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High Efficiency DMOS FET Arrays cut Losses 40%

High Efficiency DMOS FET Arrays cut Losses 40%

97% Efficient 48V-to-12V POL with Monolithic GaN Half-Bridge

97% Efficient 48V-to-12V POL with Monolithic GaN Half-Bridge

GaN Systems and Vitec seal Pan-Asian Distribution Deal

GaN Systems and Vitec seal Pan-Asian Distribution Deal


News Apr 12, 2015 by Jeff Shepard
SiC Diodes SiC MOSFETs and Gate Driver IC

SiC Diodes SiC MOSFETs and Gate Driver IC

This article Rohm’s SiC Diode and MOSFET portfolio has been introduced and several advantages have been shown from SiC MOSFETs and Diodes.


New 800A1200V Full SiC Module

New 800A1200V Full SiC Module

This article describes Mitsubishi Electric's new 800A/1200V full SiC module and its advantages over conventional IGBT modules in power…


Torex Semiconductor celebrates Twentieth Anniversary

Torex Semiconductor celebrates Twentieth Anniversary


News Apr 05, 2015 by Jeff Shepard
Zolt set to Jolt Adapter makers with SiC-based 70W Design

Zolt set to Jolt Adapter makers with SiC-based 70W Design

Optimizing Control of Both the Synchronous Rectifier and Primary MOSFET in Flyback Power Supplies Improves Efficiency and Reliability

Optimizing Control of Both the Synchronous Rectifier and Primary MOSFET in Flyback Power Supplies Improves Efficiency and Reliability

This article offers methods overcoming the limitations of Schottky diode rectifier designs without the complexity of traditional synchronous…


Welcoming in a New Generation of Power Systems

Welcoming in a New Generation of Power Systems

As Spring arrives in the Northern Hemisphere, nature’s power of renewal and reinvention can be seen all around us and we humans look forward to…


Tyndall Collaboration secures €1m for Nano-GaN Project

Tyndall Collaboration secures €1m for Nano-GaN Project


News Apr 01, 2015 by Jeff Shepard
Power FET Gate Driver for Automotive Applications

Power FET Gate Driver for Automotive Applications

Performance Comparisons of SiC Transistors GaN Cascodes and Si  Coolmos in SMPS

Performance Comparisons of SiC Transistors GaN Cascodes and Si Coolmos in SMPS

This article compares the performances of SiC Transistors, GaN Cascodes and Si-Coolmos in Switch Mode Power Supplies through extensive tests.


Using Normally on JFETs in Power Systems

Using Normally on JFETs in Power Systems

This article highlights several circuit configurations that deliver performance improvements over their corresponding SiC enhancement devices.


600V GaN Transistor in TO-247

600V GaN Transistor in TO-247

Webbased Simulation Tool to Simplify IGBT Selection and Thermal Design in Minutes

Webbased Simulation Tool to Simplify IGBT Selection and Thermal Design in Minutes

This article introduces the features and benefits of the IGBT WebSim, a new web-based simulation feature in International Rectifier's website.


Enhancement-Mode and Cascode and GaN-on-Silicon Platforms

Enhancement-Mode and Cascode and GaN-on-Silicon Platforms

20-V Chipscale FET targets Ultraportables

20-V Chipscale FET targets Ultraportables

GaN Transistors rated for 600V handle up to 15A

GaN Transistors rated for 600V handle up to 15A

GaN enables 96.7% Efficient 500-Watt Eighth-Brick

GaN enables 96.7% Efficient 500-Watt Eighth-Brick


News Mar 16, 2015 by Jeff Shepard
GaN Power Switches with Topside Cooling Simplify PCB Design

GaN Power Switches with Topside Cooling Simplify PCB Design