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Transphorm Releases First JEDEC-Qualified 600V GaN-on-Silicon Power Devices

Transphorm Releases First JEDEC-Qualified 600V GaN-on-Silicon Power Devices

Global Power Device Comes out of Stealth, Launches SiC Devices

Global Power Device Comes out of Stealth, Launches SiC Devices

Second-Generation SiC MOSFETs from Cree Deliver Twice the Amps-Per-Dollar

Second-Generation SiC MOSFETs from Cree Deliver Twice the Amps-Per-Dollar

10A / 1200V SiC Schottky Rectifier Improves High-Temperature Performance

10A / 1200V SiC Schottky Rectifier Improves High-Temperature Performance

Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC Enables 175C Operation

Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC Enables 175C Operation

SemiSouth Lab’s SiC Manufacturing and Test Equipment to be Sold via Global Webcast Auction

SemiSouth Lab’s SiC Manufacturing and Test Equipment to be Sold via Global Webcast Auction


News Mar 05, 2013 by Jeff Shepard
High-Voltage Hermetic SiC MOSFETs for use in High-Temp. and Harsh Environments

High-Voltage Hermetic SiC MOSFETs for use in High-Temp. and Harsh Environments

Transphorm Teams with Yskawa for GaN-based High-Power Converter

Transphorm Teams with Yskawa for GaN-based High-Power Converter


News Feb 26, 2013 by Jeff Shepard
GaN Systems Expands With New Technical Support Office in the UK

GaN Systems Expands With New Technical Support Office in the UK


News Feb 26, 2013 by Jeff Shepard
Texas Instruments Targets IGBT and SiC FET Designs with New Gate Drivers

Texas Instruments Targets IGBT and SiC FET Designs with New Gate Drivers

GeneSiC Intros High-Voltage Silicon-Carbide Junction Transistors

GeneSiC Intros High-Voltage Silicon-Carbide Junction Transistors

Cree and Eta to Demonstrate High-Efficiency (70%+) GaN-Based Power Amplifier for Mobile Base Stations

Cree and Eta to Demonstrate High-Efficiency (70%+) GaN-Based Power Amplifier for Mobile Base Stations


News Feb 19, 2013 by Jeff Shepard
ROHM Claims First Mass-Produced SiC MOS Module Without a Schottky Diode

ROHM Claims First Mass-Produced SiC MOS Module Without a Schottky Diode

Mitsubishi Electric Develops 1,200V/1,200A SiC Power Module Technologies

Mitsubishi Electric Develops 1,200V/1,200A SiC Power Module Technologies

Raytheon Achieves UK First with Opening of New Silicon-Carbide Foundry

Raytheon Achieves UK First with Opening of New Silicon-Carbide Foundry


News Jan 30, 2013 by Jeff Shepard
Microsemi Expands SiC Power Module Product Family in Industrial and Extended Temperature Ranges

Microsemi Expands SiC Power Module Product Family in Industrial and Extended Temperature Ranges

AIXTRON Supports The First Move into GaN Power Electronics Industry in China

AIXTRON Supports The First Move into GaN Power Electronics Industry in China


News Dec 05, 2012 by Jeff Shepard
EPC Publishes Chinese Edition of Gallium Nitride (GaN) Transistor Textbook

EPC Publishes Chinese Edition of Gallium Nitride (GaN) Transistor Textbook


News Dec 03, 2012 by Jeff Shepard
Cree Offers Fully-Qualified, Production-Ready All-SiC 100A Power Module

Cree Offers Fully-Qualified, Production-Ready All-SiC 100A Power Module

ROHM’s Ultra-Compact Transistor Package

ROHM’s Ultra-Compact Transistor Package