ROHM hightlights its 4th Generation 1200V SiC MOSFETs optimized for automotive powertrain systems, including the main drive inverter, as well as…
ROHM hightlights its 4th Generation 1200V SiC MOSFETs optimized for automotive powertrain systems, including the main drive inverter, as well as…
Vitesco chooses ROHM Semiconductor as its preferred partner for developing silicon carbide powered technology for…
Vitesco chooses ROHM Semiconductor as its preferred partner for developing silicon carbide powered technology for electrical vehicles.
This article discusses the NexGen's Vertical GaN™ eJFET transistors and their principles of operation.
This article discusses the NexGen's Vertical GaN™ eJFET transistors and their principles of operation.
The grant was made by the "Driving the Electric Revolution Challenge" program, part of UKRI’s Industrial Strategy…
The grant was made by the "Driving the Electric Revolution Challenge" program, part of UKRI’s Industrial Strategy Challenge Fund.
Researchers at the University of Buffalo have developed a breakthrough in power electronics, a lateral gallium…
Researchers at the University of Buffalo have developed a breakthrough in power electronics, a lateral gallium oxide-based transistor that can…
In a recent collaboration with the Chalmers University of Technology, SweGaN introduced a 'buffer-free' concept for…
In a recent collaboration with the Chalmers University of Technology, SweGaN introduced a 'buffer-free' concept for GaN-on-SiC electron…
Nexperia highlights a new range of GaN FET devices featuring next-gen high-voltage GaN HEMT H2 technology in both TO-247…
Nexperia highlights a new range of GaN FET devices featuring next-gen high-voltage GaN HEMT H2 technology in both TO-247 and the company’s…
An increasing number of leading electric car manufacturers are moving to Silicon Carbide (SiC) Power Transistors for…
An increasing number of leading electric car manufacturers are moving to Silicon Carbide (SiC) Power Transistors for traction inverters, with some…
Scientists at NIST and UMD became the second group to construct a single-atom transistor. This month, the researchers…
Scientists at NIST and UMD became the second group to construct a single-atom transistor. This month, the researchers demonstrated how to precisely…
Taiwan Semiconductors announced the TUAS8x Series of surface-mount device (SMD) rectifiers, available with voltage…
Taiwan Semiconductors announced the TUAS8x Series of surface-mount device (SMD) rectifiers, available with voltage ratings from 200V-1000V.
Alpha and Omega Semiconductor announces the release of new 1200V SiC MOSFET with optimized temperature and switching…
Alpha and Omega Semiconductor announces the release of new 1200V SiC MOSFET with optimized temperature and switching behavior for high-efficiency…
Smart homes are becoming more and more widespread across the globe, and with them, new systems must facilitate powerful…
Smart homes are becoming more and more widespread across the globe, and with them, new systems must facilitate powerful 5G technologies.
With a fresh round of seed funding and plans for a pilot plant, U.K. gallium nitride startup Porotech is making strides…
With a fresh round of seed funding and plans for a pilot plant, U.K. gallium nitride startup Porotech is making strides to bring its porous GaN…
Power Integrations announced that its InnoSwitch™3-MX isolated switcher IC family has been expanded with the addition…
Power Integrations announced that its InnoSwitch™3-MX isolated switcher IC family has been expanded with the addition of three new PowiGaN™…
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