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80-milliohm 1200V SiC MOSFETs are Co-packaged with SiC Schottkys

80-milliohm 1200V SiC MOSFETs are Co-packaged with SiC Schottkys

Toshiba Expands Family of SiC Schottky Barrier Diodes

Toshiba Expands Family of SiC Schottky Barrier Diodes

EPC Expands eGaN FET Family with 100V / 16 milliohm Power Transistor

EPC Expands eGaN FET Family with 100V / 16 milliohm Power Transistor

APEI-lead Team Developing SiC and GaN Traction Drive Systems

APEI-lead Team Developing SiC and GaN Traction Drive Systems


News Sep 08, 2013 by Jeff Shepard
Imec and Veeco to Collaborate on Production of GaN-on-Si Devices

Imec and Veeco to Collaborate on Production of GaN-on-Si Devices


News Sep 02, 2013 by Jeff Shepard
Improved Tandem Diodes from STMicro Offered as Economical Alternative to SiC

Improved Tandem Diodes from STMicro Offered as Economical Alternative to SiC

Toshiba Launches 800V Bipolar Transistor for Switching Power Supplies

Toshiba Launches 800V Bipolar Transistor for Switching Power Supplies

IXYS Intros High-Power SiC Diode Modules for 600V and 1200V Applications

IXYS Intros High-Power SiC Diode Modules for 600V and 1200V Applications

3 Days of GaN, SiC and GaAs Power Semis at DPF ‘13

3 Days of GaN, SiC and GaAs Power Semis at DPF ‘13


News Aug 11, 2013 by Jeff Shepard
Cree Licenses GaN Device Patents to Transphorm

Cree Licenses GaN Device Patents to Transphorm


News Aug 04, 2013 by Jeff Shepard
GaN Systems appoints Larry Spaziani as VP, Product Management

GaN Systems appoints Larry Spaziani as VP, Product Management


News Jul 23, 2013 by Jeff Shepard
Delta Elektronika uses Cree SiC FETs in Next-Gen High-Efficiency Power Supplies

Delta Elektronika uses Cree SiC FETs in Next-Gen High-Efficiency Power Supplies


News Jul 21, 2013 by Jeff Shepard
Fujitsu Beginning to Sample 150V GaN Power Device, Production Scheduled for 2014

Fujitsu Beginning to Sample 150V GaN Power Device, Production Scheduled for 2014

IR and EPC Reach Settlement and Royalty Agreement Related to GaN Power

IR and EPC Reach Settlement and Royalty Agreement Related to GaN Power


News Jun 25, 2013 by Jeff Shepard
US Government Honors Raytheon for GaN Innovations

US Government Honors Raytheon for GaN Innovations


News Jun 12, 2013 by Jeff Shepard
Nitronex Introduces 48V GaN-on-Si Power Transistors

Nitronex Introduces 48V GaN-on-Si Power Transistors

Element Six Acquires Group4 Labs to offer GaN-on-Diamond Power Semiconductors

Element Six Acquires Group4 Labs to offer GaN-on-Diamond Power Semiconductors


News Jun 02, 2013 by Jeff Shepard
NXP Nabs £2 Million Grant to Develop GaN Power Semiconductors

NXP Nabs £2 Million Grant to Develop GaN Power Semiconductors


News May 29, 2013 by Jeff Shepard
Epitaxial SiC Films Grown on 300mm Si Wafers

Epitaxial SiC Films Grown on 300mm Si Wafers


News May 28, 2013 by Jeff Shepard
Nitronex Qualifies 28V / 50W GaN Transistor

Nitronex Qualifies 28V / 50W GaN Transistor