Gallium-Nitride-on-Silicon Devices from IR in Home Theater System
International Rectifier Corporation (IR) has qualified and shipped product built on its proprietary Gallium-Nitride (GaN) on silicon power device technology platform for a home theater system manufactured by a leading consumer electronics company.
In announcing this development, IR noted: this achievement underlines International Rectifierâ€™s strategic advantage in the power management market, providing a capital-efficient manufacturing model that enables customers with improvements in key application-specific figures of merit (FOM) of up to a factor of ten compared to state-of-the-art silicon-based technology. This latest milestone demonstrates International Rectifierâ€™s ongoing commitment to providing its customers with leading-edge power management technology.
â€œCommencing commercial shipments based on our leading-edge GaN-based technology platform and IP portfolio extends IRâ€™s leadership in power semiconductor devices and heralds a new era for power conversion, in line with our core mission to help our customers save energy,â€ stated IRâ€™s President and Chief Executive Officer, Oleg Khaykin. â€œWe fully anticipate the potential impact of GaN-based technology on the power conversion market to be at least as large as the introduction of the power HEXFETÂ® by IR over 30 years ago.â€
â€œGaN has the potential to be infused into every business unit and product line within IR over the long-term. We are excited about GaN, and see it as one of the major drivers for our long-term revenue growth, and market share expansion. I would like to thank all of the individuals involved and congratulate them for this tremendous accomplishment,â€ Mr. Khaykin concluded.
IRâ€™s GaN-based power device technology platform is the result of ten years of research and development based on the company's proprietary GaN-on-silicon epitaxial technology. The high-throughput, 150mm GaN-on-Si epitaxy, together with subsequent device fabrication processes which are fully compatible with IRâ€™s current cost-effective silicon manufacturing facilities, offers customers a world-class, commercially-viable manufacturing platform for GaN-based power devices.