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Starpower Europe Strengthens Sales Team in Germany

Starpower Europe Strengthens Sales Team in Germany

Starpower Europe continues to expand and assigns Rickmer Heubeck-Wex to the sales team supporting the German and Central European customer base


SiC Schottky Diodes AMP Plus Certified Products

SiC Schottky Diodes AMP Plus Certified Products

Global Power Technologies Group, Inc.  announces their SiC Schottky Diodes AMP Plus Certified Products


T-Series Power Modules with 7th Generation IGBT and NX-Type Package

T-Series Power Modules with 7th Generation IGBT and NX-Type Package

Mitsubishi Electric Corporation announced the introduction and commercialization of its T-Series power semiconductor modules


High-Voltage Batteries with First 100V High-Side FET Driver

High-Voltage Batteries with First 100V High-Side FET Driver

Texas Instruments introduced the first single-chip 100-V high-side FET driver for high-power lithium-ion battery applications, delivering advanced…


20 MHz Bandwidth Envelope Tracking Power Supply Using eGaN® FETs

20 MHz Bandwidth Envelope Tracking Power Supply Using eGaN® FETs

This article highlights Efficient Power Conversion ET power supply using EPC8004 high frequency eGaN FETs for 4G LTE wireless base station…


Isolated Drivers for GaN and SiC claim Highest Noise Immunity

Isolated Drivers for GaN and SiC claim Highest Noise Immunity

GaN Systems Signs Distribution Agreement with Eastronics

GaN Systems Signs Distribution Agreement with Eastronics


News Feb 16, 2016 by Jeff Shepard
BASiC 3C Raising Series A Funding for SiC Development

BASiC 3C Raising Series A Funding for SiC Development


News Feb 16, 2016 by Jeff Shepard
Veeco Collaborates with imec on GaN-Based Power Devices

Veeco Collaborates with imec on GaN-Based Power Devices


News Feb 16, 2016 by Jeff Shepard
100W / 92% Efficient GaN Dev Board for 6.78MHz Wireless Power

100W / 92% Efficient GaN Dev Board for 6.78MHz Wireless Power

650V / 5A SiC Schottky Barrier Diodes

650V / 5A SiC Schottky Barrier Diodes

4th Generation Field Stop IGBT with Enhanced Latch up Immunity

4th Generation Field Stop IGBT with Enhanced Latch up Immunity

This article highlights Fairchild Semiconductor 4th generation Field Stop (FS) IGBT that offers superior device performance under static and…


6500 V X-Series High Voltage IGBT Modules

6500 V X-Series High Voltage IGBT Modules

This article introduces Mitsubishi Electric's 6500V X-Series High Voltage IGBT module for power modules operating at 150ºC junction temperature.


Semitrex Opens Two New Semiconductor Design Centers

Semitrex Opens Two New Semiconductor Design Centers


News Feb 09, 2016 by Jeff Shepard
UK’s EPSRC and GaN Systems launch Future Power Challenge

UK’s EPSRC and GaN Systems launch Future Power Challenge


News Feb 09, 2016 by Jeff Shepard
ON Semiconductor aims to Out Grow the Industry in 2016

ON Semiconductor aims to Out Grow the Industry in 2016


News Feb 08, 2016 by Jeff Shepard
GaN enables 2.6 kW/l / >97% Efficient Level 2 EV Charger

GaN enables 2.6 kW/l / >97% Efficient Level 2 EV Charger


News Feb 08, 2016 by Jeff Shepard
Enhancing the performance of traditional IGBT-module-based power assemblies with SiC modules

Enhancing the performance of traditional IGBT-module-based power assemblies with SiC modules

This article discusses how Silicon Carbide MOSFETs enable high frequency in high power conversion systems for enhanced performance of power…


Transfer Mold IPM Family “SLIMDIP” with 5A/15A 600V RC (Reverse Conducting) IGBT in a Compact Package

Transfer Mold IPM Family “SLIMDIP” with 5A/15A 600V RC (Reverse Conducting) IGBT in a Compact Package

This article highlights Mitsubishi Electric Dual-In-line Package (DIP) Intelligent Power Module SLIMDIP with ratings of 5A and 15A/600V in a…


GaN FET Optimized for Pulsed Applications such as LIDAR

GaN FET Optimized for Pulsed Applications such as LIDAR