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150°C Rated 1206 Chip Ferrite Beads for Automotive Power Lines

150°C Rated 1206 Chip Ferrite Beads for Automotive Power Lines

Power Monitoring IC Provides 99% Accuracy in Windows 10 Devices

Power Monitoring IC Provides 99% Accuracy in Windows 10 Devices

Ascatron enters SiC Power Device Market with Diodes up to 10kV

Ascatron enters SiC Power Device Market with Diodes up to 10kV


News Sep 18, 2017 by Paul Shepard
Quad DMOS Full-Bridge PWM Motor Driver IC

Quad DMOS Full-Bridge PWM Motor Driver IC

Allegro MicroSystems Europe introduces a quad DMOS full-bridge driver IC capable of driving up to two stepper motors or four DC motors


SiC Devices Poised and Ready for Harsh Environment Applications

SiC Devices Poised and Ready for Harsh Environment Applications

This article discusses the challenges of SiC devices under high humidity conditions and introduces the new WAS300M12BM2 Wolfspeed power module.


SDK to Expand Capacity for High-Grade SiC Epitaxial Wafers

SDK to Expand Capacity for High-Grade SiC Epitaxial Wafers


News Sep 14, 2017 by Paul Shepard
New Process for Making SiC Power Devices Opens Market to More Competition

New Process for Making SiC Power Devices Opens Market to More Competition


News Sep 14, 2017 by Paul Shepard
Stepping Motor Driver IC has an Anti-Stall Feedback Architecture

Stepping Motor Driver IC has an Anti-Stall Feedback Architecture

Three-Axis Linear Hall-Effect Sensor IC Alternative to Potentiometers

Three-Axis Linear Hall-Effect Sensor IC Alternative to Potentiometers

New 1200V 40A H1 IGBT Optimized for High Switching Frequency Applications Announced

New 1200V 40A H1 IGBT Optimized for High Switching Frequency Applications Announced

Alpha and Omega Semiconductor Ltd. expands its recently launched fast turn-off switched 650V H-series IGBT family with a 1200V rating


Newly-Discovered Semiconductor Dynamics May Help Improve Energy Efficiency

Newly-Discovered Semiconductor Dynamics May Help Improve Energy Efficiency


News Sep 11, 2017 by Paul Shepard
Signing Seals Compound Semiconductor Cluster in South-East Wales

Signing Seals Compound Semiconductor Cluster in South-East Wales


News Sep 11, 2017 by Paul Shepard
1200-Volt SiC Schottkys for High-Temperature Designs

1200-Volt SiC Schottkys for High-Temperature Designs

SiC Power Modules for a Wide Application Range Innovative Power Devices for a Sustainable Future

SiC Power Modules for a Wide Application Range Innovative Power Devices for a Sustainable Future

This article explains in detail the innovation potential and benefits of integrating SiC-technology in power electronics systems.


IEEE Rates Peregrine Semiconductor as a Leader in “Patent Power”

IEEE Rates Peregrine Semiconductor as a Leader in “Patent Power”


News Sep 07, 2017 by Paul Shepard
High-Current 4-Channel H-bridge Motor Driver IC is 0.9mm High

High-Current 4-Channel H-bridge Motor Driver IC is 0.9mm High

COLD SPLIT Provides Significant Cost Advantages for SiC Substrates and Devices

COLD SPLIT Provides Significant Cost Advantages for SiC Substrates and Devices

This article highlights Siltectra's Cold Split, a kerf-free wafering technique, and discusses its advantages over conventional techniques.


Compound Semiconductor Applications Catapult appoints CEO

Compound Semiconductor Applications Catapult appoints CEO


News Sep 02, 2017 by Paul Shepard
Pressureless Sinter Joining for Next-Gen GaN & SiC Power Semis

Pressureless Sinter Joining for Next-Gen GaN & SiC Power Semis


News Sep 01, 2017 by Paul Shepard
Economical High Resistance Chip Resistors

Economical High Resistance Chip Resistors