EEPower

Latest Silicon Carbide Articles

Categories

Signing Seals Compound Semiconductor Cluster in South-East Wales

Signing Seals Compound Semiconductor Cluster in South-East Wales


News Sep 11, 2017 by Paul Shepard
1200-Volt SiC Schottkys for High-Temperature Designs

1200-Volt SiC Schottkys for High-Temperature Designs

SiC Power Modules for a Wide Application Range Innovative Power Devices for a Sustainable Future

SiC Power Modules for a Wide Application Range Innovative Power Devices for a Sustainable Future

This article explains in detail the innovation potential and benefits of integrating SiC-technology in power electronics systems.


IEEE Rates Peregrine Semiconductor as a Leader in “Patent Power”

IEEE Rates Peregrine Semiconductor as a Leader in “Patent Power”


News Sep 07, 2017 by Paul Shepard
High-Current 4-Channel H-bridge Motor Driver IC is 0.9mm High

High-Current 4-Channel H-bridge Motor Driver IC is 0.9mm High

COLD SPLIT Provides Significant Cost Advantages for SiC Substrates and Devices

COLD SPLIT Provides Significant Cost Advantages for SiC Substrates and Devices

This article highlights Siltectra's Cold Split, a kerf-free wafering technique, and discusses its advantages over conventional techniques.


Compound Semiconductor Applications Catapult appoints CEO

Compound Semiconductor Applications Catapult appoints CEO


News Sep 02, 2017 by Paul Shepard
Pressureless Sinter Joining for Next-Gen GaN & SiC Power Semis

Pressureless Sinter Joining for Next-Gen GaN & SiC Power Semis


News Sep 01, 2017 by Paul Shepard
Economical High Resistance Chip Resistors

Economical High Resistance Chip Resistors

S3semi sets Custom Mixed-Signal IC Strategy for Industrial Systems

S3semi sets Custom Mixed-Signal IC Strategy for Industrial Systems


News Aug 30, 2017 by Paul Shepard
ROHM now Offering SiC, IGBTs and Gate Drivers in India

ROHM now Offering SiC, IGBTs and Gate Drivers in India


News Aug 30, 2017 by Paul Shepard
Suppress Noise in Power Circuits with High-Impedance Chip Beads

Suppress Noise in Power Circuits with High-Impedance Chip Beads

250W 50V GaN HEMT with High Efficiency to 3.0GHz

250W 50V GaN HEMT with High Efficiency to 3.0GHz

SII Semiconductor Changes Name to ABLIC Inc.

SII Semiconductor Changes Name to ABLIC Inc.


News Aug 24, 2017 by Paul Shepard
50V GaN HEMT Family Released with a High Efficiency 30GHz 250W Device

50V GaN HEMT Family Released with a High Efficiency 30GHz 250W Device

Wolfspeed has extended its family of 50V unmatched GaN HEMT RF power devices.


new products Aug 24, 2017 by Wolfspeed
Brite Semi and SaberTek Partner on Smart Utility Network Wireless Chip

Brite Semi and SaberTek Partner on Smart Utility Network Wireless Chip


News Aug 23, 2017 by Paul Shepard
3W 2817-Size Ceramic Chip Resistors Support 1A to 30A Designs

3W 2817-Size Ceramic Chip Resistors Support 1A to 30A Designs

DC-DC Converters for Driving Next-Gen SiC MOSFETs

DC-DC Converters for Driving Next-Gen SiC MOSFETs

Microsemi to Develop 1.7kV and 3.3kV SiC FETS and Diodes for PowerAmerica

Microsemi to Develop 1.7kV and 3.3kV SiC FETS and Diodes for PowerAmerica


News Aug 17, 2017 by Paul Shepard
High-Purity Silicon Carbide Technology Platform for SiC Power Devices

High-Purity Silicon Carbide Technology Platform for SiC Power Devices


News Aug 16, 2017 by Paul Shepard