This article discusses how the cost differences can be bridged by the benefits of the 4x inductor size reduction, smaller…
This article discusses how the cost differences can be bridged by the benefits of the 4x inductor size reduction, smaller heat sink and smaller…
The third-generation C3M MOSFET technology delivers up to 20% lower switching losses than competing silicon carbide…
The third-generation C3M MOSFET technology delivers up to 20% lower switching losses than competing silicon carbide MOSFETs and provides the lowest…
ALLOS applied its unique strain-engineering to show outstanding uniformity and reproducibility for 200 mm GaN-on-Si epiwafers.
ALLOS applied its unique strain-engineering to show outstanding uniformity and reproducibility for 200 mm GaN-on-Si epiwafers.
X-FAB expands its SiC capacity and adds new in-house epitaxy capabilities
X-FAB expands its SiC capacity and adds new in-house epitaxy capabilities
Infineon Technologies expands its Schottky Diode portfolio by adding six devices in D2PAK real 2-pin package.
Infineon Technologies expands its Schottky Diode portfolio by adding six devices in D2PAK real 2-pin package.
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