EEPower

Latest Wide Bandgap Articles

Categories

Element Six Acquires Group4 Labs to offer GaN-on-Diamond Power Semiconductors

Element Six Acquires Group4 Labs to offer GaN-on-Diamond Power Semiconductors


News Jun 02, 2013 by Jeff Shepard
NXP Nabs £2 Million Grant to Develop GaN Power Semiconductors

NXP Nabs £2 Million Grant to Develop GaN Power Semiconductors


News May 29, 2013 by Jeff Shepard
Epitaxial SiC Films Grown on 300mm Si Wafers

Epitaxial SiC Films Grown on 300mm Si Wafers


News May 28, 2013 by Jeff Shepard
Nitronex Qualifies 28V / 50W GaN Transistor

Nitronex Qualifies 28V / 50W GaN Transistor

EPC Opens GaN Power Library - Aims to Accelerate Adoption

EPC Opens GaN Power Library - Aims to Accelerate Adoption


News May 20, 2013 by Jeff Shepard
SiC and GaN Again a Major Focus at PCIM Europe

SiC and GaN Again a Major Focus at PCIM Europe

SiC Modules, IGBTs and Super-Junction MOSFETs Introduced on Day One of PCIM

SiC Modules, IGBTs and Super-Junction MOSFETs Introduced on Day One of PCIM

Gate Drive Optocouplers  for High-Speed SiC FETs Deliver up to 2.5A

Gate Drive Optocouplers for High-Speed SiC FETs Deliver up to 2.5A

Gallium-Nitride-on-Silicon Devices from IR in Home Theater System

Gallium-Nitride-on-Silicon Devices from IR in Home Theater System


News May 08, 2013 by Jeff Shepard
New Method Joins GaN and Diamond for Better Thermal Management

New Method Joins GaN and Diamond for Better Thermal Management


News May 02, 2013 by Jeff Shepard
SiC-based Fault Current Limiter Developed at Arkansas’ NCREPT

SiC-based Fault Current Limiter Developed at Arkansas’ NCREPT


News Apr 22, 2013 by Jeff Shepard
Bridgelux Sells GaN-on-Silicon Technology/Chip related Assets to Toshiba

Bridgelux Sells GaN-on-Silicon Technology/Chip related Assets to Toshiba


News Apr 22, 2013 by Jeff Shepard
Cree and Delta Partner to Design Next-Generation Solar Inverters with SiC MOSFETs

Cree and Delta Partner to Design Next-Generation Solar Inverters with SiC MOSFETs


News Apr 16, 2013 by Jeff Shepard
Toshiba Starts SiC Power Device Volume Production, Aims for 30% Market Share

Toshiba Starts SiC Power Device Volume Production, Aims for 30% Market Share

Upgraded GaN FET Development Board Features Texas Instruments’ Gate Driver

Upgraded GaN FET Development Board Features Texas Instruments’ Gate Driver


News Apr 08, 2013 by Jeff Shepard
600V GaN Normally-Off “Gate Injection” Power Transistor Intro’d by Panasonic

600V GaN Normally-Off “Gate Injection” Power Transistor Intro’d by Panasonic

Mitsubishi Electric Delivers 140kVA SiC Auxiliary Power Supply Systems for Railcars

Mitsubishi Electric Delivers 140kVA SiC Auxiliary Power Supply Systems for Railcars


News Mar 25, 2013 by Jeff Shepard
ROHM SiC MOS Module, without a Schottky Diode Enters High-Volume Production

ROHM SiC MOS Module, without a Schottky Diode Enters High-Volume Production

APEI and GaN Systems Demonstrate High-Efficiency DC-DC Boost Converter with GaN Switch

APEI and GaN Systems Demonstrate High-Efficiency DC-DC Boost Converter with GaN Switch


News Mar 18, 2013 by Jeff Shepard
Transphorm Scales Up to 200-mm Wafers with AIX G5+ GaN-on-Si System from AIXTRON

Transphorm Scales Up to 200-mm Wafers with AIX G5+ GaN-on-Si System from AIXTRON


News Mar 12, 2013 by Jeff Shepard