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GaN Increases Output Power of High-Efficiency Display PSUs to 75W

GaN Increases Output Power of High-Efficiency Display PSUs to 75W

24V Constant Voltage GaN Power Reference Design for Smart Home Lighting

24V Constant Voltage GaN Power Reference Design for Smart Home Lighting


News Apr 20, 2020 by Paul Shepard
650V / 60mΩ SiC FETs in 6.6kW High-Frequency DC-DC Converter Reference Design

650V / 60mΩ SiC FETs in 6.6kW High-Frequency DC-DC Converter Reference Design

Cree’s Wolfspeed Adds to Portfolio with 650V MOSFETs for EVs

Cree’s Wolfspeed Adds to Portfolio with 650V MOSFETs for EVs

Powerhouse semiconductor company Cree recently announced the Wolfspeed 650V silicon carbide MOSFETs (metal-oxide-semiconductor field-effect…


GaN Switches in 3.3kW Bidirectional Interleaved CCM Totem Pole Bridgeless PFC Reference Design

GaN Switches in 3.3kW Bidirectional Interleaved CCM Totem Pole Bridgeless PFC Reference Design

Avalanche Ruggedness of SiC MPS Diodes Under Repetitive Unclamped-Inductive-Switching Stress

Avalanche Ruggedness of SiC MPS Diodes Under Repetitive Unclamped-Inductive-Switching Stress

This article highlights avalanche ruggedness of discrete 1.2 kV SiC MPS diodes.


Transphorm Intros SuperGaN Power FETs with Launch of Gen IV GaN Platform

Transphorm Intros SuperGaN Power FETs with Launch of Gen IV GaN Platform

2.2kW Bridgeless Totem-Pole PFC with Cree SiC FETs and Infineon Analog Control

2.2kW Bridgeless Totem-Pole PFC with Cree SiC FETs and Infineon Analog Control

15 kW, 3-Phase Vienna Rectifier Reference Design with SiC FETs and Mixed-Signal Control

15 kW, 3-Phase Vienna Rectifier Reference Design with SiC FETs and Mixed-Signal Control

Transphorm and Microchip Combine High Reliability GaN and Digital Signal Processing Technology to Drive GaN Adoption

Transphorm and Microchip Combine High Reliability GaN and Digital Signal Processing Technology to Drive GaN Adoption

Transphorm announces its partnership with Microchip Technology.


new products Apr 09, 2020 by Transphorm
Poro Technologies Gets £1.5 Million Seed Round for Porous GaN Semis

Poro Technologies Gets £1.5 Million Seed Round for Porous GaN Semis


News Apr 08, 2020 by Paul Shepard
SiGe RF Extends Wi-Fi 6 Range and Reduces Power Consumption

SiGe RF Extends Wi-Fi 6 Range and Reduces Power Consumption


News Apr 08, 2020 by Paul Shepard
GaN Systems Launches Online Experience Showcase

GaN Systems Launches Online Experience Showcase


News Apr 06, 2020 by Paul Shepard
Transphorm GaN FETs and Microchip Digital Control in 4kW PFC Eval Board

Transphorm GaN FETs and Microchip Digital Control in 4kW PFC Eval Board

Silicon Carbide FETs Replace IGBTs in Karma Automotive Traction Inverters

Silicon Carbide FETs Replace IGBTs in Karma Automotive Traction Inverters


News Apr 03, 2020 by Paul Shepard
Gallium Nitride from Navitas Leads the Mobile Fast-Charger Revolution

Gallium Nitride from Navitas Leads the Mobile Fast-Charger Revolution


News Apr 02, 2020 by Paul Shepard
Testing GaN Devices to Failure Demonstrates Robustness Unmatched by Si Power MOSFETs

Testing GaN Devices to Failure Demonstrates Robustness Unmatched by Si Power MOSFETs


News Apr 02, 2020 by Paul Shepard
9A Low Side Silicon Carbide MOSFET and IGBT Driver

9A Low Side Silicon Carbide MOSFET and IGBT Driver

6.6kW Bi-Directional EV OBC with Silicon Carbide and Digital Control – Reference Design

6.6kW Bi-Directional EV OBC with Silicon Carbide and Digital Control – Reference Design

Silicon Carbide MOSFET Motor Drive Evaluation Board in TO247 Packages

Silicon Carbide MOSFET Motor Drive Evaluation Board in TO247 Packages


News Mar 31, 2020 by Paul Shepard