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650V Silicon Carbide MOSFET Family offers RDS(on) Down to 27mΩ

650V Silicon Carbide MOSFET Family offers RDS(on) Down to 27mΩ

new products Feb 16, 2020 by Paul Shepard
Transphorm to Showcase Market Adoption of High Voltage GaN at APEC 2020

Transphorm to Showcase Market Adoption of High Voltage GaN at APEC 2020

News Feb 12, 2020 by Paul Shepard
650V, 1200V, and 1700V Silicon Carbide Schottky Diodes Handle up to 50A

650V, 1200V, and 1700V Silicon Carbide Schottky Diodes Handle up to 50A

new products Feb 09, 2020 by Paul Shepard
Silicon Carbide FETs Claim Lowest RDS(on) in DFN 8×8 format

Silicon Carbide FETs Claim Lowest RDS(on) in DFN 8×8 format

new products Feb 04, 2020 by Paul Shepard
200W Desktop Adapters Feature GaN in a Lighter, Smaller Package

200W Desktop Adapters Feature GaN in a Lighter, Smaller Package

new products Feb 03, 2020 by Paul Shepard
The World of Power Semiconductor Devices Meets in Vienna

The World of Power Semiconductor Devices Meets in Vienna

The 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD) will be held in Vienna, Austria, May 17–21, 2020.

new products Feb 01, 2020 by ISPSD
Desktop Adapters Feature GaN Technology in a Lighter Smaller Package

Desktop Adapters Feature GaN Technology in a Lighter Smaller Package

CUI Inc announced the addition of two GaN desktop ac-dc power supply series to its SDI product family.

new products Jan 31, 2020 by CUI Inc.
Amtech Exits Solar to Focus on Semiconductors and Silicon Carbide

Amtech Exits Solar to Focus on Semiconductors and Silicon Carbide

News Jan 29, 2020 by Paul Shepard
SiC Power Modules in 200kW Three-Phase Inverter Reference Design

SiC Power Modules in 200kW Three-Phase Inverter Reference Design

News Jan 28, 2020 by Paul Shepard
Mouser’s Inventory Strengthened by Qorvo’s Latest Wide Bandgap Power Amplifier & Advanced Motor Controller/Driver

Mouser’s Inventory Strengthened by Qorvo’s Latest Wide Bandgap Power Amplifier & Advanced Motor Controller/Driver

The 100-W QPA3069 power amplifier is predominantly focused on defense and avionics applications.

new products Jan 28, 2020 by Mouser
Shin-Etsu Licenses Qormis’ Gallium-Nitride Substrate Technology

Shin-Etsu Licenses Qormis’ Gallium-Nitride Substrate Technology

News Jan 23, 2020 by Paul Shepard
Reinforced Isolated Single-Channel Gate Driver for SiC MOSFETs and IGBTs

Reinforced Isolated Single-Channel Gate Driver for SiC MOSFETs and IGBTs

new products Jan 22, 2020 by Paul Shepard
Siemens Adds Low-Voltage Servo Drives with GaN Systems Power Transistors

Siemens Adds Low-Voltage Servo Drives with GaN Systems Power Transistors

News Jan 21, 2020 by Paul Shepard
MOSHEMT— Innovative Transistor Technology Reaches Record Frequencies

MOSHEMT— Innovative Transistor Technology Reaches Record Frequencies

News Jan 21, 2020 by Paul Shepard
Silicon Carbide Gate Drive Evaluation Platform from Littelfuse

Silicon Carbide Gate Drive Evaluation Platform from Littelfuse

new products Jan 21, 2020 by Paul Shepard
SMA Uses Infineon SiC Devices to Reduce System Costs for Inverters

SMA Uses Infineon SiC Devices to Reduce System Costs for Inverters

News Jan 20, 2020 by Paul Shepard
ROHM Group Company SiCrystal and STMicroelectronics Announce MultiYear Silicon Carbide Wafer Supply Agreement

ROHM Group Company SiCrystal and STMicroelectronics Announce MultiYear Silicon Carbide Wafer Supply Agreement

This article features STMicroelectronics agreement for multi-year SiC wafers supply with SiCrystal, a ROHM group company with share of SiC wafers…

News Jan 16, 2020 by ROHM
GaN Systems Captures a Place in the 2020 Global Cleantech 100

GaN Systems Captures a Place in the 2020 Global Cleantech 100

GaN Systems Captures a Place in the 2020 Global Cleantech 100.

new products Jan 16, 2020 by GaN Systems
SiCrystal and STMicro Pen Multi-Year SiC Wafer Supply Agreement

SiCrystal and STMicro Pen Multi-Year SiC Wafer Supply Agreement

News Jan 15, 2020 by Paul Shepard
MOSHEMT Innovative Transistor Technology Reaches Record Frequencies

MOSHEMT Innovative Transistor Technology Reaches Record Frequencies

This article highlights Fraunhofer IAF a success in developing a novel type of transistor with extremely high cut-off frequencies, the MOSHEMTs.

new products Jan 14, 2020 by Fraunhofer IAF