Upgraded GaN FET Development Board Features Texas Instruments’ Gate Driver
Efficient Power Conversion Corporation (EPC) today announces the availability of the EPC9005 development board, featuring EPC's enhancement-mode gallium nitride (eGaN) field-effect transistors (FETs). This board demonstrates how IC gate drivers, optimized for eGaN FETs, make the task of transitioning from silicon to eGaN technology simple and cost effective. The EPC9005 development board is a half-bridge configuration containing two 40-V EPC2014 eGaN FETs with a 7A maximum output current using a gate driver optimized for GaN devices, the LM5113 from Texas Instruments, Inc.
The LM5113 used on this board is packaged in a 2x2 BGA package allowing for a very compact power stage with the driver and two eGaN FETs. The EPC2014 is designed for use in applications such as high-speed dc-dc power supplies, point-of-load converters, wireless charging, and high-frequency circuits.
The EPC9005 simplifies the evaluation process of eGaN FETs by including all the critical components on single 2â€ x 1.5â€ boards that can be easily connected into any existing converter. In addition, there are various probe points on the board to facilitate simple waveform measurement and efficiency calculation. A Quick Start Guide is included with the development board for reference and ease of use. The EPC9005 is priced at $99.18