The U.K.’s Chief Secretary to the Treasury, Danny Alexander, announced a £2 million grant for research by NXP Semiconductors UK into the development of a breakthrough electronics material, Gallium Nitride (GaN). The funding, which comes from the government’s Regional Growth Fund (RGF), will support a private sector investment of over £7.5 million. According to the Chief Secretary, this investment safeguards over 400 existing jobs, creates up to 100 new positions in Stockport and firmly establishes the UK as a global research hub for the world-leading electronics firm NXP.
NXP Semiconductors UK successfully bid for funding to develop GaN power semiconductors using GaN. The funding has been awarded as part of the third round of the Regional Growth Fund and will be used to recruit extra research and development staff, make prototype models, consult the UK’s leading academics and provide equipment for the development phase. It will support NXP’s investment to create a leading center for power semiconductors in its Manchester facility, as well as local businesses and suppliers.
Speaking to the Manchester Chamber of Commerce commented: “I’m very pleased that money from the Regional Growth Fund is supporting the world-leading GaN research facility in Stockport which is a real boost for the local area, supporting a huge private sector investment and local jobs. The Regional Growth Fund gives us the opportunity to support innovative projects like this and shows we are doing everything we can to boost growth and the position of the UK as a global leader in science and innovative technology.â€
