Sanan IC Expands Portfolio with 650V 150mm GaN-on-Silicon Process
Sanan Integrated Circuit Co., Ltd., a pure-play wafer foundry with its advanced compound semiconductor technology platform, today announced the commercial release of its 150mm gallium nitride (GaN) on silicon wafer foundry services intended for the latest high voltage ac-dc and dc-ac power electronics applications in the global market.
Sanan IC's new G06P111 is a 650V enhanced-mode high-electron-mobility transistor (E-HEMT) GaN process which adds to the company's power electronics wafer foundry portfolio of wide bandgap (WBG) compound semiconductors that includes 100mm and 150mm silicon carbide (SiC) for high voltage Schottky Barrier Diodes (SBD).
Leveraging years of high volume GaN manufacturing experience by Sanan Optoelectronics Inc., its parent company, for the LED market, Sanan IC is able to complement its foundry services with in-house MOCVD growth capabilities of high voltage, low leakage GaN-on-silicon epitaxial wafers with high uniformity.
"The launch of our 650V GaN E-HEMT process technology exemplifies our commitment to advanced compound semiconductor manufacturing for serving the global market", said Jasson Chen, Assistant General Manager of Sanan IC. "We view GaN-on-silicon as a complimentary technology to silicon carbide as key wide bandgap semiconductors of choice for today's high voltage, high power electronics industry.
Component suppliers and system designers are migrating to wide bandgap semiconductors over traditional silicon for enhanced performance, efficiency, and reliability in high power analog designs. Sanan IC is well positioned for success in serving this high growth, large-scale power electronics market," concluded Chen.
The company's G06P11 GaN-on-silicon process, having passed the JEDEC standard for process reliability qualification, offers device structures for 650V E-mode FETs which support a drain-to-source on-state resistance RDS(on) range from 50mΩ to 400mΩ. Engineered for low leakage, low gate charge, high current density, and low dynamic specific on resistance (Rsp), it enables ultra-fast switching compact designs for high temperature operation.
Following later this year would be the launch of a 200V GaN E-HEMT process as well as a second generation SiC SBD process with a merged PiN Schottky (MPS) diode structure.
