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How Pareto Analysis Helps Determine the Real Benefits of GaN for Power Supplies

How Pareto Analysis Helps Determine the Real Benefits of GaN for Power Supplies


News Feb 24, 2020 by Paul Shepard
Black Phosphorous Tunnel Field-Effect Transistor as an Alternative to CMOS

Black Phosphorous Tunnel Field-Effect Transistor as an Alternative to CMOS


News Feb 23, 2020 by Paul Shepard
STMicroelectronics and TSMC Collaborate to Accelerate Market Adoption of Gallium Nitride-Based Products

STMicroelectronics and TSMC Collaborate to Accelerate Market Adoption of Gallium Nitride-Based Products

STMicroelectronics and TSMC collaborate for the development and delivery of advanced power GaN solutions to market, that leverages…


News Feb 22, 2020 by STMicroelectronics
Teledyne e2v HiRel Announces New HRel 100V GaN Power HEMT

Teledyne e2v HiRel Announces New HRel 100V GaN Power HEMT

STMicro and TSMC Collaborate to Accelerate Gallium Nitride Adoption

STMicro and TSMC Collaborate to Accelerate Gallium Nitride Adoption


News Feb 19, 2020 by Paul Shepard
100V GaN E-HEMT Full Bridge Evaluation Board

100V GaN E-HEMT Full Bridge Evaluation Board

Navitas‘ 65W GaN Charger Solution Chosen by Xiaomi for Mi 10 Pro

Navitas‘ 65W GaN Charger Solution Chosen by Xiaomi for Mi 10 Pro

SiC-Based Totem Pole PFC for Industrial Power Supplies

SiC-Based Totem Pole PFC for Industrial Power Supplies

This article focuses on the AC-to-DC stage with power factor correction


650V Silicon Carbide MOSFET Family offers RDS(on) Down to 27mΩ

650V Silicon Carbide MOSFET Family offers RDS(on) Down to 27mΩ

Transphorm to Showcase Market Adoption of High Voltage GaN at APEC 2020

Transphorm to Showcase Market Adoption of High Voltage GaN at APEC 2020


News Feb 12, 2020 by Paul Shepard
650V, 1200V, and 1700V Silicon Carbide Schottky Diodes Handle up to 50A

650V, 1200V, and 1700V Silicon Carbide Schottky Diodes Handle up to 50A

Silicon Carbide FETs Claim Lowest RDS(on) in DFN 8×8 format

Silicon Carbide FETs Claim Lowest RDS(on) in DFN 8×8 format

200W Desktop Adapters Feature GaN in a Lighter, Smaller Package

200W Desktop Adapters Feature GaN in a Lighter, Smaller Package

The World of Power Semiconductor Devices Meets in Vienna

The World of Power Semiconductor Devices Meets in Vienna

The 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) will be held in Vienna, Austria, May 17–21, 2020.


new products Feb 01, 2020 by ISPSD
Desktop Adapters Feature GaN Technology in a Lighter Smaller Package

Desktop Adapters Feature GaN Technology in a Lighter Smaller Package

CUI Inc announced the addition of two GaN desktop ac-dc power supply series to its SDI product family.


new products Jan 31, 2020 by CUI Inc.
Amtech Exits Solar to Focus on Semiconductors and Silicon Carbide

Amtech Exits Solar to Focus on Semiconductors and Silicon Carbide


News Jan 29, 2020 by Paul Shepard
SiC Power Modules in 200kW Three-Phase Inverter Reference Design

SiC Power Modules in 200kW Three-Phase Inverter Reference Design


News Jan 28, 2020 by Paul Shepard
Mouser’s Inventory Strengthened by Qorvo’s Latest Wide Bandgap Power Amplifier & Advanced Motor Controller/Driver

Mouser’s Inventory Strengthened by Qorvo’s Latest Wide Bandgap Power Amplifier & Advanced Motor Controller/Driver

The 100-W QPA3069 power amplifier is predominantly focused on defense and avionics applications.


new products Jan 28, 2020 by Mouser
Shin-Etsu Licenses Qormis’ Gallium-Nitride Substrate Technology

Shin-Etsu Licenses Qormis’ Gallium-Nitride Substrate Technology


News Jan 23, 2020 by Paul Shepard
Reinforced Isolated Single-Channel Gate Driver for SiC MOSFETs and IGBTs

Reinforced Isolated Single-Channel Gate Driver for SiC MOSFETs and IGBTs