Paul Shepard
UnitedSiC adds new 4-lead Kelvin device to UF3C FAST FET series

UnitedSiC adds new 4-lead Kelvin device to UF3C FAST FET series

This article highlights UnitedSiC UF3C120150K4S 1200V high-performance SiC FET device in a TO-247-4L 4-leaded Kelvin Sense discrete package option.

new products Jun 20, 2019 by United Silicon Carbide
GaN Makes a Frontal Attack on Silicon Power MOSFETs

GaN Makes a Frontal Attack on Silicon Power MOSFETs

This article highlights Efficient Power Conversion eGaN FETs improvements in size and performance compared with equivalently Silicon power MOSFETs.

Technical Articles Jun 20, 2019 by Alex Lidow