This article discusses the advantages of Infineon's 5th generation of 1700V IGBT with .XT technology and emitter controlled diode for inverter…
This article discusses the advantages of Infineon's 5th generation of 1700V IGBT with .XT technology and emitter controlled diode for inverter…
This article highlights ROHM Semiconductor with Fraunhofer ISE 10kW three phase UPS inverter utilizing the SiC module…
This article highlights ROHM Semiconductor with Fraunhofer ISE 10kW three phase UPS inverter utilizing the SiC module solution to achieve high…
This article sheds light on the short-circuit and avalanche behavior of the standalone JFET, and how it is altered in the…
This article sheds light on the short-circuit and avalanche behavior of the standalone JFET, and how it is altered in the cascode implementation
This article introduces Fuji's 7th generation IGBT modules and their improvements in current and power density and power…
This article introduces Fuji's 7th generation IGBT modules and their improvements in current and power density and power cycling and thermal…
This article describes a high power IGBT module for electric and hybrid electric vehicle inverters and offers technical…
This article describes a high power IGBT module for electric and hybrid electric vehicle inverters and offers technical concepts and benefits.
This article discusses how SiC MOSFET-based inverters deliver a quantum improvement in power density, efficiency and…
This article discusses how SiC MOSFET-based inverters deliver a quantum improvement in power density, efficiency and improved performance.
This article highlights Raytheon UK’s Semiconductor Business Unit with high-temperature SiC (HiTSiC) technology for an…
This article highlights Raytheon UK’s Semiconductor Business Unit with high-temperature SiC (HiTSiC) technology for an advanced SiC manufacturing…
This article offers a highly integrated solution of improving inverter protection with the use of Toshiba's TLP5214 smart…
This article offers a highly integrated solution of improving inverter protection with the use of Toshiba's TLP5214 smart gate-driver.
This article Rohm’s SiC Diode and MOSFET portfolio has been introduced and several advantages have been shown from SiC…
This article Rohm’s SiC Diode and MOSFET portfolio has been introduced and several advantages have been shown from SiC MOSFETs and Diodes.
This article describes Mitsubishi Electric's new 800A/1200V full SiC module and its advantages over conventional IGBT…
This article describes Mitsubishi Electric's new 800A/1200V full SiC module and its advantages over conventional IGBT modules in power…
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