X-FAB expands its SiC capacity and adds new in-house epitaxy capabilities
X-FAB expands its SiC capacity and adds new in-house epitaxy capabilities
Infineon Technologies expands its Schottky Diode portfolio by adding six devices in D2PAK real 2-pin package.
Infineon Technologies expands its Schottky Diode portfolio by adding six devices in D2PAK real 2-pin package.
By pairing the SCALE-iDriver control and safety features with its high-speed FluxLink™ communication technology, Power…
By pairing the SCALE-iDriver control and safety features with its high-speed FluxLink™ communication technology, Power Integrations delivers a…
The 3 kW ZHR483KS uses Transphorm’s GaN devices to reach 98 percent efficiency.
The 3 kW ZHR483KS uses Transphorm’s GaN devices to reach 98 percent efficiency.
This article discusses the benefits of commercial GaN power transistors in comparison to Si SJMOS and SiC MOS transistors…
This article discusses the benefits of commercial GaN power transistors in comparison to Si SJMOS and SiC MOS transistors for a soft-switching LLC…
Richardson RFPD announced the availability and full design support capabilities for a new silicon carbide module from…
Richardson RFPD announced the availability and full design support capabilities for a new silicon carbide module from Wolfspeed, a Cree Company.
Toshiba Electronics Europe announced its new IGBT/MOSFET gate driver with additional built-in functionality.
Toshiba Electronics Europe announced its new IGBT/MOSFET gate driver with additional built-in functionality.
The new 90 W PoE portfolio more than doubles standard PoE power and expands the capabilities of wireless access points…
The new 90 W PoE portfolio more than doubles standard PoE power and expands the capabilities of wireless access points and IoT wireless gateways.
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