High-Purity Silicon Carbide Technology Platform for SiC Power Devices
Pallidus, Inc. today announced its proprietary M-SiC™ material and technology platform with the capability to deliver cost/performance parity against silicon devices in the $12.5 billion power device market, creating the potential for significant market disruption.
With a compound annual growth rate (CAGR) of greater than 25%, silicon carbide power devices deliver superior performance in key segments of the power electronics market - wind energy, electronic vehicles and aerospace.
The ability to achieve cost/performance parity with silicon devices will increase market penetration by up to six times - creating a market value of >$1.5 billion in SiC power devices. The single biggest hurdle to market expansion is the cost and availability of high quality silicon carbide wafers. Pallidus believes that M-SiC technology provides the solution.
Pallidus M-SiC is one of the world's purest and most uniform silicon carbide source materials. Compatible with current manufacturing processes, M-SiC reduces the production cycle and improves both the quality and overall yield of silicon carbide wafers. Delivering a major reduction in wafer defects, M-SiC can significantly improve overall device yield.
Glenn Sangren, President and CEO, Pallidus
Taken together, M-SiC delivers up to a 50% decrease in both wafer and device production costs with a significantly lower capital investment.
"After extensive industry and independent third-party testing, it is clear that we have a disruptive game-changer," said Glenn Sandgren, Chief Executive Officer, Pallidus. "The possibilities for new uses of wafer technology are as limitless as the future of the power electronics market."
Andrei Maltsev, President AGP Technologies LLC stated, "The very high purity and form of M-SiC has allowed us to grow the highest quality 4H-SiC 6-inch wafers with the lowest defect density we have ever seen."
Professor Peter Wellman of the University of Erlangen, Germany, stated, "M-SiC exhibits exceptional opportunity for the growth of the highest quality crystals. In addition, the capability to produce custom shaped 'charges' enables the never before seen opportunity to achieve ideal system performance."
"Despite its superior performance, high cost is the key obstacle for the full adoption of SiC power devices. In particular the SiC wafer contributes up to 60% of the final cost. Technology that can drive a major cost reduction will immediately and significantly accelerate SiC technology adoption and penetration," comments Dr. Hong Lin, Technology & Market Analyst at Yole Developpement.
