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Microwave Heating System with GaN-Amplifier-Modules

Microwave Heating System with GaN-Amplifier-Modules


News Jan 25, 2016 by Jeff Shepard
Torex Semiconductor to Open Kansai Technology Center

Torex Semiconductor to Open Kansai Technology Center


News Jan 24, 2016 by Jeff Shepard
Educational Videos on GaN Devices for Power Conversion

Educational Videos on GaN Devices for Power Conversion


News Jan 24, 2016 by Jeff Shepard
Programmable Six-Channel Low-Side MOSFET Pre-Driver

Programmable Six-Channel Low-Side MOSFET Pre-Driver

BTRAN  BiDirectional BiPolar Junction Transistor

BTRAN BiDirectional BiPolar Junction Transistor

This article discusses the functions and applications of Bi-directional Bipolar Junction Transistor (B-TRAN), a new topology for power semiconductors.


100V MOSFET H-bridge in 5mm x 4.5mm Package

100V MOSFET H-bridge in 5mm x 4.5mm Package

IGBT Modules Increase Efficiency in TIG Welding Machines

IGBT Modules Increase Efficiency in TIG Welding Machines

GaN gets EPC CEO Alex Lidow 2015 SEMI Award

GaN gets EPC CEO Alex Lidow 2015 SEMI Award


News Jan 13, 2016 by Jeff Shepard
SunEdison to distribute EpiGaN’s GaN-on-Si epi wafers

SunEdison to distribute EpiGaN’s GaN-on-Si epi wafers


News Jan 12, 2016 by Jeff Shepard
£50m for UK Compound Semiconductor Catapult

£50m for UK Compound Semiconductor Catapult


News Jan 10, 2016 by Jeff Shepard
GaN-on-Si Technology Wins Innovation Award

GaN-on-Si Technology Wins Innovation Award


News Jan 10, 2016 by Jeff Shepard
Torex to Open Power IC R&D Center in Silicon Valley

Torex to Open Power IC R&D Center in Silicon Valley


News Jan 04, 2016 by Jeff Shepard
Expanding Applications for SiC in 2015

Expanding Applications for SiC in 2015

Expands Lineup of J1-Series High-power Semiconductor Modules

Expands Lineup of J1-Series High-power Semiconductor Modules

Mitsubishi Electric Corporation announced the J1-Series high-power semiconductor modules featuring compact 6-in-1 packages mainly for use in…


Six for SiC – or is it too soon?

Six for SiC – or is it too soon?

This article discusses the best time to switch from 4 to 6-inch wafers for the fabrication of Silicon Carbide (SiC) power semiconductor devices.


Wireless Charging: Power without Boundaries Becomes Available to the Masses

Wireless Charging: Power without Boundaries Becomes Available to the Masses

Wireless charging has been in the wilderness, hidden in a chasm until standardisation, strategic partnerships and technology integration recently…


Temperature Limits for Power Modules Part-1: Maximum Junction Temperature

Temperature Limits for Power Modules Part-1: Maximum Junction Temperature

This article features Infineon temperature limits for power module by understanding the effect of changing operating conditions and application…


Building Blocks for GaN Power Switches

Building Blocks for GaN Power Switches


News Dec 30, 2015 by Jeff Shepard
Littelfuse Invests in Silicon-Carbide Start-up

Littelfuse Invests in Silicon-Carbide Start-up


News Dec 17, 2015 by Jeff Shepard
Give the Gift of GaN - PowerPulse Exclusive

Give the Gift of GaN - PowerPulse Exclusive