Sanan IC Adds High-Voltage Wide Bandgap Power Semi Foundry Platform

April 22, 2020 by Paul Shepard

Sanan Integrated Circuit Co., Ltd. announced worldwide access to its growing portfolio of advanced, wide bandgap power semiconductor foundry services for 650V and 1200V silicon carbide (SiC) devices, and 650V gallium nitride (GaN) power high-electron-mobility-transistors (HEMT).

"Sanan IC's parent company, Sanan Optoelectronics Co., Ltd., has extensive high-volume compound semiconductor manufacturing experience, which inspired us to start building our own line of wide bandgap semiconductor technologies for power electronics," says Raymond Cai, CEO of Sanan IC. "Moreover, we recognize that the power industry needs access to cutting edge foundry services. Sanan IC's capabilities provide high-growth power markets with a comprehensive platform for product prototyping, combining reduced entry barrier and mass production with unmatched service, security and quality control."

Initiated by the adoption of GaN solutions in top smartphone vendors and SiC in big data markets, both technologies are recognized by the power device industry for reshaping system design. As such, Sanan IC is dedicated to bolstering the GaN and SiC technology evolution. With comprehensive power electronics foundry services, extensive experience in mass production, and compliance with quality and security standards, Sanan IC is an ideal partner to ensure success with applications including:

  • Electric vehicles (EV) and hybrid electric vehicles (HEV)
  • Uninterruptible power supplies (UPS) with power factor correction (PFC)
  • Power adapters and battery charging
  • Photovoltaic inverters and energy storage
  • Motor drives

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In June 2019, Sanan IC released G06P111, a standard JEDEC qualified 650V enhanced-mode HEMT GaN process technology. Since then, Sanan IC has developed several multi-project wafer (MPW) shuttle runs for GaN process. Using Sanan IC's process design kits and e-foundry services, designers are able to experience GaN device design and performance that ensures first-time-right designs before mass production.

This year the company plans to provide MPW runs for a much wider selection of technologies, including services for 200V and 100V low voltage E-HEMT process, and M3 process for large current design. There are plans to develop additional technologies such as GaN integrated circuits (IC) and highly reliable D-mode metal insulator semiconductor field-effect transistors (D-MISFET), scheduled to be added to Sanan IC's power portfolio later this year.

Sanan IC's manufacturing management system has earned several internationally recognized certifications, including IATF 16949:2016, ISO 9001:2015 and ISO 27001:2013, all of which demonstrate the company's commitment to strict security procedures in information and intellectual property protection. To expedite customers' time to market, Sanan IC also offers one-stop-services for early product development, including copper (Cu) metal process, back-grinding, back-metal and dicing, circuit probe tests and standard plastic packaging using open lead frames.